BFQ540 NJSEMI | Alldatasheet
Document overview
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Technical content
<z~>£,tni-L,onauctoi , Li ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN RF Transistor BFQ540
DESCRIPTION
- High Gain
- High Output Voltage
- Low Noise
APPLICATIONS
- Designed for use in VHP, UHF and CATV amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL VCBO VCES VEBO Ic PC Tj Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @TC=25'C Junction Temperature Storage Temperature Range VALUE 120 1.2 175 -65-150 UNIT V V V mA W r SOT- 8 9 package 2 : Emitter 3: Collector inno bl DIM b c D E A el L mm WIN i. ;o 0.32 0. 36 0.35 1. 10 1. 10 2.30 3. 9 :• MAX 1.60 0. 52 0.56 o. i; !, 16 1.80 2.60 ': ^^ 1, cOtyp 2.90 0.90 3. :0 1. 10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified SYMBOL V(BR)CES V(BR)CBO V(BR)EBO ICBO IEBO hpE fl Ore
1 S2ie I 2
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product Feedback Capacitance Insertion Power Gain Noise Figure CONDITIONS lc= 40 u A ; RBE= 0 lc= 10pA; IE=0 IE= 100uA; lc= 0 VCB= 8V; IE= 0 VEB= 1V; lc= 0 lc= 40mA ; VCE= 8V lc= 40mA ; VCE= 8V; f= 1 GHz lE=0;VCB=8V;f=1MHz lc= 40mA ; VCE= 8V; f= 900MHz lc= 40mA ; VCE= 8V; f= 900MHz MIN TYP. 0.9 1.9 MAX 0.05 0.2 250 2.4 UNIT V V V uA uA GHz PF dB dB 1.0 0.8 0.6 0.4 0.2 V,:E£9V. 50 100 150 T ,:,a 200 Power derating curve J' 103 (mAi Id2 1 10 SOAR