BFP620FH7764 INFINEON | Alldatasheet

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Technical content

NPN Silicon Germanium RF Transistor*

  • High gain low noise RF transistor
  • Small package 1.4 x 0.8 x 0.59 mm
  • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz
  • Maximum stable gain Gms = 21 dB at 1.8 GHz Gma = 10 dB at 6 GHz
  • Gold metallization for extra high reliability
  • Pb-free (RoHS compliant) package1)
  • Qualified according AEC Q101 * Short term description Direction of Unreeling Top View XYs ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP620F R2s 1=B 2=E 3=C 4=E - - TSFP-4 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage TA > 0 °C TA ≤ 0 °C VCEO 2.3 2.1 V Collector-emitter voltage VCES 7.5 Collector-base voltage VCBO 7.5 Emitter-base voltage VEBO 1.2 Collector current IC 80 mA Base current IB 3 Total power dissipation2) TS ≤ 96°C Ptot 185 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 1Pb-containing package may be available upon special request 2TS is measured on the collector lead at the soldering point to the pcb

Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 290 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage I C = 1 mA, IB = 0 V(BR)CEO 2.3 2.8 - V Collector-emitter cutoff current VCE = 7.5 V, VBE = 0 ICES - - 10 µA Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 0.5 V, IC = 0 IEBO - - 3 µA DC current gain IC = 50 mA, VCE = 1.5 V, pulse measured hFE 110 180 270 - 1For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 50 mA, VCE = 1.5 V, f = 1 GHz fT - 65 - GHz Collector-base capacitance VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded Ccb - 0.12 0.2 pF Collector emitter capacitance VCE = 2 V, f = 1 MHz, VBE = 0 , base grounded Cce - 0.2 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Ceb - 0.45 - Noise figure IC = 5 mA, VCE = 1.5 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 1.5 V, f = 6 GHz, ZS = ZSopt F 0.7 1.3 dB Power gain, maximum stable1) IC = 50 mA, VCE = 1.5 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gms - 21 - dB Power gain, maximum available1) IC = 50 mA, VCE = 1.5 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz Gma - 10 - dB Transducer gain IC = 50 mA, VCE = 1.5 V, ZS = ZL = 50 Ω , f = 1.8 GHz f = 6 GHz |S21e|2 19.5 9.5 dB Third order intercept point at output2) VCE = 2 V, IC = 50 mA, ZS=ZL=50 Ω , f = 1.8 GHz IP3 - 25 - dBm 1dB Compression point at output IC = 50 mA, VCE = 2 V, ZS=ZL=50 Ω , f = 1.8 GHz P-1dB - 14 - 1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: IS = 0.22 fA VAF = 1000 V NE = 2- VAR = 2V NC = 2- RBM = 2.707 Ω CJE = 250.7 fF TF = 1.43 ps ITF = 2.4 A VJC = 0.6 V TR = 0.2 ns MJS = 0.5 - XTI = 3- AF = 2 - TITF1 -0.0065 - BF = 425 - IKF = 0.25 A BR = 50 - IKR = 10 mA RB = 3.129 Ω RE = 0.6 - VJE = 0.75 V XTF = 10 - PTF = 0 deg MJC = 0.5 - CJS = 128.1 fF NK = -1.42 - FC = 0.8 KF = 7.291E-11 TITF2 1.0E-5 NF = 1.025 - ISE = 21 fA NR = 1- ISC = 18 pA IRB = 1.522 mA RC = 2.364 Ω MJE = 0.3 - VTF = 1.5 V CJC = 124.9 fF XCJC = 1- VJS = 0.52 V EG = 1.078 eV TNOM 298 K All parameters are ready to use, no scalling is necessary. LE0 = 0.28 nH LC0 = 0.22 nH KB0-E0 = 0.1 - KB0-C0 = 0.01 - KE0-C0 = 0.11 - CBE = 34 fF CBC = 2 fF CCE = 33 fF LBI = 0.42 nH RLBI = 0.15 Ω LEI = 0.26 nH RLEI = 0.11 Ω LCI = 0.35 nH RLI = 0.13 Ω KBI-EI = -0.05 - KBI-CI = -0.08 - KEI-CI = 0.2 - Valid up to 6GHz To avoid high complexity of the package equivalent circuit, both emitter leads of TSFP-4 are combined in one electrical connection.RLxI are series resistors for the inductances LxI and Kxa-yb are the coupling coefficients between the inductances Lxa and Lyb.

Total power dissipation Ptot = ƒ(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 100 120 140 160 mW 200 Ptot Permissible Pulse Load RthJS = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 Ptotmax/ PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Collector-base capacitance Ccb= ƒ(VCB) f = 1MHz 0 1 2 3 4 5 6 V 8 VCB 0.05 0.1 0.15 0.2 0.25 0.3 pF 0.4 CCB

Third order Intercept Point IP3=ƒ(IC) (Output, ZS=ZL=50Ω ) VCE = parameter, f =1.8GHz 0 10 20 30 40 50 60 70 mA 90 IC dBm IP3 0.8V 1.1V 1.4V 1.7V 2.3V Transition frequency fT= ƒ(IC) f = 1GHz VCE = Parameter in V 0 10 20 30 40 50 60 70 80 mA 100 IC GHz fT 1 to 2.3 0.8 0.5 0.3 Power gain Gma, Gms = ƒ(IC) VCE = 1.5V f = Parameter in GHz 0 10 20 30 40 50 60 70 mA 90 IC dB G 0.9 1.8 2.4 Power Gain Gma, Gms = ƒ(f), |S21|² = f (f) VCE = 1.5V, IC = 50mA 0 1 2 3 4 GHz 6 f dB G Gms Gma |S21|²

Power gain Gma, Gms = ƒ (VCE) IC = 50mA f = Parameter in GHz VCE dB G 0.9 1.8 2.4 Noise figure F = ƒ(IC) VCE = 1.5V, ZS = ZSopt 0 10 20 30 40 50 60 70 80 0.5 1.5 2.5 f = 4GHz f = 2.4GHz f = 5GHz f = 0.9GHz f = 1.8GHz f = 6GHz f = 3GHz Ic [mA] F [dB] Noise figure F = ƒ(IC) VCE = 1.5V, f = 1.8 GHz 0 10 20 30 40 50 60 70 80 0.5 1.5 2.5 Ic [mA] F [dB] ZS = 50Ω ZS = ZSopt Noise figure F = ƒ(f) VCE = 1.5V, ZS = ZSopt 1 2 3 4 5 6 7 0.5 1.5 2.5 F [dB] f [GHz] IC = 50mA IC = 5.0mA

Source impedance for min. noise figure vs. frequency VCE = 1.5V, IC = 5.0mA/50.0mA 0.5 1.5 −0.5 −1.5 0.1 −0.1 0.2 −0.2 0.3 −0.3 0.4 −0.4 −10 Ic = 5.0mA 2.4GHz 3GHz 4GHz 1.8GHz Ic = 50mA 6GHz 5GHz

Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel BFP420F Type codePin 1 0.35 0.45 0.9 0.5 0.5 4 0.2 1.55 0.7 1.4 Pin 1 ±0.050.2 ±0.051.4 10˚ MAX. ±0.050.8 1.2±0.05 ±0.040.55 ±0.050.2 ±0.050.15±0.050.2 0.5±0.05 0.5±0.05 Manufacturer

81726 München, Germany

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