BFP520F INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

/G01 For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB /G01 For oscillators up to 15 GHz /G01 Transition frequency fT = 45 GHz /G01 Gold metallization for high reliability /G01 SIEGET /G01 45 - Line

45 GHz fT - Line

/G41/G50/G73 /G31 /G32 /G33 /G34 /G64/G69 /G72 /G65 /G63 /G74 /G69 /G6F /G6E/G20 /G6F/G66 /G20 /G75/G6E/G72 /G65/G65/G6C /G69 /G6E /G67 /G74 /G6F/G70/G20 /G76 /G69 /G65/G77 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP520F APs 1 = B 2 = E 3 = C 4 = E TSFP-4 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 2.5 V Collector-base voltage VCBO 10 Emitter-base voltage VEBO 1 Collector current IC 40 mA Base current IB 4 Total power dissipation TS /G01 107°C Ptot 100 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS /G01 430 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 2.5 3 3.5 V Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 200 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 35 µA DC current gain IC = 20 mA, VCE = 2 V hFE 70 110 200 - AC characteristics (verified by random sampling) Transition frequency IC = 30 mA, VCE = 2 V, f = 2 GHz fT - 45 - GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Ccb - 0.07 - pF Collector-emitter capacitance VCE = 2 V, f = 1 MHz Cce - 0.25 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 0.31 - Noise figure IC = 2 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz F - 0.95 - dB Power gain, maximum stable 1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gms - 23 - Insertion power gain IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50/G01 |S21|2 - 20.5 - dB Third order intercept point at output2) VCE = 2 V, f = 1.8 GHz, ZS=ZL=50/G01 , IC = 20 mA IP3 - 23.5 - dBm 1dB compression point3) VCE = 2 V, f = 1.8 GHz, ZS=ZL=50/G01 , IC = 20 mA P-1dB - 10.5 - 1Gms = |S21 / S12| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50/G01 from 0.1MHz to 6GHz. 3DC current at no input power

SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 15 aA VAF = 25 V NE = 2 - VAR = 2V NC = 2 - RBM = 7.5 /G01 CJE = 235 fF TF = 1.7 ps ITF = 0.7 mA VJC = 0.661 V TR = 50 ns MJS = 0.333 - XTI = 0.035 - BF = 235 - IKF = 0.4 A BR = 1.5 - IKR = 0.01 A RB = 11 /G01 RE = 0.6 VJE = 0.958 V XTF = 10 - PTF = 50 deg MJC = 0.236 - CJS = 0f F XTB = -0.25 - FC = 0.5 - NF = 1 - ISE = 25 fA NR = 1 - ISC = 20 fA IRB = -A RC = 7.6 /G01 MJE = 0.335 - VTF = 5V CJC = 93 fF XCJC = 1 - VJS = 0.75 V EG = 1.11 eV TNOM 298 K Package Equivalent Circuit: LBO = 0.22 nH LEO = 0.28 nH LCO = 0.22 nH KBO-EO = 0.10 - KBO-CO = 0.01 - KEO-CO = 0.11 - C BE = 34 fF CBC = 2 fF C CE = 33 fF LBI = 0.42 nH RLBI = 0.15 /G02 LEI = 0.26 nH RLEI = 0.11 /G02 LCI = 0.35 nH RLCI = 0.13 /G02 KCI-EI = -0.05 - KBI-CI = -0.08 - KBI-EI = 0.20 - Valid up to 6GHz The TSFP-4 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. RLxI are series resistors for the inductances LxI and Kxa-yb are the coupling coefficients between the inductances Lxa and Lyb. The referencepins for the coupled ports are B, E, C, B\, E\, C\`. For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes