BFQ42 NJSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BFQ42 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, 8 or C operated mobile transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. The BFQ42 is especially suited as a driver transistor for the BLW29 in a two-stage wideband or semi-wide- band v.h.f. amplifier delivering 15 W output power. It has a TO-39 metal envelope with the collector connected to the case. QUICK REFERENCE DATA R.F. performance up to Tamb = 25 °C; Rth c.a = 32 K/W mode of operation c.w. class- B c.w. class-B VCE V 13,5 12,5 f MHz 175 175 PL w Gp dB > 11 typ. 10,5 > 60 typ. 65 Zj n 7,8-j4,6 mS 22 -JIB MECHANICAL DATA Fig.1 TO 39/1; collector connected to case. Dimensions in mm Maximum lead diameter is guaranteed only for 12,7 mm. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

A RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VgE = 0) peak value ^CESM Collector-emitter voltage (open base) VCEO Emitter-base voltage (open collector) VEBO Collector current (average) 'C(AV) Collector current (peak value); f > 1 MHz Total power dissipation up to Tmb ~ 25 °C Storage temperature Junction temperature 7277813 rtot max. max. max. max. max. max. 36 V 18 V 4 V 0,6 A 1,8 A 7,2 W ptot (W) n Tstg -65 to + 200 °C Tj max. 200 °C 7Z77S14 *•-.

  • *- X
  • *. "**
  • <«
  • >» -(2) ?"•> i (1) h *«i^
  • ~« k X X **s " ^
  • *, *^« di de rate by

037 W/K

016 W/K

' 5 6 7 8 910 V(V) 20 CE (1 ) Mounted on a heatsink, heatsink (2) Free-air operation; using a spring coolingclip. top view 0 50 100 150 Th- Tamb (°C) (1) Short-time r.f. operation during mismatch; Rthmb-h-3 K/W;Rtnc.a = 32 K/W; f>1 MHz. (2) Continuous d.c. and r.f. operation; Rthmb-h = 3 K/W; Rtn c.a = 32 K/W. Fig. 3 Total power dissipation; VCE < 16-5 V. Mounted on a heatsink. Free-air operation; using a spring cooling clip having a thermal resistance of 32 K/W.

V.H.F. power transistor l BFQ42 THERMAL RESISTANCE From junction to mounting base From junction to case From mounting base to heatsink CHARACTERISTICS TJ = 25 °C Collector-emitter breakdown voltage VBE = 0; lc - 2 mA Collector-emitter breakdown voltage open base; lc = 25 mA Emitter-base breakdown voltage open collector; IE = 1 mA Collector cut-off current VBE = 0; VCE= 18V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 n D.C. current gain * lc = 0,25 A; VCE =5 v Collector-emitter saturation voltage* IC = 0,75A; IB = 0,15 A Transition frequency at f = 100 MHz * -IE = 0,25A;VCB = 13,5V -IE =-0,75 A;VCB= 13,5V Collector capacitance at f = 1 MHz IE = ie = °; VCB= 13,5 v Feedback capacitance at f = 1 MHz lc = 20mA; VCE = 13,5V Rth j-mb Rth j-c Rth mb-h V(BR)CES V(BR)CEO V(BR)ESO 'CES ESBO ESBR hep i C vCEsat f-r fj cc Cre . typ.

24 K/W

29 K/W

3 K/W

0,5 mJ 0,5 mJ 10 to 60 typ. typ. typ. typ. typ. 0,9 V

750 MHz

625 MHz

8,6 pF 3,8 pF