BFP540ESD

BFP540ESD_09 INFINEON | Alldatasheet

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Technical content

NPN Silicon RF Transistor*

• For ESD protected high gain low noise amplifier
• Excellent ESD performance typical value 1000 V (HBM)
• Outstanding Gms = 21.5 dB Noise Figure F = 0.9 dB
• Gold metallization for high reliability
• SIEGET  45 - Line
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101 * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP540ESD AUs 1=B 2=E 3=C 4=E - - SOT343 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage TA > 0°C TA ≤ 0°C VCEO 4.5 V Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 1 Collector current IC 80 mA Base current IB 8 Total power dissipation2) TS ≤ 77°C Ptot 250 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 1Pb-containing package may be available upon special request 2TS is measured on the collector lead at the soldering point to the pcb

Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 290 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage I C = 1 mA, IB = 0 V(BR)CEO 4.5 5 - V Collector-emitter cutoff current VCE = 10 V, VBE = 0 ICES - - 10 µA Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 0.5 V, IC = 0 IEBO - - 10 µA DC current gain IC = 20 mA, VCE = 3.5 V, pulse measured hFE 50 110 170 - 1For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 50 mA, VCE = 4 V, f = 1 GHz fT 21 30 - GHz Collector-base capacitance VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded Ccb - 0.14 0.24 pF Collector emitter capacitance VCE = 2 V, f = 1 MHz, VBE = 0 , base grounded Cce - 0.41 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Ceb - 0.59 - Noise figure IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt F 0.9 1.3 1.4 dB Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gms - 21.5 - dB Power gain, maximum available1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 3 GHz Gma - 16 - dB Transducer gain IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 3GHz |S21e|2 18.5 dB Third order intercept point at output2) VCE = 2 V, IC = 20 mA, ZS = ZL = 50Ω, f = 1.8GHz IP3 - 24.5 - dBm 1dB Compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz P-1dB - 11 - 1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz

For SPICE-model as well as for S-parameters including noise parameters refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest version before actually starting your design. The simulation data have been generated and verified up to 8 GHz using typical devices. The BFP540ESD nonlinear SPICE-model reflects the typical DC- and RF-device performance with high accuracy.

Total power dissipation Ptot = ƒ(TS) 0 25 50 75 100 125 150 100 150 200 250 300 TS [°C] Ptot [mW] Permissible Pulse Load RthJS = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 Ptotmax/ PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Collector-base capacitance Ccb = ƒ (VCB) f = 1 MHz 0 2 4 6 8 10 12 14 0.05 0.1 0.15 0.2 0.25 0.3 VCB [V] Ccb [pF]

Third order Intercept Point IP3 = ƒ (IC) (Output, ZS = ZL = 50 Ω ) VCE = parameter, f = 900 MHz 0 10 20 30 40 50 60 70 80 IC [mA] IP3 [dBm] 1.00V 1.50V 2.00V 3.00V 4.00V Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz 0 10 20 30 40 50 60 70 80 90 100 IC [mA] fT [GHz] 3 − 4.5V 2.00V 1.00V 0.75V 0.50V Power gain Gma, Gms = ƒ (f) VCE = 3 V, IC = 25 mA 0 1 2 3 4 5 6 f [GHz] G [dB] Gms Gma |S21|2 Power gain Gma, Gms = ƒ (IC) VCE = 3 V f = parameter in GHz 0 10 20 30 40 50 60 70 80 90 100 IC [mA] G [dB] 6.00GHz 5.00GHz 4.00GHz 3.00GHz 2.40GHz 1.80GHz 0.90GHz

Power gain Gma, Gms = ƒ (VCE) IC = 20 mA f = parameter in GHz 0 1 2 3 4 5 6 VCE [V] G [dB] 6.00GHz 5.00GHz 4.00GHz 3.00GHz 2.40GHz 1.80GHz 0.90GHz Noise figure F = ƒ(IC) VCE = 3 V, f = parameter in GHz ZS = ZSopt 0 10 20 30 40 50 60 70 80 0.5 1.5 2.5 3.5 4.5 f = 3GHz f = 5GHz f = 0.9GHz f = 4GHz f = 6GHz f = 1.8GHz Ic [mA] F [dB] Noise figure F = ƒ(IC) VCE = 3V, f = 1.8 GHz 0 10 20 30 40 50 60 70 80 0.5 1.5 2.5 3.5 4.5 Ic [mA] F [dB] ZS = 50Ω ZS = ZSopt Noise figure F = ƒ(f) VCE = 3 V, ZS = ZSopt 0 1 2 3 4 5 6 7 0.4 0.6 0.8 1.2 1.4 1.6 1.8 F [dB] f [GHz] IC = 20mA IC = 5.0mA

Source impedance for min. noise figure vs. frequency VCE = 3 V, IC = 5 mA / 20 mA −10 0.5 1.5 −0.5 −1.5 0.1 −0.1 0.2 −0.2 0.3 −0.3 0.4 −0.4 3GHz Ic = 5.0mA 1.8GHz 6GHz 5GHz 0.9GHz Ic = 20mA 4GHz 2.4GHz

Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 2005, June Date code (YM) BGA420 Type code 0.24 2.15 2.3 1.1Pin 1 0.6 0.8 1.6 1.15 0.9 1.25 ±0.1 0.1 MAX. 2.1±0.1 0.15 +0.1 -0.050.3 +0.1 2±0.2 ±0.10.9 A +0.10.6 AM0.2 1.3 -0.05 -0.05 0.15 0.1 M 0.10.1 MIN. Pin 1 Manufacturer

81726 Munich, Germany

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