BFQ28

BFQ28 SIEMENS | Alldatasheet

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_ @5SE D MM 8235605 GOO4LIL 7? MM SIEG . 72 gpg Low Noise NPN Silicon Microwave Transistor __- BFQ 28 up to 4 GHz SIEMENS AKTIENGESELLSCHAF — BFQ 28 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods such as ion implantation technique, titanium-platinum-gold metallization as well as a glass-passivated chip surface ensure very high reliability. The transistor is particularly Suitable for low noise amplifiers and oscillators up to 4 GHz. It is marked on its package : with the short designation “28”. : Emitter : 3s 60s Es Type Mark Ordering code & & j BFO.28 28 062702-F627 Base Colecoe ° : Enitter i . M43 oT ot i Approx. weight 0.05 g Dimensions in mm . Maximum ratings (Tamb = 25°C) : Collector-emitter voltage Veo 15 v Collector-emitter voltage Ves 20 v : Collector-base voltage Veso 20 Vv Emitter-base voltage Veso 15 v Collector current Ic 15 mA Collector-peak current (t S 10 nsec) Tom 20 mA Storage temperature range Tstg -65to+175 | °C Junction temperature T 200 °c Total power dissipation (Tam = 160°C) Prot 200 mw Thermal resistance : Junction to ambient air Rina ‘| $250 | Kw . {when mounted on AL2 Os ceramics 16x25x0.6mm or glass-fiber reinforced Teflon 40x25x1.5 mm) : 662 _ : : 2000 C-07 .

a — ie, oe a _ BSE D m™ S235605 OOO4GL? 7 mm SIEG - > ; 25¢ 04617 OG -3/-L> BFO.28 | i Static characteristics (Tam = 26°C) | Collector cutoff current (Veso = 10 V) Ieao <1 WA ; Collector-emitter breakdown voltage (Ic =1mA) Viaajceo | 215 Vv ! Collector-base breakdown voltage (Ic =0.1mA) — Vianjceo.—«| 220 v i Emitter-base breakdown voltage (le =0.1 mA) — Vianyeao | 21.8 v | DC current gain (Ic = 10 mA; Vee = 10 V) hee 220 - { . Dynamic characteristics (Tam = 25°C) Transition frequency (Ic = 10 mA; Vee = 10 V; i f = 200 MHz) fe 5>45 GHz : ‘Small signal current gain (Ig = 10 mA; Veg = 10 V: f = 1 kHz) hte 60 - | Reverse transfer capacitance ! (Ic = 1 mA; Vg = 10 V; f= 1 MHz) Cize 0.25 pF | Noise figure . 1 Uc = 3 MA; Veg = 10 Vi f = 2 GHz; ZG =Zeopt) — ‘NFmin 3 dB : Power gain t Uc = 18 mA; Veg = 10 V; f = 2 GHz; 2, = Zropti i Zc = Zoot) pe opt 14 4B Insertion gain (Ic = 10 mA; Vog = 10 V; f = 2 GHz; Zo = 2, = 60.0) |Sarel? 9.5(>8) | dB i

2001 C-08 663

25— D M@™ 8235605 0004418 O mm SIEG |. —25C 04618 0-7-3 arg ag S parameter Operating point: Vce = 10 V, Ic = 3mA, Z) = 502 t Su 9 Sa 9 Siz ® S22 9 (GHz) i 0,1 0,869 - 16 818 166 0,010 77 0,999 - 4 ‘ 0,2 0,812 -31 7,80 153 0,016 | 71 0,989 - 10 i 0,3 0,807 - 46 7A1 143 0,025 | 61 0,928 - 16 . 0,4 0,784 - 67 6,38 134 0,031 55 0,896 - 17 { 0,5 0,715 -71 6,28 125 0,034 | 49 0,853 | - 20 } 06 0,673 - 83 5,95 117 0,038 46 0,835 - 23 if 0,7 0,627 - 92 5,59 110 0,042 | 42 0,843 | - 26 08 0,586 ~104 5,17 104 0,044 | 41 0,803 | - 26 0,9 0,565 -113 4,80 98 0,045 38 0,777 - 28 7 1,0 0,533 | -123 443 93 0,047 37 0,774 | - 30 | 1,1 0,532 | -132 4,07 88 0,049 | 35 0,740 | - 31 it 1,2 0,518 -137 3,80 83 0,049 | 38 0,721 - 35 H 1,3 0,498 -146 3,55 79 0,049 32 0,728 - 36 } 14 0,496 -151 3,34 74 0,061 32 0,716 - 37 ' 15 0,464 | -159 3,15 70 0,043 32 0,701 - 38 i 1,6 0,475 -164 3,00 68 0,050 | 34 0,704 | - 42 | 1,7 0,470 | -168 2,83 67 0,051 33 0,727 - 43 : 18 0,481 -173 2,69 60 0,053 33 0,712 - 43 i 1,9 0,468 -177 2,57 56 0,053 34 0,694 - 46 i 2,0 0,458 175 245 53 0,055 34 0,699 - 50 : 25 0,490 160 2,04 37 0,061 38 0,678 - 60 1 3,0 0,493 145 1,75 23 0,072 | 42 0,686 |- 71 3 35 0,534 130 1,52 9 0,088 | 43 0,668 | - 86 40 0,541 118 1,32 4 0,105 | 41 0,690 - 99 ; 45 0,575 103 1,18 -17 0,127 36 0,678 ~116 . . 5,0 0,609 95 1,01 -31 0,147 32 0,698 | -133 ij 5,5 0,635 84 0,87 -43 0,169 | 25 0,719 -148 i 6,0 0,658 80 0,74 -56 0,183 16 0,737 -168 | 664 . : 2002 c-09 . 1

wit Se OO ~ - re ~ 8 “4 25E D m@ 8235605 OOO4G1L9 2 me SIEG , 25C 04619 DTeIr-/5 BFO28 S parameter | Operating point: Veg = 10 V, Ic = 5 mA, Z) = 502 f Su 9 Sat 9 Si2 9 Soo ° ! (GHz) i 0,1 0,809 - 20 12,28 163 0,009 72 0,992 - 6 i 0,2 0,760 - 42 11,55 147 0,018 66 0,932 - 12 : 0,3 0,710 - 60 10,43 135 0,022 58 0,886 - 17 : 04 0,653 | - 76 9,30 125 0,026 53 0,841 - 19 | 05 0,602 - 89 8,24 116 0,029 48 0,801 - 21 t 06 0,558 -103 7,52 108 0,031 45 0,774 - 23 1 0,7 0,520 | -112 6,81 101 0,034 | 42 0,781 - 24 H 0,8 0,496 -124 6,23 95 0,036 | 42 0,750 | - 25 0,9 0,478 -133 5,66 90 0,038 | 42 0,728 - 27 1,0 0,455 -142 5,14 86 0,038 | 42 0,724 | - 29 1,1 0,468 ~-150 4,70 81 0,040 | 40 0,697 - 29 1,2 0,455 7-155 4,35 77 0,040 | 41 0,682 -%4 1,3 0,445 -163 4,02 73 0,041 ai 0,688 - 36 14 0,450 ~166 3,75 69 0,044 | 41 0,678 - 36 - 15 0,421 -175 3,52 65 0,043 | 42 0,669 - 37 1,6 0,440 -178 3,35 63 0,045 | 44 0,673 - 40 1,7 0,439 176 3,16 60 0,047 | 44 0,698 - 41 1,8 7 0,450 173 2,99 56 0,048 | 44 0,682 - 42 1,9 0,441 170 2,85 53 0,050 | 45 0,666 - 44 . 2,0 0,449 165 2,71 61 0,052 | 46 0,665 - 46 . 25 0,476 151 2,24 35 0,063 | 47 0,653 - 58 3,0 0,485 139 1,92 22 0,077 48 0,660 - 67 i 35 0,531 125 1,67 7 0,095 47 0,644 - 85 : 40 0,536 114 1,44 -6 0,111 43 0,668 - 98 ‘ 45 0,578 100 1,28 -18 0,134 | 38 0,658 -113 . 5,0 0,611 93 1,11 -32 0,156 33 0,681 -131 5,5 0,632 82 0,96 ~44 0,177 26 0,702 -146 6,0 0,652 78 0,81 -57 0,189 16 0,720 -167 . | - i 2003 c-10 865 :

ee bo wee -- - - ae ST De TT a | 25C D mm 8235605 0004620 9 MMSIEG. _ 256704620 OT 3/15 BFO.28 j SIEMENS AKTIENGESELLSCHAF | 5 parameter | Operating point: Vee = 10 V, le = 10 mA, Z) = 600 | i t Sn ° Sa ° Siz ° S22 9 | (GHz) 1 o1 |oeso |- 33 |1952 [156 |0007 172 |os71 |- @ i 0,2 0,613 - 64 17,02 136 0,013 59 0,877 - 14 } 03 |0550 |- 87 | 1413 | 123 0,017 | 53 0815 | - 17 | 04 |0507 |-105 | 11,70 | 112 |0020 |48 |0774 | - 19 i 05 0,475 -119 9,92 104 0,021 49 0,741 - 20 HH os |0456 |-132 | a68 | 97 |o0024 |48 | 0722 | - 21 ' o7 |0436 |-141 | 768 | 92 |o0026 |s0 |o734 | - 22 : og |o434 |-151 | 682 | 86 |o028 |50 |0707 | - 23 0,9 0,426 -158 6,15 82 0,029 50 0,694 - 25 . 10 | 0432 |-167 | 564 | 79 | 0031 |52 | 0693 | - 26 ut |0436 |-171 |; sot | 74 | 0033 | 51 0.672 | - 27 12 | 0420 |-175 | 461 | 71 | 0034 |53 | oes | - 31 13 |0434 | 177 | 426 | 67 |o036 |54 |oe71 | - 32 : 14 0,435 176 3,96 63 0,038 52 0,662 - 33 15 0,421 168 3,71 60 0,038 55 0,656 - 35 { 16 |0435 | 166 | 351 | 58 |oo41 |56 | oso | - 38 i 17 |.0439 | 162 | 330 | 55 | 0044 |56 |o683 | - 39 : 1,8 0,456 160 3,13 51 0,046 56 0,676 - 40 i 9 |o441 | 187 | 297 | 49 |o0o48 |s56 | 0655 | - 43 : 20 |0454 | 154 | 282 | 47 |0051 |56 | 0,656 | - 44 25 |o4es | 143 | 2:32 | 31 | 0064 |56 | 0,645 | - 56 30 |o4e6 | 132 | 1198 | 19 | 0079 | 55 0.656 | - 68 i 38 | 0648 | 120 | 172 | 6 |0o,100 |52 | 0642 | - 93 : 40 | 0563 | 109 | 1148 | -8 jortts | 47 0.671 | - 97 - 45 |os96 | 96 | 1,32 |-20 |o142 |40 | 0,660 | -112 . 50 |0630 | 89 | 114 |-34 |ote4 |34 | 0681 | -127 55 |0653 | 79 | o98 |-46 |o,185 | 27 0,700 | -145 : 60 |o671 | 75 | og3 |-s9 |oa198 |18 | 0,720 | -166 i 666 - : .

2004 C-11 -~-

_25C D MM 6235605 OOO04be1 O MMSIEG .— eo UtOEL uU “~ ey : ee WU TS & BFO 28 : $ parameter : i Operating point: Voe = 10 V, Ic = 18 mA, Z, = 502 : t f Su @ Sa @ Si2 9 S22 g . (GHz) : 01 | 0583 | - 46 | 2355 | 150 | 0,007 | 63 0946 |- 9 : 02 | 0527 |- 83 | 18,70 | 128 | 0012 | 56 0843 | - 14 - 03 | 0487 | -109 | 14.67 | 115 | 0016 | 51 0791 | - 16 04 |o4e4 |-126 | 11,71 | 108 | 016 | 53 0,766 | - 17 $ os |o461 | -138 | 9,75 | 98 | 0,017 | 50 0,734 | - 18 : o6 |0442 |-149 | 8,39 | 92 | 0,020 | 49 0718 }-19 07 | 0431 |-157 | 741 | 87 | 0,022 | 54 0,738 | - 20 og |0441 |-166 | 656 | 82 | 0,024 | 55 0718 | - 21 : o9 |0436 |-171 | 588 | 79 | 0,027 | 58 0,703 | - 23 10 | 0,447 |-178 | 526 | 76 | 0,028 | 57 0,705 | - 24 11 |0457 | 178 | 476 | 71 | 0030 | 57 0.686 | - 25 12 |0449 | 174 | 438 | 68 | 0,031 | 59 0,668 | - 30 13 | 0,457 | 168 | 402 | 64 | 0,033 | 60 0685 | - 31 . 14 |0455 | 168 | 375 | 61 | 0036 | 58 0677 | - 32 16 | 0446 | 160 | 351 | 58 | 0,036 | 61 0671 | - 33 : 16 | 0464 | 189 | 332 | 56 | 0039 | 61 0.674 | - 37 1.7 | 0467 | 165 | 3,12 | 63 | 0,042 | 62 0.701 | - 38 ig “|o480 | 154 | 295 | 49 | 0044 | 62 0692 |'- 39 - : 19 |0468 | 151 | 280 | 46 | 0046 | 61 0673 | - 42 20 |0481 | 149 | 268 | 44 | 0049 | 62 0674 | - 43 : 25 |0612 | 139 | 221 | 29 | 0,064 | 61 0663 | - 56 30 |0521 | 128 | 187 | 17 | 0081 | 60 0.677 | - 67 35 |0574 | 117 | 1,62 3 | 0,101 | 66 0663 | - 83 40 0,581 106 1,39 -10 0,121 50 0,687 - 96 45 | 0,622 94 | 1.23 |-22 | 0146 | 43 0676 | -112 50 | 0.655 87 | 1.06 |-36 | 0,169 | 37 0.697 | -130 > 55 |0673 | 77 | 091 |-48 | 0191 | 28 0716 | -146 60 | 0,690 73 | 077 |-60 | 0205 | 19 0,734 | -166 i ---- Tote 667 2005 c-12 :

a ; 25C D MM 8235605 OOONL22 2 MMSIEG }- ~ Ee Uses UTE STANT pang | SIEMENS AKTIENGESELLSCHAF i Totel perm. power dissipation : ‘versus temperature 1 mW Pit ™ Tar) i oes OO i . a, CCCP \\ aaa eaees i i EEE ! wo EE onan : LT TTT TT yyy | j Ht EE ee i el EER ‘ COPE ree : oy : Ltt yy yy in : i ty TTT rr ri | LT ETT Tr Tin 3 SER eee ! »LLC ELE ; () 100 200°C H Gain at noise matching Insertion gein Gy =F Uc}: NF = f Uc) [Satel? = f ic): Vee = parameter: . dB Yee" 10V: f= 2 GHz 4820 = 2, = 800; f= 2GHz 2 2 : HET HTT ; Gat, ee cceanne soto LLL TTT svt | , * i Ler TTT { Hee . aU SHAAN | : HTT) LTT New | i eT ‘ LYE eT TDN | i HT LTT EN TTT i f 4 SY LTT Neen] | [ATT | eel EET LUTTE NTT i ARRRRRORRDOR RROD ®HTTTTTTT LTT HTT sLLUTIT TTT sLLUTTTTTA 0 2 6 6 8 0 12 % 16 mA 0 2 4 6 8 10 12 Hh 16mA 1 —k —+k i C1: 2006 c-13