BFQ69 SIEMENS | Alldatasheet
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Technical content
NPN Silicon RF Transistor BFQ 69 @ For low-noise broadband amplifiers in antenna and telecommunications systems at collector 3 currents from 1 mA to 25 mA. 1 2 verosio ESD: Electrostatic discharge sensitive device, observe handling precautions! Type [Mersna | Ordering Code Pin Configuration | Package”) 1 2 3 BFQ 69 BFQ69 —_| Q62702-F780 | & | c | 8B |Tplast Maximum Ratings Parameter [Symbot [Valves [Uni Collector base vtage [ven fas Emir base votage a Collector current ic 30 ma Base cent le ie Total power dissipation, Ts < 102 °C [Pa ss [300,-——ss | mw Janet temperature © Ambient temporatine Tange Storage temperature range -65... + 150 Thermal Resistance Suneton ambient) [Ren [e200 KW 1) For detailed dimensions see chapter Package Outlines. 2) Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. 3) Ts is measured on the collector lead at the soldering point to the pob.
Electrical Characteristics
at Ta = 25 'C, unless otherwise specified. Parameter |e et Unit DC Characteristics Collector-emitter breakdown voltage Vieryceo Vv Ic=1mMA,Is=0 Collector-emitter cutoff current Ices nA Vor = 25 V, Ver =0 Collector-base cutoff current Ice nA Ves = 10 V, Je =0 Emitter-base cutoff current eso pA Veo = 2V,ic=0 DC current gain - Ic =15 MA, Vee = 10V AC Characteristics Transition frequency fr GHz Ic= 15 MA, Ve = 10 V, f= 200 MHz Collector-base capacitance Cop pF Vea = 10 V, Vee = ve = 0, f= 1 MHz Collector-emitter capacitance Cow Vee = 10 V, Vee = vee = 0, f= 1 MHz Output capacitance Cobs Vee = 10 V, Vee = voo = 0, f= 1 MHZ Noise figure F dB Ic=3mA, Vee=10V, f= 10 MHz, Zs =75Q Ic =5 MA, Vee = 10 V, f= 800 MHz, Zs = 502 Power gain Goe 16.5 Ic = 10 MA, Vce = 10 V, f = 800 MHz, Zs = 50 Q, Zt = Zope Linear output voltage Vor = Vee 170 mV two-tone intermodulation test Ic = 25 MA, Vee = 10 V, dm = 60 cB, ‘fi = 806 MHz, fe = 810 MHz, Zs = Zi = 50Q Third order intercept point IPs 27.5 dBm Ic = 25 mA, Vee = 10 V, f = 800 MHz
Total power dissipation Pit =f (Ts*; Ts) Transition frequency fr =f (Ic) *Package mounted on alumina f= 200 MHz ne _ ope a) oe. PSULMIUH) 4 Sars 300 si tt | EARN TPN FEN BIESS \\ \\ HH, EE \\ TH i LTT (COE 0 50 100 Cc 150 0 10 20 mA 30 — Til el Collector-base capacitance Ce =f (Vcs) Noise figure F =f (Ic) Vee = veo = 0, f= 1 MHz Vee = 10 V, f= 10 MHz HHH PCE sop eee CERES N nae Ae isoa JACEE, «= TEES > oA ; HET NSA pe HEH 9% 10 v 20 alii rrr ty he ele