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RF & Protection Devices Data Sheet Revision 2.0, 2014-08-26 Preliminary BFQ790 High Linearity High Gain 1/2 Watt RF Driver Amplifier

81726 Munich, Germany

© 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Preliminary Data Sheet 3 Revision 2.0, 2014-08-26 Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CI POS™, CIPURSE™, EconoPAC K™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAV E™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, Pr imePACK™, PrimeSTACK™, PR O-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SI EGET™, SINDRION™, SIPMOS™, SmartL EWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Te chnologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVC o, LLC (Visa Holdings In c.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corp oration. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrot echnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Allianc e, Inc. MIPS™ of MIPS Technologies, Inc., U SA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Si rius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRO NIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RI VER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 BFQ790, High Linearity High Gain 1/2 Watt RF Driver Amplifier Revision History: 2014-08-26, Revision 2.0 Page Subjects (major cha nges since last revision) Preliminary datasheet based on measurements of engineering samples, replaces target datasheet.

Preliminary Data Sheet 4 Revision 2.0, 2014-08-26 Table of Contents

Preliminary Data Sheet 6 Revision 2.0, 2014-08-26 List of Tables

Preliminary Data Sheet 7 Revision 2.0, 2014-08-26

1 Product Brief

The BFQ790 is a single stage high linearity high gain dr iver amplifier. The device is not internally matched and hence provides flexibility to be used for any application where high linearity is key. There are several application notes available, most of them for LTE frequencies, a summary can be found in chapter 6. The device is based on Infineon's reliable and cost effectiv e NPN silicon germanium technology running in very high volume. The technology comprises lowohmic substrate contacts so that emitter bond wires can be omitted. Thereby the emitter inductance is minimized and the powe r gain optimized. For example one of the circuits prov ides an OIP3 of 41 dBm at 2650 MHz, with a power gain of 14 dB. The datasheet describes the device mainly at 250 mA collector current IC, operated in Class A mode. Under these conditions the BFQ790 provides ½ Watt RF power and highes t linearity. If energy effici ency is in the focus it is recommended to operate the device in class AB mode. Th at means to adjust a quiescent current ICq lower than 250 mA and use the self biasing effect to get high linearity and efficiency when the input RF power is high. Please refer to figure 7-19, where as an example an ICq of 155 mA is adjusted. OIP3 vs. IC is shown in figure 7-22. For the BFQ790 an advanced large signal compact model is available. Further information please find in chapter 8. The BFQ790 is very rugged. A special collector design prevents from thermal runaway respectively 2nd breakdown. This leads to a high ruggedness against mism atch at the output. The co llector design allows safe operation with a single 5 V supply. The special design of the emitter-base diode makes the input robust and yields a high maximum RF input power. The chip is housed in a halogen free industry standard package SOT89. The high thermal conductivity of the silicon substrate and the low thermal resistance of the package add up to a ther mal resistance of only 35 K/W, what leads to moderate junction temperatures even at high dissipated DC power values. Recommended operating conditions can be found in chapter 4. The proper die attach with good thermal contact is tested 100%, so that there is a minimum variation of thermal properties. The devices are 100% DC and RF tested.

Features

Preliminary Data Sheet 8 Revision 2.0, 2014-08-26

2 Features

Applications

  • High linearity driver or pre-driver in the transmit chain
  • 2nd or 3rd stage LNA in the receive chain
  • IF or LO buffer amplifier In
  • Commercial / industrial wireless infrastructure / basestations
  • Repeaters
  • Automated test equipment For
  • Cellular, PCS, DCS, UMTS, LTE, CDMA, WCDMA, GSM, GPRS
  • WLAN, WiMAX, WLL and MMDS
  • ISM, AMR
  • UHF television, CATV, DBS Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
  • High 3rd order intercept point OIP3 of 41 dBm @ 5 V, 250 mA in 1850 MHz and 2650 MHz Class A application circuits
  • High compression point OP1dB of 27 dBm @ 5 V, 250 mA corresponding to 40% collector efficiency
  • High power gain of 17 dB @ 5V, 250 mA in 1850 MHz Class A application circuit
  • Low minimum noise figure of 2.6 dB @ 1800 MHz, 5 V, 70 mA
  • Single stage, intended for external matching
  • Exceptional ruggedness up to VSWR 10:1 at output
  • High maximum RF input power PRFinmax of 18 dBm
  • Safe operation with single 5 V supply
  • 100% test of proper die attach for reproducible thermal contact
  • 100% DC and RF tested
  • Easy to use large signal compact (VBIC) model available
  • Cost effective NPN SiGe technology running in very high volume
  • Easy to use Pb-free (RoHS complia nt) and halogen-free industry standard package SOT89, low RTHJS of 35 K/W Product Name Package Pin Configuration Marking BFQ790 SOT89 1 = B 2 = E 3 = C R3

Preliminary Data Sheet 9 Revision 2.0, 2014-08-26

3 Absolute Maximum Ratings

Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Table 3-1 Absolute Maximum Ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Unit Note / Test Condition Min. Max. Collector emitter voltage VCE 6.1 5.1 V TA = 25 °C TA = -40 °C Collector base voltage VCB 18 V Instantaneous total base emitter reverse voltage vBE -2.0 V DC + RF swing Instantaneous total collector current iC – 600 mA DC + RF swing DC collector current IC –3 0 0 m A DC base current IB –1 0 m A RF input power PRFin – 18 dBm In- and output matched Mismatch at output VSWR – 10:1 In compression, over all phase angles ESD stress pulse VESD -500 500 V HBM, all pins, acc. to ANSI / ESDA / JEDEC JS-001-2012 Dissipated power Pdiss –1 5 0 0 m W TS ≤ 97.5 °C1), regard derating curve in figure 5-1 1) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb. Junction temperature TJ –1 5 0 ° C Operating case temperature TA -40 105 2) 2) At the same time regard TJ,max. Storage temperature TStg -55 150 °C

Recommended Operating Conditions Preliminary Data Sheet 10 Revision 2.0, 2014-08-26

4 Recommended Operating Conditions

This following table shows examples of recommended oper ating conditions. As long as maximum ratings are regarded operation outside these conditions is permitted, but increases failure rate and reduces lifetime. For further information refer to the quality report available on the BFQ790 internet page. Table 4-1 Recommended Operating Conditions Operating Mode Ambient Tempera- ture 1) Is the operating case temperatur e respectively of the heat sink. Collector Current DC Power2) 2) PDC = VCE * IC with VCE = 5V. RF Output Power 3) 3) RF power delivered to the load, PRFout = η * PDC. Efficiency 4) Efficiency of the conversion from DC power to RF power, η = PRFout / PDC (collector efficiency). Dissipated Power5) 5) Pdiss = PDC - PRFout. The RF output power PRFout delivered to the load reduces the power Pdiss to be dissipated by the device. This means a good output match is recommended. Thermal Resistance of pcb 6) RTHSA is the thermal resistance of the pcb including heat sink, that is between the soldering point S and the ambient A. Regard the impact of RTHSA on the junction temperature TJ, see below. The thermal design of the pcb, respectively RTHSA, has to be adjusted to the intended operating mode. Junction Tempera- ture 7) TJ = TA + Pdiss * RTHJA. RTHJA = RTHJS + RTHSA. RTHJA is the thermal resistance between the transistor junction J and the ambient A. RTHJS is the combined thermal resistance of die and package, which is 35 K/W for the BFQ790, see chapter 5. TA [°C] IC [mA] PDC [mW] PRFout [mW] (dBm) η [%] Pdiss [mW] RTHSA [K/W] TJ [°C] Compression 55 250 1250 500 (27) 40 750 35 110 Final stage 55 200 1000 250 (24) 25 750 35 110 High TA 85 120 600 50 (17) 8.5 550 10 110 Maximum TA 105 50 250 100 (20) 40 150 10 110 Linear 55 150 750 50 (17) 7 700 35 110 Very Linear 55 250 1250 50 (17) 4 1200 10 110

Preliminary Data Sheet 11 Revision 2.0, 2014-08-26

5 Thermal Characteristics

Figure 5-1 Absolute Maximum Power Dissipation Pdiss,max vs. Ts Note: In the horizontal part of the derating curve the maximum power dissipation is given by Pdiss,max=VCE,max*IC,max. In this part the junction temperature TJ is lower than TJ,max. In the declining slope it is TJ=TJ,max, Pdiss,max has to be reduced according to the curve in order not to exceed TJ,max. It is TJ,max=TS+Pdiss,max*RTHJS. Table 5-1 Thermal Resistance Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Junction - soldering point RTHJS –3 5 –K / W – 0 20 40 60 80 100 120 140 160 200 400 600 800 1000 1200 1400 1600 TS [°C] Pdiss,max [mW]

Electrical Performance in Application Preliminary Data Sheet 12 Revision 2.0, 2014-08-26

6 Electrical Performance in Application

The table shows the most important results of the applic ation notes available for the BFQ790. In all cases the matching is better 10 dB, the isolation ~20 dB, the stability factor > 1 and VCC = 5V. Fore more detailed informations please refer to the BFQ790 internet page. Application notes for Class AB operating mode respectively lower quiescent currents ICq are in development. Table 6-1 Application Notes Application Note Frequency OP1dB OIP3 Gain Operating Mode ICq # [MHz] [dBm] [dBm] [dB] [mA] AN385 2620 - 2690 27 41 14 Class A 220 AN386 1805 - 1880 27 41 17 Class A 230

Electrical Performance in Test Fixture Preliminary Data Sheet 13 Revision 2.0, 2014-08-26

7 Electrical Performan ce in Test Fixture

7.1 DC Parameter Table

Table 7-1 DC Characteristics at TA = 25 °C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Collector emitter breakdown voltage V(BR)CEO 6.1 6.7 – V IC = 1 mA, open base Collector emitter leakage current ICES –1 0.1 401) 1) Upper spec value limited by th e cycle time of the 100% test. nA µA VCE =8 V , VBE =0 VCE =1 8 V , VBE =0 E-B short circuited Collector base leakage current ICBO –1 4 0 1) nA VCB =8 V , IE =0 Open emitter Emitter base leakage current IEBO –1 4 0 1) nA VEB = 0.5 V, IC =0 Open collector DC current gain hFE 60 120 180 VCE =5V , IC = 250 mA Pulse measured2) 2) Pulse width is 1 ms, duty cycle 10% . Regard that the current gain hFE depends on the junction temperature TJ and TJ amongst others from the thermal resistance RTHSA of the pcb, see notes to table 4-1. Hence the hFE specified in this datasheet must not be the same as in the application. It is highly recommended to apply circuit design techniques to make the collector current IC independent on the hFE production variation and temperature effects.

Electrical Performance in Test Fixture Preliminary Data Sheet 14 Revision 2.0, 2014-08-26

7.2 AC Parameter Tables

Measurement setup for the AC characteristics shown in tables 7-3 to 7-6 is a test fixture with Bias T’s and tuners to adjust the source and load impedances in a 50 Ω system, TA = 25 °C. Figure 7-1 BFQ790 Testing Circuit Table 7-2 General AC Characteristics at TA =2 5° C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Transition frequency fT –2 0 –G H z VCE =5V , IC = 250 mA, f = 0.5 GHz Collector base capacitance CCB –1 . 1 –p F VCB =5V , VBE =0 f =1M H z Emitter grounded Collector emitter capacitance CCE –2 . 2 –p F VCE =5V , VBE =0 f =1M H z Base grounded Emitter base capacitance CEB –9 . 4 –p F VEB =0 . 5V , VCB =0 f =1M H z Collector grounded

Electrical Performance in Test Fixture Preliminary Data Sheet 15 Revision 2.0, 2014-08-26 Table 7-3 AC Characteristics, VCE = 5 V, f = 0.9 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain dB Maximum power gain Gma –2 3 – IC = 250 mA Transducer gain | S21|2 –1 3 – IC = 250 mA Minimum Noise Figure dB ZS = ZSopt Minimum noise figure NFmin –2 . 5 – IC =7 0m A Linearity dBm ZL = ZLopt 1 dB compression point at output OP1dB –2 7 – IC = 250 mA 3rd order intercept point at output OIP3 –3 8 . 5 – IC = 250 mA Table 7-4 AC Characteristics, VCE = 5 V, f = 1.8 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain dB Maximum power gain Gma –1 8 . 5 – IC = 250 mA Transducer gain | S21|2 –7 . 5 – IC = 250 mA Minimum Noise Figure dB ZS = ZSopt Minimum noise figure NFmin –2 . 6 – IC =7 0m A Linearity dBm ZL = ZLopt 1 dB compression point at output OP1dB –2 7 – IC = 250 mA 3rd order intercept point at output OIP3– 3 8 . 5 – IC = 250 mA Table 7-5 AC Characteristics, VCE = 5 V, f = 2.6 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain dB Maximum power gain Gma –1 6 – IC = 250 mA Transducer gain | S21|2 –5 . 5 – IC = 250 mA Minimum Noise Figure dB ZS = ZSopt Minimum noise figure NFmin –3 . 0 – IC =7 0m A Linearity dBm ZL = ZLopt 1 dB compression point at output OP1dB –2 7 – IC = 250 mA 3rd order intercept point at output OIP3– 3 8 . 5 – IC = 250 mA

Electrical Performance in Test Fixture Preliminary Data Sheet 16 Revision 2.0, 2014-08-26 Table 7-6 AC Characteristics, VCE = 5 V, f = 3.5 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Power gain dB Maximum power gain Gma –1 3 – IC = 250 mA Transducer gain | S21|2 –3– IC = 250 mA Minimum Noise Figure dB ZS = ZSopt Minimum noise figure NFmin –3 . 4 – IC =7 0m A Linearity dBm ZL = ZLopt 1 dB compression point at output OP1dB –2 7 – IC = 250 mA 3rd order intercept point at output OIP3– 3 8 . 5 – IC = 250 mA

Electrical Performance in Test Fixture Preliminary Data Sheet 17 Revision 2.0, 2014-08-26

7.3 Characteristic DC Diagrams

Figure 7-2 Collector Current IC vs. VCE, IB = Parameter Note: Regard absolute maximum ratings for IC, VCE and Pdiss Figure 7-3 DC Current Gain hFE vs. IC at VCE = 5 V 0 1 2 3 4 5 6 7 100 150 200 250 300 350 400 450 500 VCE [V] IC [mA] 0mA 0.75mA 1.5mA 2.25mA 3mA 3.75mA 4.5mA 5.25mA 6mA 310 Ic [mA] hFE

Electrical Performance in Test Fixture Preliminary Data Sheet 18 Revision 2.0, 2014-08-26 Figure 7-4 Collector Emitter Breakdown Voltage BVCER vs. Resistor R_B/GND Note: The above figure shows the collector-emitter breakdown voltage BVCER with a resistor R_B/GND between base and emitter. Only for very high R_B/GND values ("open base") the breakdown voltage is as low as BVCEO (here 6.7 V). With decreasing R_B/GND values BVCER increases, e.g. at R_B/GND=10 kOhm to BVCER=10 V. In the application the biasing base resistance together with block capacitors take over the function of R_B/GND and allows the RF voltage amplitude to swing up to voltages much higher than BVCEO, no clipping occurs. Due to this effect the transistor can be biased at VCE=5 V and still high RF output powers achieved, see the OP1dB values reported in chapter 7.2. RBE[Ohm] VCER[V]

Electrical Performance in Test Fixture Preliminary Data Sheet 19 Revision 2.0, 2014-08-26

7.4 Characteristic AC Diagrams

Figure 7-5 Transition Frequency fT vs. IC, VCE = Parameter Figure 7-6 Collector Base Capacitance CCB vs. IC at f = 30 MHz, VCB = Parameter 0 100 200 300 400 500 600 IC [mA] fT [GHz] 0.50V 1.00V 2.00V 3.00V 4.00V 5.00V 0 100 200 300 400 500 600 1.4 1.8 2.2 2.6 IC [mA] CCB [pF] 5.00V 4.00V 3.00V 2.00V 1.00V

Preliminary Data Sheet 28 Revision 2.0, 2014-08-26

8 Simulation Data

For the BFQ790 a large signal model exists. It is a VBIC model, which is an advancement of the SPICE Gummel- Poon model. It covers properties of a power transistor which are not known by the standard SPICE Gummel-Poon model, such as self-heating, quasi-saturation and volt age breakdown. The VBIC model can be used in standard simulation tools such as ADS and MWO as easily as the SPICE Gummel-Poon model. On the BFQ790 internet page the VBIC model is provided as a netlist. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. Besides th e DC characteristics all S-parameters in magnitude and phase, noise figure (including optimum source impedance and equivalent noise resistance), intermodulation and compression have been extracted. On the BFQ790 internet page you also find the S-parameters (including noise parameters) for linear simulation. In any case please consult our website and download the latest versions before actually starting your design.

Preliminary Data Sheet 29 Revision 2.0, 2014-08-26

9 Package Information SOT89

Figure 9-1 Package Outline Figure 9-2 Package Footprint Figure 9-3 Marking Example (Marking BFQ790: R3) Figure 9-4 Tape Dimensions SOT89-PO V02 0.45 +0.2 1) Ejector pin markings possible 1.5 3 0.2 -0.1 B 0.25 ±0.05 45˚ 0.15 2.5±0.1 4±0.25 M B B 0.15 ±0.10.35 ±0.21 1.5 ±0.1 ±0.21.6 -0.15 +0.12.75 ±0.14.5 ±0.11 0.2 MAX.1) 123 0.8 0.8 2.0 1.01.2 2.5 0.7 SOT89-FP V02 SOT89-TP V02 4.3 1.6 4.6 Pin 1

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