BFP81

BFP81 SIEMENS | Alldatasheet

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Semiconductor Group 1 Dec-11-1996 BFP 81 NPN Silicon RF Transistor

• For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 81 FAs Q62702-F1611 1 = C 2 = E 3 = B 4 = E SOT-143 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 16 V Collector-emitter voltage VCES 25 Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2 Collector current IC 30 mA Base current IB 4 Total power dissipation TS ≤ 73 °C Ptot 280 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 275 K/W 1) TS is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group 2 Dec-11-1996 BFP 81 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 16 - - V Collector-emitter cutoff current VCE = 25 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 2 V, IC = 0 IEBO - - 10 µA DC current gain IC = 15 mA, VCE = 8 V hFE 50 120 200

Semiconductor Group 3 Dec-11-1996 BFP 81 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz fT 4.5 5.8 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz C cb - 0.3 0.5 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz C ce - 0.29 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C eb - 0.9 - Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz F 2.2 1.45 dB Power gain 2) IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz G ma 13.5 Transducer gain IC = 15 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz |S21e|2 9.5 15.5

Semiconductor Group 4 Dec-11-1996 BFP 81 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 17.03 fA VAF = 35 V NE = 1.0668 - VAR = 2.3785 V NC = 1.2237 - RBM = 1.5489 Ω CJE = 33.977 fF TF = 21.842 ps ITF = 14.701 mA VJC = 0.26339 V TR = 1.2554 ns MJS = 0- XTI = 3- BF = 110 - IKF = 0.22241 A BR = 25.974 - IKR = 0.011566 A RB = 5.7058 Ω RE = 1.1731 Ω VJE = 0.4318 V XTF = 0.26781 - PTF = 0 deg MJC = 0.24448 - CJS = 0 fF XTB = 0 - FC = 0.74346 - NF = 0.80846 - ISE = 5.8728 fA NR = 0.36321 - ISC = 169.77 fA IRB = 0.11894 mA RC = 0.3715 Ω MJE = 1.7707 - VTF = 0.48042 V CJC = 693.81 fF XCJC = 0.1254 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: LBI = 0.89 nH LBO = 0.73 nH LEI = 0.4 nH LEO = 0.15 nH LCI = 0n H LCO = 0.42 nH CBE = 189 fF CCB = 15 fF CCE = 187 fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm

Semiconductor Group 5 Dec-11-1996 BFP 81 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA ,TS 100 150 200 mW 300 Ptot TS TA Permissible Pulse Load R thJS = f (tp) s tp 1 10 2 10 3 10 K/W R thJS D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load Ptotmax/PtotDC = f (tp) s tp 0 10 1 10 2 10 Ptotmax/P totDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Semiconductor Group 6 Dec-11-1996 BFP 81 Collector-base capacitance C cb = f (VCB ) VBE = vbe = 0, f = 1MHz 0 4 8 12 16 V 22 V R 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 pF 0.9 C cb Transition frequency fT = f (IC ) VCE = Parameter 0 5 10 15 20 25 mA 35 IC 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 GHz 6.0 fT 2V 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 0 5 10 15 20 25 mA 35 IC dB G 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 1.8GHz VCE = Parameter 0 5 10 15 20 25 mA 35 IC dB G 10V 0.7V

Semiconductor Group 7 Dec-11-1996 BFP 81 Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 2 4 6 8 V 12 V CE dB G 0.9GHz 1.8GHz 0.9GHz 1.8GHz IC =15mA Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50Ω ) VCE = Parameter, f = 900MHz 0 4 8 12 16 20 24 28 mA 34 IC dBm IP3 Power Gain G ma , G ms = f(f) VCE = Parameter f dB G 10V 0.7V IC =15mA Power Gain |S21|2= f(f) VCE = Parameter f dB S21 10V 1V 0.7V IC =15mA