BFP650F INFINEON | Alldatasheet

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Technical content

NPN Silicon Germanium RF Transistor*

  • For medium power amplifiers and driver stages
  • High OIP3 and P-1dB
  • Ideal for low phase noise oscilators
  • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz
  • 70 GHz fT- Silicon Germanium technology
  • Pb-free (RoHS compliant) package1)
  • Qualified according AEC Q101 * Short term description Direction of Unreeling Top View XYs ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP650F R5s 1=B 2=E 3=C 4=E - - TSFP-4 1Pb-containing package may be available upon special request

Parameter Symbol Value Unit Collector-emitter voltage TA > 0 °C TA ≤ 0 °C VCEO 3.7 V Collector-emitter voltage VCES 13 Collector-base voltage VCBO 13 Emitter-base voltage VEBO 1.2 Collector current IC 150 mA Base current IB 10 Total power dissipation1) TS ≤ 85°C Ptot 500 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS ≤ 130 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage I C = 3 mA, IB = 0 V(BR)CEO 4 4.5 - V Collector-emitter cutoff current VCE = 13 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 0.5 V, IC = 0 IEBO - - 10 µA DC current gain IC = 80 mA, VCE = 3 V, pulse measured hFE 110 180 270 - 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 80 mA, VCE = 3 V, f = 1 GHz fT - 42 - GHz Collector-base capacitance VCB = 3 V, f = 1 MHz, VBE = 0 , emitter grounded Ccb - 0.26 - pF Collector emitter capacitance VCE = 3 V, f = 1 MHz, VBE = 0 , base grounded Cce - 0.45 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Ceb - 1.3 - Noise figure IC = 10 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt IC = 10 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt F 0.8 1.9 dB Power gain, maximum available1) IC = 80 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz f = 6 GHz Gma 21.5 Transducer gain I C = 80 mA, VCE = 3 V, ZS = ZL = 50 Ω , f = 1.8 GHz f = 6 GHz |S21e|2 17.5 7.5 dB Third order intercept point at output2) VCE = 3 V, IC = 80 mA, f = 1.8 GHz, ZS = ZL = 50 Ω IP3 - 31 - dBm 1dB Compression point at output IC = 80 mA, VCE = 3 V, ZS = ZL = 50 Ω , f = 1.8 GHz P-1dB - 17.5 - 1Gma = |S21e / S12e| (k-(k²-1)1/2) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz

Total power dissipation Ptot = ƒ(TS) 0 15 30 45 60 75 90 105 120 135 150 100 150 200 250 300 350 400 450 500 550 TS [°C] Ptot [mW] Collector-base capacitance Ccb = ƒ (VCB) f = 1 MHz 0 1 2 3 4 5 6 7 8 9 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VCB [V] C cb [pF] Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 1 GHz 0 20 40 60 80 100 120 140 160 180 IC [mA] fT [GHz] 3.00V 2.00V 1.00V 0.50V Power gain Gma, Gms = ƒ (f) VCE = 3 V, IC = 80 mA 0 1 2 3 4 5 6 f [GHz] G [dB] G ms G ma|S21|2

Power gain Gma, Gms = ƒ (IC) VCE = 3 V f = parameter in GHz 0 20 40 60 80 100 120 140 160 180 200 IC [mA] G [dB] 6.00GHz 5.00GHz 4.00GHz 3.00GHz 2.40GHz 1.80GHz 0.90GHz Power gain Gma, Gms = ƒ (VCE) IC = 80 mA f = parameter in GHz VCE [V] G [dB] 6.00GHz 5.00GHz 4.00GHz 3.00GHz 2.40GHz 1.80GHz 0.90GHz

Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel BFP420F Type codePin 1 0.35 0.45 0.9 0.5 0.5 4 0.2 1.55 0.7 1.4 Pin 1 ±0.050.2 ±0.051.4 10˚ MAX. ±0.050.8 1.2±0.05 ±0.040.55 ±0.050.2 ±0.050.15±0.050.2 0.5±0.05 0.5±0.05 Manufacturer

81726 München, Germany

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