BFP520

BFP520 INFINEON | Alldatasheet

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/G01 For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB /G01 For oscillators up to 15 GHz /G01 Transition frequency fT = 45 GHz /G01 Gold metallization for high reliability /G01 SIEGET /G01 45 - Line

45 GHz fT - Line

ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP520 APs 1 = B 2 = E 3 = C 4 = E SOT343 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 2.5 V Collector-base voltage VCBO 10 Emitter-base voltage VEBO 1 Collector current IC 40 mA Base current IB 4 Total power dissipation TS /G01/G02 105 °C 1) Ptot 100 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point2) RthJS /G01 450 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 2.5 3 3.5 V Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 200 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 35 µA DC current gain IC = 20 mA, VCE = 2 V hFE 70 110 200 - AC characteristics (verified by random sampling) Transition frequency IC = 30 mA, VCE = 2 V, f = 2 GHz fT - 45 - GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Ccb - 0.06 - pF Collector-emitter capacitance VCE = 2 V, f = 1 MHz Cce - 0.3 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 0.35 - Noise figure IC = 2 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz F - 0.95 - dB Power gain, maximum stable 1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gms - 23 - Insertion power gain IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50/G01 |S21|2 - 21 - dB Third order intercept point at output VCE = 2 V, f = 1.8 GHz, ZS=ZSopt, ZL=ZLopt , IC = 20 mA IC = 7 mA IP3 dBm 1dB compression point VCE = 2 V, f = 1.8 GHz, ZS=ZSopt, ZL=ZLopt , IC = 20 mA IC = 7 mA P-1dB 1Gms = |S21 / S12|

Common Emitter S-Parameters f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG VCE = 2 V, /C = 20 mA 0.01 0.1 0.5 0.7244 0.7251 0.6368 0.4768 0.2816 0.2251 0.2552 0.3207 0.3675 -0.7 -8.4 -40.7 -73.6 -123.8 -166.1 156.2 133.6 118.7 32.273 31.637 27.293 19.601 11.021 7.481 5.636 4.488 3.683 178.6 171.4 140.7 113.5 84.9 67.6 53.1 39.7 27.5 0.0007 0.0041 0.0194 0.0351 0.0057 0.0788 0.0994 0.1177 0.1343 69.4 92.8 75.9 66.5 56.3 49.2 41.5 32.9 24.7 0.9052 0.9363 0.8523 0.6496 0.3818 0.2407 0.1544 0.0951 0.0545 1.2 -4.4 -26.7 -46.1 -64.6 -73.6 -95.3 -128.9 177.6 Common Emitter Noise Parameters f Fmin 1) Ga 1) Γopt RN rn F50/G01/G02/G02 2) |S21|2 2) GHz dB dB MAG ANG /G01 - dB dB VCE = 2 V, IC = 2 mA 0.9 1.8 2.4 0.72 0.95 1.07 1.31 1.35 1.71 1.95 21.5 20.1 16.1 14.5 11.6 9.5 8.1 0.64 0.49 0.45 0.41 0.26 0.14 0.12 128 151 21.5 19.1 18.1 16.5 12.5 9.1 8.1 0.43 0.38 0.36 0.33 0.25 0.18 0.16 1.75 1.55 1.61 1.71 1.61 1.85 1.95 16.11 15.14 14.07 13.13 11.49 9.87 8.28 VCE = 2 V, IC = 5 mA 0.9 1.8 2.4 0.89 1.08 1.12 1.32 1.35 1.61 1.81 22.1 20.5 18.1 16.2 13.5 11.5 10.5 0.49 0.38 0.34 0.29 0.16 0.08 0.07 120 150 16.1 14.1 14.1 13.5 11.1 10.1 8.1 0.32 0.28 0.28 0.27 0.22 0.21 0.16 1.51 1.38 1.41 1.51 1.45 1.65 1.81 21.94 19.34 17.54 16.01 13.82 11.93 10.23 1) Input matched for minimum noise figure, output for maximum gain 2) ZS = ZL = 50/G01 For more and detailed S- and Noise-parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies Application Notes CD-ROM or see Internet: http://www.infineon.com/silicondiscretes

SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 15 aA VAF = 25 V NE = 2- VAR = 2V NC = 2- RBM = 7.5 /G02 CJE = 235 fF TF = 1.7 ps ITF = 0.7 A VJC = 0.661 V TR = 50 ns MJS = 0.333 - XTI = 0.035 - BF = 235 - IKF = 0.4 A BR = 1.5 - IKR = 0.01 A RB = 11 /G01 RE = 0.6 VJE = 0.958 V XTF = 10 - PTF = 50 deg MJC = 0.236 - CJS = 0f F XTB = -0.25 - FC = 0.5 - NF = 1 - ISE = 25 fA NR = 1- ISC = 20 fA IRB = -A RC = 7.6 /G01 MJE = 0.335 - VTF = 5V CJC = 93 fF XCJC = 1- VJS = 0.75 V EG = 1.11 eV TNOM 298 K Package Equivalent Circuit: LBI = 0.47 nH LBO = 0.53 nH LEI = 0.23 nH LEO = 0.05 nH LCI = 0.56 nH LCO = 0.58 nH CBE = 136 fF CCB = 6.9 fF CCE = 134 fF Valid up to 6GHz The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes

For non-linear simulation: /G03 Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. /G03 Simulation of the package is not necessary for frequencies < 100MHz. For higher frequencies please add the wiring of the package equivalent circuit around the non-linear transistor. Advantages of the common emitter configuration: /G03 Higher gain because of lower emitter inductance. /G03 Power is dissipated via the grounded emitter leads, because the chip is mounted on the copper emitter leadframe. Please note, that the broadest lead is the emitter lead.

Total power dissipation Ptot = f (TS ) 0 20 40 60 80 100 120 °C 150 TS 100 mW 120 P tot Transition frequency fT = f (IC) f = 2 GHz VCE = parameter in V 0 5 10 15 20 25 30 35 mA 45 IC GHz fT 0.75 0.5 Permissible Pulse Load P totmax/P totDC = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 Ptotmax / PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load R thJS = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0

Power gain Gma, Gms, |S21|2 = f ( f ) VCE = 2V, IC = 20 mA f dB G G ms G ma |S21|2 Power gain Gma, Gms = f (IC) VCE = 2V f = parameter in GHz 0 5 10 15 20 25 30 35 mA 45 IC dB G 0.9 1.8 2.4 Power gain Gma, Gms = f (VCE) IC = 20 mA f = parameter in GHz VCE dB G 0.9 1.8 2.4 Collector-base capacitance C cb = f (VCB ) f = 1MHz VCB 0.00 0.05 0.10 0.15 0.20 pF 0.30 C cb

Noise figure F = f (IC) VCE = 2 V, f = 1.8 GHz 0 5 10 15 20 25 30 mA 40 IC 0.0 0.5 1.0 1.5 2.0 dB 3.0 F Zs = 50Ohm Zs = Zsopt Noise figure F = f (IC) VCE = 2 V, ZS = ZSopt 0 5 10 15 20 25 30 mA 40 IC 0.0 0.5 1.0 1.5 2.0 dB 3.0 F f = 6 GHz f = 5 GHz f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz Noise figure F = f ( f ) VCE = 2 V, ZS = ZSopt f 0.0 0.5 1.0 1.5 2.0 dB 3.0 F IC = 5 mA IC = 2 mA Source impedance for min. noise figure vs. Frequency VCE = 2 V, IC = 2 mA / 5 mA 100 +j10 -j10 +j25 -j25 +j50 -j50 +j100 -j100 3GHz 4GHz 5GHz 6GHz 0.45GHz 0.9GHz 1.8GHz 2mA 5mA