BFP540

BFP540 INFINEON | Alldatasheet

Document overview

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Technical content

• For highest gain low noise amplifier at 1.8 GHz
• Outstanding Gms = 21 dB Noise Figure F = 0.9 dB
• Gold metallization for high reliability
• SIEGET 45 - Line VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP540 ATs 1=B 2=E 3=C 4=E - - SOT343 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 4.5 V Collector-emitter voltage VCES 14 Collector-base voltage VCBO 14 Emitter-base voltage VEBO 1 Collector current IC 80 mA Base current IB 8 Total power dissipation1) TS ≤ 77°C Ptot 250 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS ≤ 290 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage I C = 1 mA, IB = 0 V(BR)CEO 4.5 5 - V Collector-emitter cutoff current VCE = 14 V, VBE = 0 ICES - - 10 µA Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 0.5 V, IC = 0 IEBO - - 10 µA DC current gain IC = 20 mA, VCE = 3.5 V hFE 50 110 200 -

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 50 mA, VCE = 4 V, f = 1 GHz fT 21 30 - GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Ccb - 0.14 0.24 pF Collector emitter capacitance VCE = 2 V, f = 1 MHz Cce - 0.33 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 0.65 - Noise figure IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt F 0.9 1.3 1.4 dB Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gms - 21.5 - dB Power gain, maximum available1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 3 GHz Gma - 16 - dB Transducer gain IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 1.8 GHz IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 3 GHz |S21e|2 18.5 14.5 dB Third order intercept point at output2) VCE = 2 V, IC = 20 mA, f = 1.8 GHz, ZS = ZL = 50 Ω IP3 - 24.5 - dBm 1dB Compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 1.8 GHz P-1dB - 11 - 1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = 82.84 aA VAF = 28.383 V NE = 3.19 - VAR = 19.705 V NC = 1.172 - RBM = 1.3 Ω CJE = 1.8063 fF TF = 6.76 ps ITF = 1m A VJC = 0.81969 V TR = 2.324 ns MJS = 0- XTI = 3- NF = 1- ISE = 11.15 fA NR = 1- ISC = 19.237 aA IRB = 0.72983 mA RC = 4 Ω MJE = 0.46576 - VTF = 0.23794 V CJC = 234 fF XCJC = 0.3 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K BF = 107.5 - IKF = 0.48731 A BR = 5.5 - IKR = 0.02 A RB = 5.4 Ω RE = 0.31111 - VJE = 0.8051 V XTF = 0.4219 - PTF = 0 deg MJC = 0.30232 - CJS = 0 fF XTB = 0 - FC = 0.73234 All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: LBI = 0.47 nH LBO = 0.53 nH LEI = 0.23 nH LEO = 0.05 nH LCI = 0.56 pH LEO = 0.58 nH CBE = 136 fF CCB = 6.9 fF CCE = 134 fF For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes Valid up to 6GHzFor non-linear simulation:

• Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
• Simulation of the package is not necessary for frequencies < 100MHz. For higher frequencies please add the wiring of the package equivalent circuit around the non-linear transistor.

Total power dissipation Ptot = ƒ(TS) 0 20 40 60 80 100 120 °C 150 TS 100 150 200 mW 300 Ptot Permissible Pulse Load RthJS = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 Ptotmax/ PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Collector-base capacitance Ccb= ƒ(VCB) f = 1MHz 0 0.5 1 1.5 2 2.5 3 V 4 VCB 0.05 0.1 pF 0.2 Ccb

Transition frequency fT= ƒ(IC) f = 1GHz VCE = Parameter in V 0 10 20 30 40 50 60 70 mA 90 IC GHz fT 0.5 1.5 Power gain Gma, Gms = ƒ(IC) VCE = 2V f = Parameter in GHz 0 10 20 30 40 50 60 70 mA 90 IC dB G Power Gain Gma, Gms = ƒ(f), |S21|² = f (f) VCE = 2V, IC = 20mA 0 1 2 3 4 GHz 6 G dB IC |S21|² Gms Gma Power gain Gma, Gms = ƒ (VCE) IC = 20mA f = Parameter in GHz 0 0.5 1 1.5 2 2.5 3 V 4 VCE dB G

Noise figure F = ƒ(IC) VCE = 2V, ZS = ZSopt 0 10 20 30 40 50 60 mA 80 IC 0.5 1.5 2.5 dB F f = 6GHz f = 5GHz f = 4GHz f = 3GHz f = 2.4GHz f = 1.8GHz f = 0.9GHz Noise figure F = ƒ(IC) VCE = 2V, f = 1.8GHz 0 10 20 30 40 50 60 mA 80 IC 0.5 1.5 2.5 dB F ZS = 50Ohm ZS = Zsopt Noise figure F = ƒ(f) VCE = 2V, ZS = ZSopt 0 1 2 3 4 GHz 6 f 0.5 1.5 dB F IC = 20mA IC = 5mA Source impedance for min. noise figure vs. frequency VCE = 2V, IC = 5mA / 20mA 100 +j10 -j10 +j25 -j25 +j50 -j50 +j100 -j100 0.9GHz1.8GHz2.4GHz 3GHz 4GHz 5GHz 6GHz 5mA 20mA