BFQ29

BFQ29P SIEMENS | Alldatasheet

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Technical content

NPN Silicon RF Transistor BFQ 29P ESD :Electrostaticdischarge sensitive device, observe handling precautions! Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BFQ 29P Q62702-F659KC SOT-23 1 2 3 B E C Parameter Symbol Values Unit Collector-emitter voltage VCE0 15 V Emitter-base voltage VEB0 3 Collector current IC 30 mA Collector-base voltage VCB0 20 Base current IB 4 Junction temperature Tj 150 ˚C Ambient temperature range TA – 65 … + 150 Total power dissipation,TS £ 65 ˚C3) Ptot 280 mW Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA £ 385 K/W Junction - soldering point3) Rth JS £ 305 1) For detailed dimensions see chapter Package Outlines. 2) Package mounted on alumina 15 mm· 16.7 mm · 0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb. l For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. l CECC-type available: CECC 50002/258.

Electrical Characteristics

atTA = 25 ˚C, unless otherwise specified. UnitValuesParameter Symbol min. typ. max. DC Characteristics VCollector-emitter breakdown voltage IC = 1 mA,IB = 0 V(BR)CE0 15 – – mAEmitter-base cutoff current VEB = 3 V,IC = 0 IEB0 – – 100 –DC current gain IC = 3 mA,VCE = 6 V IC = 10 mA,VCE = 6 V hFE 140 250 mACollector-base cutoff current VCB = 10 V,IE = 0 VCB = 20 V,IE = 0 ICB0 0.05 VCollector-emitter saturation voltage IC = 20 mA,IB = 1 mA VCEsat – 0.1 0.4

atTA = 25 ˚C, unless otherwise specified. AC Characteristics UnitValuesParameter Symbol min. typ. max. Power gain IC = 20 mA,VCE = 6 V,f = 800 MHz, Z0 = 50W ,ZL =ZLopt G pe –1 4 – GHzTransition frequency IC = 3 mA,VCE = 6 V,f = 200 MHz IC = 20 mA,VCE = 6 V,f = 200 MHz fT 3.6 2.7 Collector-emitter capacitance VCE = 10 V,VBE =vbe = 0,f = 1 MHz C ce – 0.28 – Output capacitance VCE = 10 V,VBE =vbe = 0,f = 1 MHz C obs – 0.8 – dBNoise figure IC = 3 mA,VCE = 6 V,f = 10 MHz,ZS = 75W IC = 4 mA,VCE = 6 V,f = 800 MHz,ZS = 50W F 0.9 1.5 1.2 pFCollector-base capacitance V CB = 10 V,VBE =vbe = 0,f = 1 MHz C cb – 0.5 0.65 Input capacitance VEB = 0.5 V,IC =ic = 0,f = 1 MHz C ibo – 1.35 – Transducer gain IC = 20 mA,VCE = 6 V,f = 1 GHz,Z0 = 50W IS21e I2 –1 1 – mVLinear output voltage two-tone intermodulation test I C = 20 mA,VCE = 6 V,dIM = 60 dB, f1 = 806 MHz,f2 = 810 MHz,ZS =ZL = 50W Vo1 =Vo2 – 180 – dBmThird order intercept point IC = 20 mA,VCE = 6 V,f = 800 MHz IP3 –2 8 –

Total power dissipationPtot =f (TA *;TS) *Package mounted on alumina Collector-base capacitanceC cb =f (V CB ) VBE =vbe = 0,f = 1 MHz Transition frequencyfT =f (IC ) VCE = 6 V,f = 200 MHz

Noise figureF =f (ZS) VCE = 6 V,f = 10 MHz Common Emitter Noise Parameters f Gopt GHz dB dB MAG ANG W –d B d B F min G p(F min) R N NF 50 W G p(F 50W ) IC = 3 mA,VCE = 6 V,Z0 = 50W IC = 5 mA,VCE = 6 V,Z0 = 50W 0.01 0.8 0.85 1.25 (ZS = 100W ) 93.5 11.1 0.20 1.1 1.45 140.25

Circles of constant noise figureF =f (ZS) inZS-plane,IC = 5 mA,VCE = 6 V,f = 800 MHz Noise figureF =f (IC ) VCE = 6 V,f = 800 MHz,ZLopt (G )

Common Emitter S Parameters fS 11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.1 0.2 0.3 0.5 0.8 1.0 1.2 1.5 1.8 2.0 0.93 0.86 0.79 0.66 0.50 0.47 0.45 0.43 0.45 0.46 – 20 – 45 – 62 – 93 – 129 – 147 – 161 179 159 149 6.76 6.42 5.16 4.19 2.99 2.48 2.11 1.78 1.51 1.42 158 144 133 113 0.03 0.06 0.08 0.11 0.11 0.12 0.13 0.14 0.16 0.17 0.97 0.89 0.85 0.73 0.62 0.59 0.57 0.55 0.54 0.52 – 7 – 17 – 23 – 29 – 33 – 35 – 37 – 40 – 46 – 48 IC = 2 mA,VCE = 6 V,Z0 = 50W S11,S22 =f (f) IC = 2 mA,VCE = 6 V,Z0 = 50W S12,S21 =f (f) IC = 2 mA,VCE = 6 V,Z0 = 50W

Common Emitter S Parameters (continued) fS 11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.1 0.2 0.3 0.5 0.8 1.0 1.2 1.5 1.8 2.0 0.80 0.69 0.57 0.46 0.35 0.34 0.34 0.34 0.36 0.37 – 31 – 66 – 84 – 118 – 152 – 167 – 180 164 148 139 13.96 11.55 8.56 6.06 4.00 3.25 2.74 2.28 1.94 1.80 147 129 119 102 0.03 0.05 0.06 0.08 0.10 0.12 0.13 0.16 0.19 0.20 0.89 0.76 0.68 0.54 0.46 0.45 0.43 0.42 0.41 0.39 – 13 – 28 – 31 – 34 – 33 – 35 – 36 – 39 – 44 – 44 IC = 5 mA,VCE = 6 V,Z0 = 50W S11,S22 =f (f) IC = 5 mA,VCE = 6 V,Z0 = 50W S12,S21 =f (f) IC = 5 mA,VCE = 6 V,Z0 = 50W

Common Emitter S Parameters (continued) fS 11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.1 0.2 0.3 0.5 0.8 1.0 1.2 1.5 1.8 2.0 0.65 0.53 0.42 0.35 0.29 0.30 0.30 0.30 0.33 0.35 – 46 – 87 – 104 – 137 – 169 179 169 155 141 133 20.65 14.88 10.41 6.92 4.47 3.59 3.04 2.50 2.11 1.97 135 117 108 0.03 0.04 0.05 0.07 0.10 0.12 0.14 0.17 0.20 0.22 0.79 0.61 0.54 0.43 0.39 0.38 0.36 0.36 0.35 0.33 – 18 – 32 – 33 – 33 – 30 – 32 – 34 – 36 – 41 – 42 IC = 10 mA,VCE = 6 V,Z0 = 50W S11,S22 =f (f) IC = 10 mA,VCE = 6 V,Z0 = 50W S12,S21 =f (f) IC = 10 mA,VCE = 6 V,Z0 = 50W

Common Emitter S Parameters (continued) fS 11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG 0.1 0.2 0.3 0.5 0.8 1.0 1.2 1.5 1.8 2.0 0.47 0.40 0.33 0.31 0.28 0.29 0.30 0.30 0.33 0.35 – 64 – 108 – 125 – 154 178 169 161 148 135 128 25.26 16.60 11.22 7.16 4.57 3.65 3.09 2.54 2.15 2.00 126 109 102 0.02 0.03 0.04 0.06 0.09 0.12 0.14 0.17 0.21 0.22 0.69 0.50 0.46 0.39 0.36 0.36 0.35 0.34 0.34 0.32 – 21 – 32 – 30 – 28 – 26 – 28 – 30 – 33 – 39 – 39 IC = 20 mA,VCE = 6 V,Z0 = 50W S11,S22 =f (f) IC = 20 mA,VCE = 6 V,Z0 = 50W S12,S21 =f (f) IC = 20 mA,VCE = 6 V,Z0 = 50W