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RF & Protection Devices Data Sheet Revision 1.0, 2010-06-29 BFP740ESD Robust High Performance Low Noise Bipolar RF Transistor

81726 Munich, Germany

© 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Data Sheet 3 Revision 1.0, 2010-06-29 Trademarks of Infineon Technologies AG BlueMoon™, COMNEON™, C166 ™, CROSSAVE™, CanPAK™, CIPOS™ , CoolMOS™, CoolSET™, CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDG E™, EconoDUAL™, Eco noPACK™, EconoPIM™, EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFAC E™, I²RF™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™, PRIMARION™, PrimePAC K™, RASIC™, ReverSave™ , SatRIC™, SensoNor™, SIEGET™, SINDRION™, SMARTi™, SmartLEWIS™, TEMPFET™ , thinQ!™, TriCore™, TRENCHSTOP™, X-GO LD™, XMM™, X-PMU™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Tech nologies, AMBA™, ARM™, MU LTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™ , FirstGPS™ of Trimble Navigation FlexRay™ is licensed by FlexRa y Consortium. HYPERTERMINAL™ of Hilgraeve Incorpor ated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATI ON. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphi cs Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Si rius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRO NIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RI VER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-03-22 BFP740ESD, Robust High Performance Low Noise Bipolar RF Transistor Revision History: 2010-06-29, Revision 1.0 Previous Revision: Page Subjects (major cha nges since last revision)

Data Sheet 4 Revision 1.0, 2010-06-29 Table of Contents

Data Sheet 6 Revision 1.0, 2010-06-29 List of Tables

Product Name Package Pin Configuration Marking BFP740ESD SOT343 1 = B 2 = E 3 = C 4 = E T7s Robust High Performance Low Noise RF Bipolar Transistor BFP740ESD Data Sheet 7 Revision 1.0, 2010-06-29

1 Features

  • Robust high performance low noise amplifier based on Infineon´s reliable, high volume SiGe:C wafer technology
  • 2 kV ESD robustness (HBM) due to integrated protection circuits
  • High maximum RF input power of 21 dBm
  • 0.65 dB minimum noise figure typical at 2.4 GHz, 0.9 dB at 5.5 GHz, 6 mA
  • 25.5 dB maximum gain ( Gma, Gms) typical at 2.4 GHz, 18.5 dB at 5.5 GHz, 25 mA
  • 24 dBm OIP3 typical at 5.5 GHz, 25 mA
  • Accurate SPICE GP model available to enable effective design in process (see chapter 6)
  • Easy to use, Pb- and halogen free (RoHS compliant) standard package with visible leads

Applications

As Low Noise Amplifier (LNA) in

  • Mobile, portable and fixed connectivity applicatio ns: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, Bluetooth
  • Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
  • Multimedia applications such as mobile/portable TV, CATV, FM Radio
  • 3G/4G UMTS/LTE mobile phone applications
  • ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications As discrete active mixer, amplifier in VCOs and buffer amplifier Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions

Data Sheet 8 Revision 1.0, 2010-06-29

2 Product Brief

The BFP740ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojuncti on wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visi ble leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figu re at low operation current for use in a wide range of wireless applications. The BFP740ESD is especially well-suited for portable ba ttery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.2 V. Table 1 Quick Reference DC Characteristics at TA = 25°C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Collector emitter breakdown voltage V(BR)CEO 4.2 4.7 – V IC =1m A , IB =0 Open base Collector base leakage current ICBO ––4 0 0 n A VCB =2V , IE =0 Open emitter DC current gain hFE 160 250 400 VCE =3V , IC =2 5m A Collector current IC ––4 5 m A Total power dissipation Ptot ––1 6 0 m W TS ≤ 98 °C

Data Sheet 9 Revision 1.0, 2010-06-29 Table 2 Quick Reference AC Characteristics at TA = 25°C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Transition frequency fT –4 5 –G H z VCE =3V , IC =2 5m A f =2G H z VCE = 3 V, f = 2.4 GHz Maximum power gain dB Low noise operation point Gms –2 2 – IC =6m A High linearity operation point Gms –2 5 . 5 – IC =2 5m A Transducer gain dB ZS = ZL =5 0 Ω Low noise operation point S21 –1 9 . 5 – IC =6m A High linearity operation point S21 –2 2 – IC =2 5m A Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin –0 . 6 5 – IC =6m A Associated gain Gass –2 0 – IC =6m A Linearity dBm ZS = ZL =5 0 Ω 1 dB gain compression point OP1dB –1 0 . 5 – IC =2 5m A 3rd order intercept point OIP3 –2 5 – IC =2 5m A VCE =3V , f = 5.5 GHz Maximum power gain dB Low noise operation point Gms –1 9 – IC =6m A High linearity operation point Gma –1 8 . 5 – IC =2 5m A Transducer gain dB ZS = ZL =5 0 Ω Low noise operation point S21 –1 3 – IC =6m A High linearity operation point S21 –1 4 . 5 – IC =2 5m A Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin –0 . 9 – IC =6m A Associated gain Gass –1 3 . 5 – IC =6m A Linearity dBm ZS = ZL =5 0 Ω 1 dB gain compression point OP1dB –1 0 – IC =2 5m A 3rd order intercept point OIP3 –2 4 – IC =2 5m A

Data Sheet 10 Revision 1.0, 2010-06-29

3 Maximum Ratings

Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Table 3 Maximum Ratings at TA = 25°C (unless otherwise specified) Parameter Symbol Values Unit Note / Test Condition Min. Max. Collector emitter voltage VCEO Open base –4 . 2 V TA = 25°C –3 . 7 V TA = -55 °C Collector emitter voltage1) 1) Low VCBO due to integrated protection circuits VCBO Open emitter –4 . 9 V TA = 25°C –4 . 4 V TA = -55 °C Collector emitter voltage2) 2) VCES is identical to VCEO due to integrated protection circuits. VCES Emitter / base shortened –4 . 2 V TA = 25°C –3 . 7 V TA = -55 °C Base current3) 3) Sustainable reverse bias current is high due to integrated protection circuits. IB -10 5 mA – Collector current IC –4 5 m A – RF input power PRFin –2 1 d B m – ESD stress pulse4) 4) ESD robustness is high due to integrated protection circuits. VESD -2 2 kV HBM, all pins, acc. to JESD22-A114 Total power dissipation5) 5) TS is the soldering point temperature. TS measured on the emitter lead at the soldering point of the pcb. Ptot –1 6 0 m W TS ≤ 98 °C Junction temperature TJ –1 5 0 ° C – Storage temperature TStg -55 150 °C –

Data Sheet 11 Revision 1.0, 2010-06-29

4 Thermal Characteristics

Figure 1 Total Power Dissipation Ptot = f (Ts) Table 4 Thermal Resistance Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Junction - soldering point1) 1) For calculation of RthJA please refer to Application Note Thermal Resistance AN 077 RthJS –3 2 5 –K / W – 0 25 50 75 100 125 150 100 120 140 160 180 TS [°C] Ptot [mW]

Electrical Characteristics

Data Sheet 12 Revision 1.0, 2010-06-29

5 Electrical Characteristics

5.1 DC Characteristics

5.2 General AC Characteristics

Table 5 DC Characteristics at TA =2 5° C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Collector emitter breakdown voltage V(BR)CEO 4.2 4.7 – V IC =1m A , IB =0 Open base Collector emitter leakage current ICES ––4 0 0 n A VCE =2V , VBE =0 Emitter/base shortened Collector base leakage current ICBO ––4 0 0 n A VCB =2V , IE =0 Open emitter Emitter base leakage current IEBO ––1 0 μA VEB =0 . 5V , IC =0 Open collector DC current gain hFE 160 250 400 VCE =3V , IC = 25 mA Pulse measured Table 6 General AC Characteristics at TA =2 5° C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Transition frequency fT –4 5 –G H z VCE =3V , IC =2 5m A f =2G H z Collector base capacitance CCB –0 . 0 8 –p F VCB =3V , VBE =0 f =1M H z Emitter grounded Collector emitter capacitance CCE –0 . 4 5 –p F VCE =3V , VBE =0 f =1M H z Base grounded Emitter base capacitance CEB –0 . 5 5 –p F VEB =0 . 4V , VCB =0 f =1M H z Collector grounded

Data Sheet 13 Revision 1.0, 2010-06-29

5.3 Frequency Dependent AC Characteristics

Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C Figure 2 BFP740ESD Testing Circuit Table 7 AC Characteristics, VCE = 3 V, f =1 5 0M H z Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum power gain dB Low noise operation point Gms –3 4 – IC =6m A High linearity operation point Gms –3 8 . 5 – IC =2 5m A Transducer gain dB ZS = ZL =5 0 Ω Low noise operation point S21 –2 5 – IC =6m A High linearity operation point S21 –3 4 – IC =2 5m A Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin –0 . 5 5 – IC =6m A Associated gain Gass –3 0 . 5 – IC =6m A Linearity dBm ZS = ZL =5 0 Ω 1 dB gain compression point OP1dB –9– IC =2 5m A 3rd order intercept point OIP3 –2 3 . 5 – IC =2 5m A IN OUT Bias -T Bias-T B (Pin 1) E C E VC Top View VB

Data Sheet 14 Revision 1.0, 2010-06-29 Table 8 AC Characteristics, VCE = 3 V, f =4 5 0M H z Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum power gain dB Low noise operation point Gms –2 9 – IC =6m A High linearity operation point Gms –3 3 . 5 – IC =2 5m A Transducer gain dB ZS = ZL =5 0 Ω Low noise operation point S21 –2 4 . 5 – IC =6m A High linearity operation point S21 –3 2 – IC =2 5m A Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin –0 . 5 5 – IC =6m A Associated gain Gass –2 8 . 5 – IC =6m A Linearity dBm ZS = ZL =5 0 Ω 1 dB gain compression point OP1dB –9 . 5 – IC =2 5m A 3rd order intercept point OIP3 –2 3 . 5 – IC =2 5m A Table 9 AC Characteristics, VCE = 3 V, f =9 0 0M H z Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum power gain dB Low noise operation point Gms –2 6 – IC =6m A High linearity operation point Gms –3 0 . 5 – IC =2 5m A Transducer gain dB ZS = ZL =5 0 Ω Low noise operation point S21 –2 3 . 5 – IC =6m A High linearity operation point S21 –2 9 – IC =2 5m A Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin –0 . 5 5 – IC =6m A Associated gain Gass –2 5 . 5 – IC =6m A Linearity dBm ZS = ZL =5 0 Ω 1 dB gain compression point OP1dB –9 . 5 – IC =2 5m A 3rd order intercept point OIP3 –2 4 – IC =2 5m A

Data Sheet 15 Revision 1.0, 2010-06-29 Table 10 AC Characteristics, VCE = 3 V, f = 1.5 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum power gain dB Low noise operation point Gms –2 3 . 5 – IC =6m A High linearity operation point Gms –2 8 – IC =2 5m A Transducer gain dB ZS = ZL =5 0 Ω Low noise operation point S21 –2 2 – IC =6m A High linearity operation point S21 –2 5 . 5 – IC =2 5m A Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin –0 . 6 – IC =6m A Associated gain Gass –2 3 – IC =6m A Linearity dBm ZS = ZL =5 0 Ω 1 dB gain compression point OP1dB –1 0 – IC =2 5m A 3rd order intercept point OIP3 –2 4 . 5 – IC =2 5m A Table 11 AC Characteristics, VCE = 3 V, f = 1.9 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum power gain dB Low noise operation point Gms –2 2 . 5 – IC =6m A High linearity operation point Gms –2 6 . 5 – IC =2 5m A Transducer gain dB ZS = ZL =5 0 Ω Low noise operation point S21 –2 1 – IC =6m A High linearity operation point S21 –2 4 – IC =2 5m A Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin –0 . 6 – IC =6m A Associated gain Gass –2 1 – IC =6m A Linearity dBm ZS = ZL =5 0 Ω 1 dB gain compression point OP1dB –1 0 – IC =2 5m A 3rd order intercept point OIP3 –2 5 – IC =2 5m A

Data Sheet 16 Revision 1.0, 2010-06-29 Table 12 AC Characteristics, VCE = 3 V, f = 2.4 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum power gain dB Low noise operation point Gms –2 2 – IC =6m A High linearity operation point Gms –2 5 . 5 – IC =2 5m A Transducer gain dB ZS = ZL =5 0 Ω Low noise operation point S21 –1 9 . 5 – IC =6m A High linearity operation point S21 –2 2 – IC =2 5m A Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin –0 . 6 5 – IC =6m A Associated gain Gass –2 0 – IC =6m A Linearity dBm ZS = ZL =5 0 Ω 1 dB gain compression point OP1dB –1 0 . 5 – IC =2 5m A 3rd order intercept point OIP3 –2 5 – IC =2 5m A Table 13 AC Characteristics, VCE = 3 V, f = 3.5 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum power gain dB Low noise operation point Gms –2 0 . 5 – IC =6m A High linearity operation point Gms –2 3 – IC =2 5m A Transducer gain dB ZS = ZL =5 0 Ω Low noise operation point S21 –1 7 – IC =6m A High linearity operation point S21 –1 9 – IC =2 5m A Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin –0 . 7 – IC =6m A Associated gain Gass –1 6 . 5 – IC =6m A Linearity dBm ZS = ZL =5 0 Ω 1 dB gain compression point OP1dB –1 0 . 5 – IC =2 5m A 3rd order intercept point OIP3 –2 4 . 5 – IC =2 5m A

Data Sheet 17 Revision 1.0, 2010-06-29 Note: 1. G ms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1 2. In order to get the NF min values stated in this chapter the test fixture losses have been subtracted from all measured results. 3. OIP33 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. Table 14 AC Characteristics, VCE = 3 V, f = 5.5 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum power gain dB Low noise operation point Gms –1 9 – IC =6m A High linearity operation point Gma –1 8 . 5 – IC =2 5m A Transducer gain dB ZS = ZL =5 0 Ω Low noise operation point S21 –1 3 – IC =6m A High linearity operation point S21 –1 4 . 5 – IC =2 5m A Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin –0 . 9 – IC =6m A Associated gain Gass –1 3 . 5 – IC =6m A Linearity dBm ZS = ZL =5 0 Ω 1 dB gain compression point OP1dB –1 0 – IC =2 5m A 3rd order intercept point OIP3 –2 4 – IC =2 5m A Table 15 AC Characteristics, VCE = 3 V, f =1 0G H z Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum power gain dB Low noise operation point Gms –1 4 . 5 – IC =6m A High linearity operation point Gms –1 4 . 5 – IC =2 5m A Transducer gain dB ZS = ZL =5 0 Ω Low noise operation point S21 –5 . 5 – IC =6m A High linearity operation point S21 –7 . 5 – IC =2 5m A Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin –1 . 8 – IC =6m A Associated gain Gass –8 . 5 – IC =6m A Linearity dBm ZS = ZL =5 0 Ω 1 dB gain compression point OP1dB –7 . 5 – IC =2 5m A 3rd order intercept point OIP3 –2 1 – IC =2 5m A

Data Sheet 18 Revision 1.0, 2010-06-29

5.4 Characteristic DC Diagrams

Figure 3 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter Figure 4 DC Current Gain hFE = f (IC), VCE = 3 V V CE [V] IC [mA] IB = 5µA IB = 25µA IB = 45µA IB = 65µA IB = 85µA IB = 105µA IB = 125µA IB = 145µA IB = 165µA IB = 185µA IB = 205µA IB = 225µA 100 1000 0.1 1 10 100 IC [mA] hFE 100 1000 0.1 1 10 100 IC [mA] hFE

Data Sheet 20 Revision 1.0, 2010-06-29 Figure 7 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V 1.E-11 1.E-10 1.E-09 1.E-08 1.E-07 1.E-06 1.E-05 1.E-04 V EB [V] IB [A]

Data Sheet 21 Revision 1.0, 2010-06-29

5.5 Characteristic AC Diagrams

Figure 8 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter Figure 9 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters 0 5 10 15 20 25 30 35 40 IC [mA] fT [GHz] 3 to 4V 2.5V 0 5 10 15 20 25 30 35 IC [mA] OIP3 [dBm] 2V, 2.4GHz 3V, 2.4GHz 2V, 5.5GHz 3V, 5.5GHz

Data Sheet 27 Revision 1.0, 2010-06-29

6 Simulation Data

For the SPICE Gummel Poon (GP) model as well as fo r the S-parameters (including noise parameters) please refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP740ESD SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very qu ickly and conveniently. The model alre ady contains the package parasitics and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP740ESD SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted.

Data Sheet 28 Revision 1.0, 2010-06-29

7 Package Information SOT343

Figure 21 Package Foot Print Figure 22 Marking Example (Marking BFP740ESD: T7s) Figure 23 Tape Dimensions SOT343-PO V08 1.25 ±0.1 0.1 MAX.2.1±0.1 0.15 +0.1 -0.050.3+0.1 2 ±0.2 ±0.10.9 A +0.10.6 AM0.2 1.3 -0.05 -0.05 0.15 0.1 M 0.10.1 MIN. 0.6 SOT343-FP V08 0.8 1.6 1.15 0.9 MarkingPin 1 Manufacturer XYs MarkingPin 1 Manufacturer XYs SOT323-TP V02 0.24 2.15 2.3 1.1Pin 1

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