BFP520 SIEMENS | Alldatasheet

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Semiconductor Group Sep-09-19981 SIEGET â 45 NPN Silicon RF Transistor Preliminary data

  • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding G a = 20 dB Noise Figure F = 0.95 dB
  • For oscillators up to 15 GHz
  • Transition frequency fT = 45 GHz
  • Gold metalization for high reliability
  • SIEGET â 45 - Line Siemens G rounded Emitter Transistor

45 GHz fT - Line

ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 520 APs Q62702-F1794 1 = B 2 = E 3 = C 4 = E SOT-343 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 2.5 V Collector-base voltage VCBO 12 V Emitter-base voltage VEBO 1 V Collector current IC 40 mA Base current IB 4 mA Total power dissipation, TS £ 105 °C Ptot 100 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ...+150 °C Storage temperature Tstg -65 ...+150 °C Thermal Resistance Junction - soldering point 1) RthJS £ 450 K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group 1 1998-11-01

Semiconductor Group Sep-09-19982 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 2.5 3 3.5 V Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 200 nA Emitter-base cutoff current VEB = 1.5 V, IC = 0 IEBO - - 35 nA DC current gain IC = 20 mA, VCE = 4 V hFE 50 80 150 - AC characteristics - GHz- 45fTTransition frequency IC = 30 mA, VCE = 2 V, f = 2 GHz - pF0.06-C cbCollector-base capacitance VCB = 2 V, f = 1 MHz - pFC ce 0.3-Collector-emitter capacitance VCE = 2 V, f = 1 MHz -Emitter-base capacitance VEB = 0.5 V, f = 1 MHz pFC eb 0.35- -F -Noise figure IC = 2 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz dB0.95 - dB23-G msPower gain 1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz - dB|S21|2Insertion power gain IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50W 21- Third order intercept point at output VCE = 2 V, f = 1.8 GHz, ZS =ZSopt, ZL=ZLopt , IC = 20 mA IC = 7 mA dBmIP3 1dB compression point VCE = 2 V, f = 1.8 GHz, ZS =ZSopt, ZL=ZLopt , IC = 20 mA IC = 7 mA dBm P-1dB Semiconductor Group 2 1998-11-01

Semiconductor Group Sep-09-19983 Common Emitter S-Parameters f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG VCE = 2 V, /C = 20 mA 0.01 0.1 0.5 0.7244 0.7251 0.6368 0.4768 0.2816 0.225 0.2552 0.3207 0.3675 -0.7 -8.4 -40.7 -73.6 -123.8 -166 156.2 133.6 118.7 32.273 31.637 27.293 19.6 11.02 7.48 5.636 4.488 3.683 178.6 171.4 140.7 113.5 84.9 67.6 39.7 27.5 0.0007 0.0041 0.0194 0.0351 0.00574 0.0788 0.0994 0.1177 0.1343 69.4 92.8 75.9 66.5 56.3 49.2 41.5 32.9 24.7 0.9052 0.9363 0.8523 0.6496 0.3818 0.2407 0.1544 0.095 0.0545 1.2 -4.4 -26.7 -46 -64.6 -73.6 -95.3 -128.9 177.6 Common Emitter Noise Parameters f Fmin 1) G a 1) Gopt R N rn F50W 2) |S21|2 2) GHz dB dB MAG ANG W - dB dB V CE = 2 V, IC = 2 mA 0.9 1.8 2.4 0.72 0.95 1.07 1.3 1.35 1.7 1.95 21.5 14.5 11.6 9.5 0.64 0.49 0.45 0.4 0.26 0.14 0.12 128 151 21.5 16.5 12.5 0.43 0.38 0.36 0.33 0.25 0.18 0.16 1.75 1.55 1.6 1.7 1.6 1.85 1.95 16.1 15.14 14.07 13.13 11.49 9.87 8.28 V CE = 2 V, IC = 5 mA 0.9 1.8 2.4 0.89 1.08 1.12 1.32 1.35 1.6 1.8 20.5 16.2 13.5 11.5 10.5 0.49 0.38 0.34 0.29 0.156 0.08 0.07 120 150 13.5 0.32 0.28 0.28 0.27 0.22 0.2 0.16 1.5 1.38 1.4 1.5 1.45 1.65 1.8 21.94 19.34 17.54 16.01 13.82 11.93 10.23 1) Input matched for minimum noise figure, output for maximum gain 2) ZS = ZL = 50W For more and detailed S- and Noise-parameters please contact your local Siemens distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 3 1998-11-01

Semiconductor Group Sep-09-19984 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = tbd aA VAF = tbd V NE = tbd - VAR = tbd V NC = tbd - RBM = tbd W CJE = tbd fF TF = tbd ps ITF = tbd mA VJC = tbd V TR = tbd ns MJS = tbd - XTI = tbd - BF = tbd - IKF = tbd A BR = tbd - IKR = tbd A RB = tbd W RE = tbd W VJE = tbd V XTF = tbd - PTF = tbd deg MJC = tbd - CJS = tbd fF XTB = tbd - FC = tbd - NF = tbd - ISE = tbd fA NR = tbd - ISC = tbd fA IRB = tbd mA RC = tbd W MJE = tbd - VTF = tbd V CJC = tbd fF XCJC = tbd - VJS = tbd V EG = tbd eV TNOM tbd K C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) : IS = tbd fA RS = tbd WN = tbd - All parameters are ready to use, no scalling is necessary Package Equivalent Circuit: LBI = 0.47 nH LBO = 0.53 nH LEI = 0.23 nH LEO = 0.05 nH LCI = 0.56 nH LCO = 0.58 nH C BE = 136 fF C CB = 6.9 fF C CE = 134 fF EHA07389 L BI BEC BOL C EIL L EO CBC CIL COL CEC Transistor C'-E'- B Diode E C'B' Chip Valid up to 6GHz The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitentechnik (IMST) Ó 1996 SIEMENS AG For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 1998-11-01

Semiconductor Group Sep-09-19985 For non-linear simulation:

  • Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
  • If you need simulation of thereverse characteristics, add the diode with the C'-E'- diode data between collector and emitter.
  • Simulation of package is not necessary for frequenties < 100MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note:
  • This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. EHA07307 C EE B Transistor Schematic Diagram The common emitter configuration shows the following advantages:
  • Higher gain because of lower emitter inductance.
  • Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. The AC characteristics are verified by random sampling. Semiconductor Group 5 1998-11-01

Semiconductor Group Sep-09-19986 Total power dissipation P tot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA,TS 100 mW 120 P tot TS TA Transition frequency fT = f (IC ) f = 2 GHz VCE = parameter in V 0 5 10 15 20 25 30 35 mA 45 IC GHz fT 0.75 0.5 Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 Pmax/ PDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load R thJS = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Semiconductor Group 6 1998-11-01

Semiconductor Group Sep-09-19987 Power gain G ma , G ms , |S 21|2 = f ( f ) VCE = 2V, IC = 20 mA f dB G G ms G ma |S21|2 Power gain G ma , G ms = f (IC) VCE = 2V f = parameter in GHz 0 5 10 15 20 25 30 35 mA 45 IC dB G 0.9 1.8 2.4 Power gain G ma , G ms = f (V CE ) IC = 20 mA f = parameter in GHz VCE dB G 0.9 1.8 2.4 Collector-base capacitance C cb = f (VCB ) VBE = 0, f = 1MHz VCB 0.00 0.05 0.10 0.15 0.20 0.25 pF 0.35 C cb Semiconductor Group 7 1998-11-01

Semiconductor Group Sep-09-19988 Noise figure F = f (IC ) VCE = 2 V, f = 1.8 GHz 0 5 10 15 20 25 30 mA 40 IC 0.0 0.5 1.0 1.5 2.0 dB 3.0 F Zs = 50Ohm Zs = Zsopt Noise figure F = f (IC ) VCE = 2 V, ZS = ZSopt 0 5 10 15 20 25 30 mA 40 IC 0.0 0.5 1.0 1.5 2.0 dB 3.0 F f = 6 GHz f = 5 GHz f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz Noise figure F = f ( f ) VCE = 2 V, ZS = ZSopt f 0.0 0.5 1.0 1.5 2.0 dB 3.0 F IC = 5 mA IC = 2 mA Source impedance for min. Noise Figuren vers. Frequency VCE = 2 V, IC = 2 mA / 5 mA 100 +j10 -j10 +j25 -j25 +j50 -j50 +j100 -j100 3GHz 4GHz 5GHz 6GHz 0.45GHz 0.9GHz 1.8GHz 2mA 5mA Semiconductor Group 8 1998-11-01