BFP620 INFINEON | Alldatasheet

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Technical content

NPN Silicon Germanium RF Transistor

  • High gain low noise RF transistor
  • Provides outstanding performance for a wide range of wireless applications
  • Ideal for CDMA and WLAN applications
  • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz
  • Maximum stable gain Gms = 21.5 dB at 1.8 GHz Gma = 11 dB at 6 GHz
  • Gold metallization for extra high reliability VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP620 R2s 1=B 2=E 3=C 4=E - - SOT343 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage TA > 0 °C TA ≤ 0 °C VCEO 2.3 2.1 V Collector-emitter voltage VCES 7.5 Collector-base voltage VCBO 7.5 Emitter-base voltage VEBO 1.2 Collector current IC 80 mA Base current IB 3 Total power dissipation1) TS ≤ 95°C Ptot 185 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 1TS is measured on the collector lead at the soldering point to the pcb Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 300 K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage I C = 1 mA, IB = 0 V(BR)CEO 2.3 2.8 - V Collector-emitter cutoff current VCE = 7.5 V, VBE = 0 ICES - - 10 µA Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 0.5 V, IC = 0 IEBO - - 3 µA DC current gain IC = 50 mA, VCE = 1.5 V, pulse measured hFE 110 180 270 - 1For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 50 mA, VCE = 1.5 V, f = 1 GHz fT - 65 - GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Ccb - 0.12 0.2 pF Collector emitter capacitance VCE = 2 V, f = 1 MHz Cce - 0.22 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 0.46 - Noise figure IC = 5 mA, VCE = 1.5 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 1.5 V, f = 6 GHz, ZS = ZSopt F 0.7 1.3 dB Power gain, maximum stable1) IC = 50 mA, VCE = 1.5 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gms - 21.5 - dB Power gain, maximum available1) IC = 50 mA, VCE = 1.5 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz Gma - 11 - dB Transducer gain IC = 50 mA, VCE = 1.5 V, ZS = ZL = 50 Ω, f = 1.8 GHz IC = 50 mA, VCE = 1.5 V, ZS = ZL = 50 Ω, f = 6 GHz |S21e|2 9.5 dB Third order intercept point at output2) VCE = 2 V, IC = 50 mA, f = 1.8 GHz, ZS = ZL = 50 Ω IP3 - 25 - dBm 1dB Compression point at output IC = 50 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 1.8 GHz P-1dB - 15 - 1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = 0.22 fA VAF = 1000 V NE = 2- VAR = 2V NC = 2- RBM = 2.707 Ω CJE = 250.7 fF TF = 1.43 ps ITF = 2.4 A VJC = 0.6 V TR = 0.2 ns MJS = 0.5 - XTI = 3- AF = 2 - TITF1 -0.0065 - NF = 1.025 - ISE = 21 fA NR = 1- ISC = 18 pA IRB = 1.522 mA RC = 2.364 Ω MJE = 0.3 - VTF = 1.5 V CJC = 124.9 fF XCJC = 1- VJS = 0.52 V EG = 1.078 eV TNOM 298 K BF = 425 - IKF = 0.25 A BR = 50 - IKR = 10 mA RB = 3.129 Ω RE = 0.6 - VJE = 0.75 V XTF = 10 - PTF = 0 deg MJC = 0.5 - CJS = 128.1 fF NK = -1.42 - FC = 0.8 KF = 7.291E-11 TITF2 1.0E-5 All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: /G42 /G43 /G45 /G43 /G43 /G45 /G4F /G43 /G42 /G45 /G4F /G43 /G43 /G45 /G49 /G43 /G42 /G45 /G49 /G43 /G42 /G45 /G43 /G43 /G42 /G43 /G43 /G53 /G43 /G42 /G45 /G42 /G46 /G50 /G36 /G32 /G30 /G5F /G43 /G68 /G69 /G70 /G4C /G42 /G43 /G4C /G43 /G43 /G4C /G45 /G43 /G52 /G43 /G42 /G53 /G52 /G43 /G43 /G53 /G52 /G43 /G45 /G53 /G4C /G42 /G42 /G4C /G43 /G42 /G4C /G45 /G42 /G49 /G74 /G66 /G20 /G3D /G20 /G32 /G34 /G30 /G30 /G2A /G20 /G28 /G20 /G31 /G20 /G2D /G20 /G36 /G2E /G35 /G65 /G2D /G33 /G20 /G2A /G20 /G28 /G54 /G2D /G32 /G35 /G29 /G20 /G2B /G20 /G31 /G2E /G30 /G65 /G2D /G35 /G20 /G2A /G20 /G28 /G54 /G2D /G32 /G35 /G29 /G5E /G32 /G20 /G29 /G54 /G20 /G3D /G20 /G20 /G32 /G35 /GB0 /G43 LBC = 60 pH LCC = 50 pH LEC = 15 pH LBB = 764.5 pH LCB = 725.4 pH LEB = 259.6 pH CBEC = 98.4 fF CBCC = 55.9 fF CES = 140 fF CBS = 54 fF CCS = 50 fF CCEO = 106.5 fF CBEO = 106.7 fF CCEI = 132.4 fF CBEI = 99.6 fF RBS = 1200 Ω RCS = 1200 Ω RES = 300 Ω For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes Valid up to 6GHz

Total power dissipation Ptot = ƒ(TS) 0 20 40 60 80 100 120 °C 150 TS 100 120 140 160 mW 200 Ptot Permissible Pulse Load RthJS = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 °C tp 1 10 2 10 3 10 K/WRthJS D = 0.5 0.2 0.1 0.05 0.02 0.01 0.005 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 °C tp 0 10 1 10 Ptotmax/ PtotDC D = 0 0.005 0,01 0,02 0,05 0,1 0,2 0,5 Collector-base capacitance Ccb= ƒ(VCB) f = 1MHz 0 1 2 3 4 5 V 7 VCB 0.05 0.1 0.15 0.2 0.25 0.3 pF 0.4 CCB

Third order Intercept Point IP3=ƒ(IC) (Output, ZS=ZL=50Ω) VCE = parameter, f = 900MHz - 0 10 20 30 40 50 60 70 80 mA 100 IC dBm IP3 0.8V 1.3V 1.8V 2.3V Transition frequency fT= ƒ(IC) f = 1GHz VCE = Parameter in V 0 10 20 30 40 50 60 70 80 mA 100 IC GHz fT 0.3 0.5 0.8 1.3 to 2.3 Power gain Gma, Gms = ƒ(IC) VCE = 1.5V f = Parameter in GHz 0 10 20 30 40 50 60 70 mA 90 IC dB G 0.9 1.8 2.4 Power Gain Gma, Gms = ƒ(f), |S21|² = f (f) VCE = 1.5V, IC = 50mA 0 1 2 3 4 GHz 6 f dB G |S21|² Gms Gma

Power gain Gma, Gms = ƒ (VCE) IC = 50mA f = Parameter in GHz VCE dB G 0.9 1.8 2.4