BFQ591 NJSEMI | Alldatasheet
Document overview
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Technical content
<3£.ml-(-on.au.ckoi U-^i , Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN RF Transistor BFQ591
DESCRIPTION
- High Power Gain
- High Current Gain Bandwidth Product
- Low Noise Figure
APPLICATIONS
- Designed for use in MATV or CATV amplifiers and RF communications subscribers equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO Vceo VEBO Ic PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @TC=25°C Junction Temperature Storage Temperature Range VALUE 200 2.25 175 -65-150 UNIT V V V mA W SOT-89 package 1: Base 2: Emitter 3: Collector L= CJ DIM A b C D E e el L mm MIN i. ;o 0. 32 0.36 0,35 i. ;o i. ;o :. so 3.9: MAX 1.60 0,52 0,56 0. 11 ;. is 1.80 2,60 ;, 2c L cOtyp 2.90 0.90 3. :o 1. 10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified SYMBOL V(BR)C£S V(BR)CBO V(BR)EBO ICBO hFE fT PG PG Cre I S21e I 2 Vo PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current DC Current Gain Current-Gain — Bandwidth Product Power Gain Power Gain Feedback Capacitance Insertion Power Gain Output Voltage CONDITIONS lc=0.1mA;lB=0 lc= 0.1mA; IE= 0 lE=0.1mA;lc=0 VCB=10V; IE=0 lc= 70mA ; VCE= 8V lc= 70mA ; VCE= 12V; f= 1GHz lc= 70mA;VCE= 12V; f= 900MHz lc= 70mA;VCE= 12V; f= 2GHz lE=0;VCB=12V;f=1MHz lc= 70mA ; VCE= 12V; f= 1GHz note MIN TYP. 5.5 0.8 700 MAX 0.1 250 UNIT V V V uA GHz dB dB PF dB mV Note; dim = 60 dB (DIN45004B); VP = Vo; Vq = Vo -6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz; measured @ f(p+q+r) = 793.25 MHz. 3 , 1 1 1 1——, 1 1 1 250 'tot 200 150 100 VOE = 12 V 100 150 .,..,.200 Power derating curve sl "J 1C-2 10-' 1 10 , 102 lc imAj DC current gain as a function of collector current: typical values