BFP740FE6327 INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 10

Technical content

NPN Silicon Germanium RF Transistor

  • High gain ultra low noise RF transistor
  • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more
  • Ideal for CDMA and WLAN applications
  • Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.75 dB at 6 GHz
  • High maximum stable gain Gms = 27.5 dB at 1.8 GHz
  • Gold metallization for extra high reliability
  • 150 GHz fT-Silicon Germanium technology
  • Pb-free (RoHS compliant) package1)
  • Qualified according AEC Q101 Direction of Unreeling Top View XYs ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP740F R7s 1=B 2=E 3=C 4=E - - TSFP-4 1Pb-containing package may be available upon special request

Parameter Symbol Value Unit Collector-emitter voltage TA > 0°C TA ≤ 0°C VCEO 3.5 V Collector-emitter voltage VCES 13 Collector-base voltage VCBO 13 Emitter-base voltage VEBO 1.2 Collector current IC 30 mA Base current IB 3 Total power dissipation1) TS ≤ 90°C Ptot 160 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS ≤ 370 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage I C = 1 mA, IB = 0 V(BR)CEO 4 4.7 - V Collector-emitter cutoff current VCE = 13 V, VBE = 0 ICES - - 30 µA Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 0.5 V, IC = 0 IEBO - - 3 µA DC current gain IC = 25 mA, VCE = 3 V, pulse measured hFE 160 250 400 - 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 25 mA, VCE = 3 V, f = 1 GHz fT - 42 - GHz Collector-base capacitance VCB = 3 V, f = 1 MHz, VBE = 0 , emitter grounded Ccb - 0.08 0.14 pF Collector emitter capacitance VCE = 3 V, f = 1 MHz, VBE = 0 , base grounded Cce - 0.2 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Ceb - 0.44 - Noise figure IC = 8 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt IC = 8 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt F 0.5 0.75 dB Power gain, maximum stable1) IC = 25 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gms - 27.5 - dB Power gain, maximum available1) IC = 25 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz Gma - 19 - dB Transducer gain IC = 25 mA, VCE = 3 V, ZS = ZL = 50 Ω , f = 1.8 GHz f = 6 GHz |S21e|2 dB Third order intercept point at output2) VCE = 3 V, IC = 25 mA, ZS=ZL=50 Ω , f = 1.8 GHz IP3 - 25 - dBm 1dB Compression point at output IC = 25 mA, VCE = 3 V, ZS=ZL=50 Ω , f = 1.8 GHz P-1dB - 11 - 1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: IS = 384.4 aA VAF = 400 V NE = 1.586 - VAR = 1.28 V NC = 1.5 - RBM = 1.69 Ω CJE = 220 fF TF = 2.1 ps ITF = 290 mA VJC = 550 mV TR = 13 ps MJS = 180 m XTI = 910 m AF = 1 - BF = 1.1 k IKF = 512.1 mA BR = 62 - IKR = 5 mA RB = 3.23 Ω RE = 90 m Ω VJE = 590 mV XTF = 3 - PTF = 100 mdeg MJC = 152 m CJS = 79.7 fF XTB = -2.2 - FC = 950 m KF = 0 - NF = 1.018 - ISE = 4.296 fA NR = 1- ISC = 3.85 fA IRB = 10 A RC = 6.88 Ω MJE = 70 m VTF = 1.32 V CJC = 99.5 fF XCJC = 10 m VJS = 570 mV EG = 1.11 eV TNOM 298 K All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: LBC = 0.1 nH LCC = 0.2 nH LEC = 20 pH LBB = 0.411 nH LCB = 0.696 nH LEB = 21 pH CBEC = 0.1 pF CBCC = 1 fF CES = 0.34 pF CBS = 39 fF CCS = 75 fF CCEO = 0.177 pF CBEO = 92 fF CCEI = 0.217 pF CBEI = 52 fF REC =2 Ω RBS = 3.5 kΩ RCS = 1.65 k Ω RES = 90 Ω B C E CCEOCBEO CCEICBEI CBEC CBCC S C B E LBC LCC LEC CBS RCS RES LBB LCB LEB RBS CCS CES REC BFP740F_Chip Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com

Total power dissipation Ptot = ƒ(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 100 120 140 mW 180 Ptot Permissible Pulse Load RthJS = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/WRthJS D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Collector-base capacitance Ccb = ƒ (VCB) f = 1 MHz 0 2 4 6 8 10 12 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 VCB [V] C cb [pF]

Third order Intercept Point IP3 = ƒ (IC) (Output, ZS = ZL = 50 Ω ) VCE = parameter, f = 900 MHz 0 5 10 15 20 25 30 35 IC [mA] IP3 [dBm] 1.00V 2.00V 3.00V 4.00V Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz 0 5 10 15 20 25 30 35 IC [mA] fT [GHz] 2V to 4V 1.00V 0.75V 0.50V Power gain Gma, Gms = ƒ (f) VCE = 3 V, IC = 25 mA 0 1 2 3 4 5 6 f [GHz] [GHz] G [dB] G ms G ma |S21|2 Power gain Gma, Gms = ƒ (IC) VCE = 3 V f = parameter in GHz 0 5 10 15 20 25 30 35 IC [mA] G [dB] 6.00GHz 5.00GHz 4.00GHz 3.00GHz 2.40GHz 1.80GHz 0.90GHz

Power gain Gma, Gms = ƒ (VCE) IC = 25 mA f = parameter in GHz VCE [V] G [dB] 6.00GHz 5.00GHz 4.00GHz 3.00GHz 2.40GHz 1.80GHz 0.90GHz Noise figure F = ƒ(IC) VCE = 3 V, f = parameter in GHz ZS = ZSopt 0 5 10 15 20 25 30 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 F [dB] Ic [mA] f = 0.9GHz f = 3GHz f = 2.4GHz f = 6GHz f = 5GHz f = 1.8GHz Noise figure F = ƒ(IC) VCE = 3 V, f = 1.8 GHz 0 5 10 15 20 25 30 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Ic [mA] F [dB] ZS = 50Ω ZS = ZSopt Noise figure F = ƒ(f) VCE = 3 V, ZS = ZSopt 0 1 2 3 4 5 6 7 0.2 0.4 0.6 0.8 1.2 1.4 F [dB] f [GHz] IC = 25mA IC = 8mA

Source impedance for min. noise figure vs. frequency VCE = 3 V, IC = 8 mA / 25 mA 10.2 0.4 2 40 1.5 −10 −1.5 0.5 −0.5 0.1 −0.1 0.2 −0.2 0.3 3 −0.3 −3 0.4 −0.4 3GHz Ic = 8mA 1.8GHz 6GHz 5GHz 0.9GHz Ic = 25mA 4GHz 2.4GHz

Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel BFP420F Type codePin 1 0.35 0.45 0.9 0.5 0.5 4 0.2 1.55 0.7 1.4 Pin 1 ±0.050.2 ±0.051.4 10˚ MAX. ±0.050.8 1.2±0.05 ±0.040.55 ±0.050.2 ±0.050.15±0.050.2 0.5±0.05 0.5±0.05 Manufacturer

81726 München, Germany

© Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.