BFQ60 SIEMENS | Alldatasheet
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al rs - Be . + 25C D MM 8235605 0004643 T MESIEG Low Noise NPN Silicon Microwave Transistor BFO 60 up to 2 GHz 250 94643 ~~ D7 Bj QZ an SIEMENS AKTIENGESELLSCHAF BFO. 60 is a bipolar silicon NPN microwave transistor in hermetically sealed metal : ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing processes : such as ion implantation technique, titanium-platinum-gold metallization as well as a glass. | passivated chip surface ensure very high reliability. The transistor is particularly intended \\ for use in low-noise broadband linear amplifiers. It is marked on its package with the } short designation “60”. j Type Mark Ordering code owe ll q i BFQ.60 60 as2702-Fe55 = A} LL == y 2 : Base Collector ° i Enutter ie j “hot on i ne a i Approx. weight 0.0 9 Dimensions in mm | Maximum ratings Collector-emitter voltage Veeo 20 v Collector-emitter voltage (Rag = 0) Vees 27 v Collector-base voltage Veao 27 v Emitter-base voltage Veo | 1.8 v Collector current Ic 36 mA Storage temperature range Tstg -65 to +175 °C Junction temperature Tj 200 °c : Total power dissipation {Tamb < 25°C) Prot 700 mw Thermal resistance : Junotion to ambient air Rina ‘| $250 1 Kw i {when mounted on ceramic ~ or glass-fiber substrate 40 x 25 x 1.5 mm) | i : = 689 - 2024 €-03 ares ce wee
. @5C D MM 8235605 OOO4b44 1 MMSIEG . } o> 28004644 0-7+3/~ 23 BFQ 60 ~ SIEMENS AKTIENGESELLSCHAF | Static characteristics (Tam = 25 C) | Collector-emitter breakdown voltage Vieryces 27 v ; (Uc = 100 WA) ° Collector cutoff current Ieso 100 nA H . (Veao = 15 V) : DC current gain ’ (og = 15 V; fc = 15 mA) bee 100 - { Dynamic characteristics (Tam = 26 C) : Transition frequency i (Vog = 10 V; Ig = 25 mA) f 4 GHz : Noise figure : (eg = 10 V; Ic = 3 mA; f = 10 MHz) NF 0.9 4B : (Vee = 10 V; Ic = 8 mA; f = 2 GHz) NF 34 4B ‘ Reverse transfer capacitance Ci20 0.6 pF : (ee = 10 V: Ic = 1 mA; f = 1 MHz) i Power gain t (Woe = 10 V; Ic = 15 mA; f = 2 GHz) Gre opt " 48 F j : 3 690 2025 €-04 .
25C D MM 6235605 OOO4b4S 3 MMSIEG © | 25C 04645 0-73-25 BFQ 60 { i SIEMENS AKTIENGESELLSCHAF_ —— | S parameter H Operating point: Vog = 6 V, Ig = 3 mA, Z, = 502 i t Si 9 Sar 9 Si2 i S22 ° Gmox 1 (GHz) (dB) ; 0,1 |0,836 }- 32 |677 |156 |0030 j69 0995 |-11 |41,7 i 02 |o819 |- 60 |626 |140 |o052 |65 |0872 |-19 |269 i 0,3 |0759 |- 84 |664 |126 |0067 |44 |0747 |-27 | 221 i 0,4 0,739 |-103 | 4,85 116 0,074 | 36 0,686 | -36 19,9 j 0,6 0,702 | -132 3,77 99 0,083 | 27 0,605 |-34 | 164 e 08 |0671 |-153 |304 | 84 |0,086 |20 |0595 |-37 | 14,2 i 09 |0659 |-163 |276 | 78 |0,086 |18 |0817 |-43 |127 : 14 |0,715 | 170 |1,85 | 55 |0087 |15 |os616 |-57 | 98 : 1,5 |0,661 | 167 |1,74 | 51 |0084 |15 |o,s02 |-54 | 86 i 116 |0682 | 163 |165 | 48 |o085 |17 |os09 |-62 | 34 i 1,7 0,656 158 1,55 44 0,086 | 18 0,511 | -60 7.6 18 {0,690 | 164 |147 | 40 |o0087 |19 0609 |-67 | 7.5 i 19 |0686 | 151 |1.41 | 37 |0088 |20 0,00 |-665 | 7,0 : 2 |0678 | 147 |135 | 33 |o089 |22 |o4e2 |-73 | 65 Operating point: Voge = 6 V, Ig = 10 mA, Z = 50.9 0,2 0,643 | -106 14,78 | 121 0,034 | 44 0619 |-36 | 27,8 - 03 |0618 |-131 |1123 |107 |0,039 |38 |0467 |-41 | 24,2 . 04 |0616 |-147 | 890 | 98 |0,042 |39 |0422 |-60 |21,9 06 |0620 |-165 | 616 | 87 |0,048 |39 [0,346 |-40 | 185 07 |0607 |-173 | 536 | 81 |0082 |40 |o361 |-47 | 17,2 08 0,604 | -179 4,73 76 0,055 | 41 0,343 | -38 16,0 0,9 0,616 173 4,20 71 0,058 | 41 0,276 |-48 14,9 1 0,621 | 172 | 381 | 67 |0062 |41 |o0,363 |-51 | 14.3 11 |0611 | 163 | 349 | 63 |o0oes |42 |0,298 |-43 | 13,3 12 |0646 | 163 | 3.21 | 60 |0070 |43 |0,286 |-58 | 12,9 1,3 |0610 | 157 | 295 | 57 |0073 |42 0296 |-54 |11,8 14 |0671 | 187 | 2.74 | 83 |0076 |42 |0,297 |-60 | 11,8 15 0,616 163 2,55 50 0,081 |43 0,288 |-54 | 10,6 1.6 |0636 | 161 | 242 | 47 |0085 |44 0291 |-66 | 10,3 1.7 |o616 | 146 | 227 | 44 |0089 |44 0,296 |-60 | 96 : 18 0,655 | 144 | 215 | 41 |0094 44 0,293 |-69 | 96 2 foe42 | 138 | 1.96 | 35 |0104 }43 [0,282 |-76 | 85 ae seemed
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re - . ~ =F eS Tee ~ ~ a 25C D MM 8235605 OOOUb4E 5 MMSIEG . __25C 04646" O77 -5/~23 — BFAGO i al Hs ; i - SIEMENS AKTIENGESELLSCHAF-——— i S parameter : Operating point: Veg = 6 V, Ig = 20 mA, Zp = 50.2 t Si ° Sar 9 Siz 9 Soo 9 | Gmax : (GHz) (8) : 0,1 0,568 |- 91 27,40 | 133 0,018 |53 0,735 |-32 | 33,8 : 0,2 0,597 | -134 18,41 111 0,024 |44 0481 |-40 | 284 0,3 0,595 |-153 | 13,11 99 0,028 |45 0,349 |-43 | 24,8 . 04 0,697 |-163 | 10,06 92 0,032 |47 0,323 |-53 | 22,4 H 0,5 0,601 |-172 8,14 87 0,036 | 49 0,349 |-42 | 20,7 ‘ 0,6 0,610 |-176 6,75 82 0,041 | 51 0,265 |-38 | 18,9 ‘ 0,7 0,598 177 5,86 77 0,046 |52 0,284 |-46 | 17,7 08 0,596 172 5,16 73 0,050 | 52 0,273 |-35 | 16,5 0,9 0,612 166 4,56 69 0,054 | 52 0,208 |-47 | 154 1 0,617 165 4,16 65 0,059 | 52 0,287 | -51 14,8 11 0,610 157 3,80 62 0,064 | 52 0,238 |-39 | 13,9 1,2 0,640 158 3,41 59 0,069 | 52 0,224 |}-57 | 13,4 1,3 0,608 152 3,19 55 0,073 | 51 0,235 |-52 | 12,3 14 0,668 153 2,95 52 0,077 |51 0,238 |-59 | 12,2 1,5 0,614 149 2,76 49 0,082 |52 0,229 |-51 11,1 . 1,6 0,633 147 2,61 47 0,087 | 51 0,233 |-65 | 10,8 1,7 0,614 143 2,46 43 0,092 | 51 0,238 |-58 | 10,1 18 0,650 141 2,32 40 0,097 |49 0,237 |-68 | 10,0 : 19 0,643 138 2,22 37 0,103 | 48 0,231 |-61 95 . 2 0,647 135 212 35 0,109 | 48 0,225 |-76 9,1 ' i i j i 692 55S :
2027 E~06 2 wood
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4820 Zasee Vee 1OVi1 = 2G
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