BFP640 INFINEON | Alldatasheet

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Technical content

NPN Silicon Germanium RF Transistor

  • High gain low noise RF transistor
  • Provides outstanding performance for a wide range of wireless applications
  • Ideal for CDMA and WLAN applications
  • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz
  • High maximum stable gain Gms = 24 dB at 1.8 GHz
  • Gold metallization for extra high reliability
  • 70 GHz fT-Silicon Germanium technology VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP640 R4s 1=B 2=E 3=C 4=E - - SOT343 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage TA > 0 °C TA ≤ 0 °C VCEO 3.7 V Collector-emitter voltage VCES 13 Collector-base voltage VCBO 13 Emitter-base voltage VEBO 1.2 Collector current IC 50 mA Base current IB 3 Total power dissipation1) TS ≤ 90°C Ptot 200 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 1TS is measured on the collector lead at the soldering point to the pcb

Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 300 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage I C = 1 mA, IB = 0 V(BR)CEO 4 4.5 - V Collector-emitter cutoff current VCE = 13 V, VBE = 0 ICES - - 30 µA Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 0.5 V, IC = 0 IEBO - - 3 µA DC current gain IC = 30 mA, VCE = 3 V, pulse measured hFE 110 180 270 - 1For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 30 mA, VCE = 3 V, f = 1 GHz fT 30 40 - GHz Collector-base capacitance VCB = 3 V, f = 1 MHz Ccb - 0.09 0.2 pF Collector emitter capacitance VCE = 3 V, f = 1 MHz Cce - 0.23 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 0.5 - Noise figure IC = 5 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt F 0.65 1.3 dB Power gain, maximum stable1) IC = 30 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gms - 24 - dB Power gain, maximum available1) IC = 30 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz Gma - 12.5 - dB Transducer gain IC = 30 mA, VCE = 3 V, ZS = ZL = 50 Ω, f = 1.8 GHz IC = 30 mA, VCE = 3 V, ZS = ZL = 50 Ω, f = 6 GHz |S21e|2 10.5 dB Third order intercept point at output2) VCE = 3 V, IC = 30 mA, f = 1.8 GHz, ZS = ZL = 50 Ω IP3 - 26.5 - dBm 1dB Compression point at output IC = 30 mA, VCE = 3 V, ZS = ZL = 50 Ω, f = 1.8 GHz P-1dB - 13 - 1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = 0.22 fA VAF = 1000 V NE = 2- VAR = 2V NC = 1.8 - RBM = 2.707 Ω CJE = 227.6 fF TF = 1.8 ps ITF = 0.4 A VJC = 0.6 V TR = 0.2 ns MJS = 0.27 - XTI = 3- AF = 2 - TITF1 -0.0065 - NF = 1.025 - ISE = 21 fA NR = 1- ISC = 400 fA IRB = 1.522 mA RC = 3.061 Ω MJE = 0.3 - VTF = 1.5 V CJC = 67.43 fF XCJC = 1- VJS = 0.6 V EG = 1.078 eV TNOM 298 K BF = 450 - IKF = 0.15 A BR = 55 - IKR = 3.8 mA RB = 3.129 Ω RE = 0.6 - VJE = 0.8 V XTF = 10 - PTF = 0 deg MJC = 0.5 - CJS = 93.4 fF XTB = -1.42 - FC = 0.8 KF = 7.291E-11 TITF2 1.0E-5 All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: /G42 /G43 /G45 /G43 /G43 /G45 /G4F /G43 /G42 /G45 /G4F /G43 /G43 /G45 /G49 /G43 /G42 /G45 /G49 /G43 /G42 /G45 /G43 /G43 /G42 /G43 /G43 /G53 /G43 /G42 /G45 /G42 /G46 /G50 /G36 /G34 /G30 /G5F /G43 /G68 /G69 /G70 /G4C /G42 /G43 /G4C /G43 /G43 /G4C /G45 /G43 /G52 /G43 /G42 /G53 /G52 /G43 /G43 /G53 /G52 /G43 /G45 /G53 /G4C /G42 /G42 /G4C /G43 /G42 /G4C /G45 /G42 /G49 /G74 /G66 /G20 /G3D /G20 /G34 /G30 /G30 /G2A /G20 /G28 /G20 /G31 /G20 /G2D /G20 /G36 /G2E /G35 /G65 /G2D /G33 /G20 /G2A /G20 /G28 /G54 /G2D /G32 /G35 /G29 /G20 /G2B /G20 /G31 /G2E /G30 /G65 /G2D /G35 /G20 /G2A /G20 /G28 /G54 /G2D /G32 /G35 /G29 /G5E /G32 /G20 /G29 /G54 /G20 /G3D /G20 /G20 /G32 /G35 /GB0 /G43 LBC = 120 pH LCC = 120 pH LEC = 20 pH LBB = 696.2 pH LCB = 682.4 pH LEB = 230.6 pH CBEC = 98.4 fF CBCC = 55.9 fF CES = 180 fF CBS = 79 fF CCS = 75 fF CCEO = 131.2 fF CBEO = 102.5 fF CCEI = 112.6 fF CBEI = 180.4 fF RBS = 1200 Ω RCS = 1200 Ω RES = 300 Ω For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes Valid up to 6GHz

Total power dissipation Ptot = ƒ(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 100 120 140 160 180 mW 220 Ptot Permissible Pulse Load RthJS = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Collector-base capacitance Ccb= ƒ(VCB) f = 1MHz 0 2 4 6 8 10 V 14 VCB 0.05 0.1 0.15 pF 0.25 CCB

Third order Intercept Point IP3=ƒ(IC) (Output, ZS=ZL=50Ω) VCE = parameter, f = 1.8 GHz 0 10 20 30 40 mA 60 IC dBm IP3 Transition frequency fT= ƒ(IC) f = 1GHz VCE = parameter 0 10 20 30 40 mA 60 IC GHz fT 0.5V Power gain Gma, Gms = ƒ(IC) VCE = 3V f = parameter 0 10 20 30 40 mA 60 IC dB G 0.9GHz 1.8GHz 2.4GHz 3GHz 4GHz 5GHz 6GHz Power Gain Gma, Gms = ƒ(f), |S21|² = f (f) VCE = 3V, IC = 30mA 0 1 2 3 4 GHz 6 f dB G Gms Gma|S21|²

Power gain Gma, Gms = ƒ (VCE) IC = 30mA f = parameter 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VCE dB G 0.9GHz 1.8GHz 2.4GHz 3GHz 4GHz 5GHz 6GHz Noise figure F = ƒ(IC) VCE = 3V, ZS = ZSopt 0 10 20 30 40 50 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.2 2.4 F [dB] Ic [mA] f = 5GHz f = 0.9GHz f = 1.8GHz f = 4GHz f = 6GHz f = 2.4GHz f = 3GHz Noise figure F = ƒ(IC) VCE = 3V, f = 1.8 GHz 0 10 20 30 40 50 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 Ic [mA] F [dB] ZS = 50Ω ZS = ZSopt Noise figure F = ƒ(f) VCE = 3V, ZS = ZSopt 0 1 2 3 4 5 6 7 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 F [dB] f [GHz] IC = 30mA IC = 5.0mA

Source impedance for min. noise figure vs. frequency VCE = 3 V, IC = 5 mA/ 30 mA −10 0.5 1.5 −0.5 −1.5 0.1 −0.1 0.2 −0.2 0.3 −0.3 0.4 −0.4 3GHz Ic = 5.0mA 1.8GHz 6GHz 5GHz 0.9GHz Ic = 30mA 4GHz 2.4GHz