BFP720 INFINEON | Alldatasheet
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RF & Protection Devices Data Sheet Revision 1.0, 2009-01-20 BFP720 SiGe:C Heterojunction Wideband RF Bipolar Transistor
81726 Munich, Germany
© 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet 3 Revision 1.0, 2009-01-20 Trademarks of Infineon Technologies AG A-GOLD™, BlueMoon™, COMNEO N™, CONVERGATE™, COSIC™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CONVERPATH™, CORECONTROL™ , DAVE™, DUALFALC™, DUSLIC™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, Econo PACK™, EconoPIM™, E- GOLD™, EiceDRIVER™, EUPEC™, ELIC™, EPIC™, FALC ™, FCOS™, FLEXISLIC™, GE MINAX™, GOLDMO S™, HITFET™, HybridPACK™, INCA™, ISAC™, ISOFACE™, Iso PACK™, IWORX™, M-GOLD™, MIPAQ™, ModSTACK™, MUSLIC™, my-d™, NovalithIC™, OCTALFALC™, OCTAT™, OmniTune™, OmniVia™, OptiMOS™, OPTIVERSE™, ORIGA™, PROFET™, PRO-SIL™, PrimePACK™, QUAD FALC™, RASIC™, ReverSave™, SatRIC™, SCEPTRE™, SCOUT™, S-GOLD™, Se nsoNor™, SEROCCO™, SICOFI™, SIEGET™, SINDRION™, SLIC™, SMARTi™, SmartLEWIS™, SMINT™, SOCR ATES™, TEMPFET™, thinQ!™, TrueNTRY™, TriCore™, TRENCHSTOP™, VINAX™, VI NETIC™, VIONTIC™, WildPass™, X-GOLD™, XMM™, X-PMU™, XPOSYS™, XWAY™. Other Trademarks AMBA™, ARM™, MULTI- ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetoot h™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Mi crosoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorpor ated. IEC™ of Commission Electrot echnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim In tegrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO. Om niVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Micros ystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Ta iyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISH A TA. UNIX™ of X/Open Co mpany Limited. VERILOG™, PALLADIUM™ of Cadence Design Syst ems, Inc. VLYNQ™ of Texas In struments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, I NC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2009-10-19 BFP720 SiGe:C Heterojunction Wideband RF Bipolar Transistor Revision History: 2009-01-20, Revision 1.0 Previous Revision: Page Subjects (major cha nges since last revision) Converted to the new IFX Template. Business Unit, Infineon Logo and the Trademarks were changed.
Data Sheet 4 Revision 1.0, 2009-01-20 Table of Contents
Data Sheet 6 Revision 1.0, 2009-01-20 List of Tables
Product Name Package Pin Configuration Marking BFP720 SOT343 1 = B 2 = E 3 = C 4 = E R9s SiGe:C Heterojunction Wideband RF Bipolar Transistor BFP720 Data Sheet 7 Revision 1.0, 2009-01-20
1 Features
Main features:
- High performance general purpose wideband LNA transistor
- 150 GHz f T-Silicon Germanium Carbon technology
- Enables Best-In-Class performance for wireless applications due to high dynamic range
- Transistor geometry optimized for low-current applications
- Operation voltage: 1.0 V to 4.0 V
- Very high gain at high frequencies and low current consumption
- 26 dB maximum stable gain at 1.9 GHz and only 13 mA
- 15 dB maximum available gain at 10 GHz and only 13 mA
- Ultra low noise figure from latest SiGe:C technology
- 0.7 dB minimum noise figure at 5.5 GHz and 0.95 dB at 10 GHz
- High linearity OP1dB = +8.5 dBm and OIP3 = +23 dBm at 5.5 GHz and low current consumption of 13 mA
- Pb-free (RoHS compliant) package Application FM Radio, Mobile TV, RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDAR s, Bluetooth, WiFi, Cordless phone, UMTS, WLAN, UWB, LNB Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Data Sheet 8 Revision 1.0, 2009-01-20
2 Product Brief
The BFP720 is a wideband Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT) in a plastic 4-pin dual emitter SOT343 package. The device combines very high gain with lowest noise figure at low operating current for use in a wide range of wireless applications. The BFP720 is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Collector design supports operation voltages from 1.0 V to 4.0 V. Table 1 Quick Reference DC Characteristics at TA = 25°C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Collector-emitter breakdown voltage V(BR)CEO 44 . 7 –V IC =1m A , IB =0 m A Collector-base breakdown voltage V(BR)CBO 13 15 – V IE =0m A Collector current IC ––2 5 m A Total power dissipation Ptot ––1 0 0 m W TS ≤ 108 °C DC current gain hFE 160 250 400 VCE =3V , IC =1 3m A
Data Sheet 9 Revision 1.0, 2009-01-20 Table 2 Quick Reference AC Characteristics at TA = 25°C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Transition frequency fT –4 5 –G H z VCE =3V , IC =1 3m A f = 2.4 GHz Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Gms Gms –d B IC =5m A IC =1 3m A Transducer Gain Low Noise Operation Point High Linearity Operation Point S21 S21 20.5 –d B ZS = ZL =5 0 Ω IC =5m A IC =1 3m A Minimum Noise Figure Minimum Noise Figure Associated Gain NFmin Gass 0.5 21.5 –d B ZS = Zopt IC =5m A IC =5m A Linearity 1 dB Gain Compression Point 3rd Order Intercept Point OP1dB OIP3 –d B m ZS = ZL =5 0 Ω IC =1 3m A IC =1 3m A f = 5.5 GHz Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Gms Gma 19.5 –d B IC =5m A IC =1 3m A Transducer Gain Low Noise Operation Point High Linearity Operation Point S21 S21 –d B ZS = ZL =5 0 Ω IC =5m A IC =1 3m A Minimum Noise Figure Minimum Noise Figure Associated Gain NFmin Gass 0.7 –d B ZS = Zopt IC =5m A IC =5m A Linearity 1 dB Gain Compression Point 3rd Order Intercept Point OP1dB OIP3 8.5 –d B m ZS = ZL =5 0 Ω IC =1 3m A IC =1 3m A
Data Sheet 10 Revision 1.0, 2009-01-20
3 Maximum Ratings
Note: Exceeding only one of the above maximum rating limits even for a short moment may cause permanent damage to the device. Even if the device continues to operate, its lifetime may be considerably shortened. Maximum ratings are stress ratings only and do not mean unaffected functional operation and lifetime at others than standard operation conditions. Table 3 Maximum Ratings ( TA = 25 °C unless otherwise specified) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Collector-emitter voltage VCEO ––4 . 0 V – TA = -55 °C 3.5 Collector-emitter voltage VCES ––1 3 V – Collector-base voltage VCBO ––1 3 V – Emitter-base voltage VEBO ––1 . 2 V – Collector current IC ––2 5 m A – Base current IB ––2m A – Total power dissipation1) TS ≤ 108 °C 1) TS measured on the emitter lead at the soldering point of the pcb Ptot ––1 0 0 m W – Operation junction temperature TJOp -55 – 150 °C – Storage temperature TStg -55 – 150 °C –
Data Sheet 11 Revision 1.0, 2009-01-20
4 Thermal Characteristics
Figure 1 Total Power Dissipation Ptot = f (Ts) Table 4 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) 1)For calculation of RthJA please refer to Application Note Thermal Resistance RthJS 420 K/W 100 120 0 50 100 150 Ts [°C] Ptot [mW] 100 120 0 50 100 150 Ts [°C] Ptot [mW]
Electrical Characteristics
Data Sheet 13 Revision 1.0, 2009-01-20
5 Electrical Characteristics
5.1 DC Characteristics
5.2 General AC Characteristics
Table 5 DC Characteristics at TA =2 5° C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Collector-emitter breakdown voltage V(BR)CEO 44 . 7 –V IC =1m A , IB =0 m A Collector-emitter cutoff current ICES ––3 0 μA VCE =1 3V , VBE =0 V Collector-base cutoff current ICBO ––1 0 0 n A VCB =5V , IE =0 m A Emitter-base cutoff current IEBO ––2 μA VEB =0 . 5V , IC =0 m A DC current gain hFE 160 250 400 IC =1 3m A , VCE =3V pulse measured Table 6 AC Characteristics at TA =2 5° C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Transition frequency fT –4 5 –G H z IC =1 3m A , VCE =3V f =1G H z Collector-base capacitance Ccb –0 . 0 6 –p F VCB =3V , VBE =0 V f =1M H z emitter grounded Collector-emitter capacitance C ce –0 . 3 5 –p F VCE =3V , VBE =0 V f =1M H z base grounded Emitter-base capacitance C eb –0 . 3 5 –p F VEB =0 . 5V , VCB =0 V f =1M H z collector grounded
Data Sheet 14 Revision 1.0, 2009-01-20
5.3 Frequency Dependent AC Characteristics
Measurement setup is a testfixture with Bias T’s in a 50 Ω system, TA = 25 °C Figure 4 BFP720 Testing Circuit Table 7 AC Characteristics, VCE = 3 V, f =1 5 0M H z Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Gms Gms 37.5 –d B IC =5m A IC =1 3m A Transducer Gain Low Noise Operation Point High Linearity Operation Point S21 S21 29.5 –d B ZS = ZL =5 0 Ω IC =5m A IC =1 3m A Minimum Noise Figure Minimum Noise Figure Associated Gain NFmin Gass 0.4 28.5 –d B ZS = Zopt IC =5m A IC =5m A Linearity 1 dB Gain Compression Point 3rd Order Intercept Point OP1dB OIP3 –d B m ZS = ZL =5 0 Ω IC =1 3m A IC =1 3m A IN OUT Bias -T Bias-T B (Pin 1) E C E VC Top View VB
Data Sheet 15 Revision 1.0, 2009-01-20 Table 8 AC Characteristics, VCE = 3 V, f =4 5 0M H z Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Gms Gms 32.5 –d B IC =5m A IC =1 3m A Transducer Gain Low Noise Operation Point High Linearity Operation Point S21 S21 28.5 –d B ZS = ZL =5 0 Ω IC =5m A IC =1 3m A Minimum Noise Figure Minimum Noise Figure Associated Gain NFmin Gass 0.4 –d B ZS = Zopt IC =5m A IC =5m A Linearity 1 dB Gain Compression Point 3rd Order Intercept Point OP1dB OIP3 5.5 21.5 –d B m ZS = ZL =5 0 Ω IC =1 3m A IC =1 3m A Table 9 AC Characteristics, VCE = 3 V, f =9 0 0M H z Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Gms Gms 26.5 29.5 –d B IC =5m A IC =1 3m A Transducer Gain Low Noise Operation Point High Linearity Operation Point S21 S21 22.5 27.5 –d B ZS = ZL =5 0 Ω IC =5m A IC =1 3m A Minimum Noise Figure Minimum Noise Figure Associated Gain NFmin Gass 0.4 –d B ZS = Zopt IC =5m A IC =5m A Linearity 1 dB Gain Compression Point rd Order Intercept Point OP1dB OIP3 5.5 –d B m ZS = ZL =5 0 Ω IC =1 3m A IC =1 3m A
Data Sheet 16 Revision 1.0, 2009-01-20 Table 10 AC Characteristics, VCE = 3 V, f =1 5 0 0M H z Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Gms Gms 27.5 –d B IC =5m A IC =1 3m A Transducer Gain Low Noise Operation Point High Linearity Operation Point S21 S21 25.5 –d B ZS = ZL =5 0 Ω IC =5m A IC =1 3m A Minimum Noise Figure Minimum Noise Figure Associated Gain NFmin Gass 0.45 –d B ZS = Zopt IC =5m A IC =5m A Linearity 1 dB Gain Compression Point 3rd Order Intercept Point OP1dB OIP3 21.5 –d B m ZS = ZL =5 0 Ω IC =1 3m A IC =1 3m A Table 11 AC Characteristics, VCE = 3 V, f = 1.9 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Gms Gms –d B IC =5m A IC =1 3m A Transducer Gain Low Noise Operation Point High Linearity Operation Point S21 S21 21.5 24.5 –d B ZS = ZL =5 0 Ω IC =5m A IC =1 3m A Minimum Noise Figure Minimum Noise Figure Associated Gain NFmin Gass 0.45 –d B ZS = Zopt IC =5m A IC =5m A Linearity 1 dB Gain Compression Point rd Order Intercept Point OP1dB OIP3 –d B m ZS = ZL =5 0 Ω IC =1 3m A IC =1 3m A
Data Sheet 17 Revision 1.0, 2009-01-20 Table 12 AC Characteristics, VCE = 3 V, f = 2.4 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Gms Gms –d B IC =5m A IC =1 3m A Transducer Gain Low Noise Operation Point High Linearity Operation Point S21 S21 20.5 –d B ZS = ZL =5 0 Ω IC =5m A IC =1 3m A Minimum Noise Figure Minimum Noise Figure Associated Gain NFmin Gass 0.5 21.5 –d B ZS = Zopt IC =5m A IC =5m A Linearity 1 dB Gain Compression Point 3rd Order Intercept Point OP1dB OIP3 –d B m ZS = ZL =5 0 Ω IC =1 3m A IC =1 3m A Table 13 AC Characteristics, VCE = 3 V, f = 3.5 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Gms Gms 20.5 23.5 –d B IC =5m A IC =1 3m A Transducer Gain Low Noise Operation Point High Linearity Operation Point S21 S21 18.5 –d B ZS = ZL =5 0 Ω IC =5m A IC =1 3m A Minimum Noise Figure Minimum Noise Figure Associated Gain NFmin Gass 0.55 –d B ZS = Zopt IC =5m A IC =5m A Linearity 1 dB Gain Compression Point rd Order Intercept Point OP1dB OIP3 7.5 22.5 –d B m ZS = ZL =5 0 Ω IC =1 3m A IC =1 3m A
Data Sheet 18 Revision 1.0, 2009-01-20 Notes 1. G ms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1 2. In order to get the NF min values stated in this chapter the test fixture losses have been subtracted from all measured results Table 14 AC Characteristics, VCE = 3 V, f = 5.5 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Gms Gma 19.5 –d B IC =5m A IC =1 3m A Transducer Gain Low Noise Operation Point High Linearity Operation Point S21 S21 –d B ZS = ZL =5 0 Ω IC =5m A IC =1 3m A Minimum Noise Figure Minimum Noise Figure Associated Gain NFmin Gass 0.7 –d B ZS = Zopt IC =5m A IC =5m A Linearity 1 dB Gain Compression Point 3rd Order Intercept Point OP1dB OIP3 8.5 –d B m ZS = ZL =5 0 Ω IC =1 3m A IC =1 3m A Table 15 AC Characteristics, VCE = 3 V, f =1 0G H z Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Gma Gma 13.5 –d B IC =5m A IC =1 3m A Transducer Gain Low Noise Operation Point High Linearity Operation Point S21 S21 –d B ZS = ZL =5 0 Ω IC =5m A IC =1 3m A Minimum Noise Figure Minimum Noise Figure Associated Gain NFmin Gass 0.95 10.5 –d B ZS = Zopt IC =5m A IC =5m A Linearity 1 dB Gain Compression Point rd Order Intercept Point OP1dB OIP3 19.5 –d B m ZS = ZL =5 0 Ω IC =1 3m A IC =1 3m A
Data Sheet 19 Revision 1.0, 2009-01-20
5.4 Characteristic Curves
Figure 5 Transition Frequency fT = f (IC, VCE) f = 1 GHz, VCE Parameter in V Figure 6 Power Gain Gma, Gms, IS21I² = f (f) VCE = 3 V, IC = 13 mA 1 10 100 Ic [mA] fT [GHz] 0.5 V 1 V 2 V 3 V 0 1 2 3 4 5 6 7 8 9 10 f [GHz] G [dB] Gms Gma |S21|2
Data Sheet 20 Revision 1.0, 2009-01-20 Figure 7 Input Matching S11 vs. Frequency VCE = 3 V, IC = 5 mA / 13 mA Figure 8 Output Matching S22 vs. Frequency VCE = 3 V, IC = 5 mA / 13 mA 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Swp Max 10GHz Swp Min 0GHz S11 @3V, 5mA S11 @3V, 13mA
1 GHz
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 Swp Max 10GHz Swp Min 0GHz S11 @3V, 5mA S11 @3V, 13mA 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 Swp Max 10GHz Swp Min 0GHz S22 @3V, 5mA S22 @3V, 13mA
1 GHz2 GHz
1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 Swp Max 10GHz Swp Min 0GHz S22 @3V, 5mA S22 @3V, 13mA
Data Sheet 23 Revision 1.0, 2009-01-20 Figure 13 Power Gain Gma, Gms = f (VCE) IC = 13 mA, f = Parameter in GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. VCE [V] G [dB] 10.00GHz 5.50GHz 3.50GHz 2.40GHz 1.90GHz 1.50GHz 0.90GHz 0.45GHz 0.15GHz
Data Sheet 24 Revision 1.0, 2009-01-20
6 Simulation Data
For SPICE-model as well as for S-para meters including noise parameters plea se refer to our internet website: www.infineon.com/rf.models. Please consult our website and downloa d the latest versions before actually starting your design. The simulation data have been generated and verified using typical devices. The BFP720 nonlinear SPICE-model reflects the typical DC- and RF-device performance with high accuracy.
Package Information
Data Sheet 25 Revision 1.0, 2009-01-20
7 Package Information
Figure 14 Package Outline SOT343 (top / side view) Figure 15 Footprint Figure 16 Marking Example (Marking BFP720: R9s) Figure 17 Tape Dimensions SOT343-PO V08 1.25 ±0.1 0.1 MAX.2.1±0.1 0.15 +0.1 -0.050.3+0.1 2 ±0.2 ±0.10.9 A +0.10.6 AM0.2 1.3 -0.05 -0.05 0.15 0.1 M 0.10.1 MIN. 0.6 SOT343-FP V08 0.8 1.6 1.15 0.9 SOT323-TP V02 0.24 2.15 2.3 1.1Pin 1
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