BFQ19S

BFQ19S SIEMENS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Semiconductor Group 1 Dec-16-1996 BFQ 19S NPN Silicon RF Transistor

• For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA
• CECC-type available: CECC 50 002/259 ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFQ 19S FGs Q62702-F1088 1 = B 2 = C 3 = E SOT-89 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCBO 20 Emitter-base voltage VEBO 3 Collector current IC 75 mA Base current IB 12 Total power dissipation TS ≤ 85 °C Ptot W Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 65 K/W

Semiconductor Group 2 Dec-16-1996 BFQ 19S Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 15 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 2 V, IC = 0 IEBO - - 10 µA DC current gain IC = 70 mA, VCE = 8 V hFE 40 100 220

Semiconductor Group 3 Dec-16-1996 BFQ 19S Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 70 mA, VCE = 8 V, f = 500 MHz fT 4 5.5 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz C cb - 1 1.5 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz C ce - 0.4 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C eb - 4.4 - Noise figure IC = 20 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz F 2.5 dB Power gain 2) IC = 70 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz G ma 11.5 Transducer gain IC = 30 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz |S21e|2 9.5 Third order intercept point IC = 70 mA, VCE = 8 V, f = 900 MHz ZS =ZL= 50 Ω IP3 - 35 - dBm

Semiconductor Group 4 Dec-16-1996 BFQ 19S Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA ,TS 100 200 300 400 500 600 700 800 900 1000 mW 1200 Ptot TS TA Permissible Pulse Load R thJS = f (tp) s tp 0 10 1 10 2 10 K/W R thJS D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load Ptotmax/PtotDC = f (tp) s tp 0 10 1 10 2 10 P totmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5