BFP490 SIEMENS | Alldatasheet

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Semiconductor Group Sep-09-19981 SIEGET â 25 NPN Silicon RF Transistor Preliminary data

  • For high power amplifiers
  • Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain G ma = 9.5 dB at 1.8 GHz
  • Transition frequency fT > 17 GHz
  • Gold metalization for high reliability
  • SIEGET â 25 - Line Siemens G rounded Emitter Transistor

25 GHz fT - Line

ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 490 AOs Q62702-F1721 1 = B 2 = E 3 = C 4 = C SCT-5955 = E Maximum Ratings Parameter Symbol UnitValue VCollector-emitter voltage 4.5VCEO Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 600 mA Base current IB 60 Total power dissipation, TS £ 85 °C Ptot 1000 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ...+150 Storage temperature Tstg -65 ...+150 Thermal Resistance Junction - soldering point 1) R thJS £ 65 K/W 1) TS is measured on the emitter lead at the soldering point mounted on alumina 15 mm x 16,7 mm x 0.7 mm Semiconductor Group 1 1998-11-01

Semiconductor Group Sep-09-19982 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 4.5 5 - V Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 1800 nA Emitter-base cutoff current VEB = 1.5 V, IC = 0 IEBO - - 400 µA DC current gain IC = 200 mA, V CE = 3 V hFE 50 90 - - AC characteristics Transition frequency IC = 300 mA, VCE = 3 V, f = 0.2 GHz IC = 300 mA, VCE = 3 V, f = 0.5 GHz fT 17.5 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Ccb - 3.7 4.7 pF Collector-emitter capacitance VCE = 2 V, f = 1 MHz Cce - 6.3 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 10.5 - Noise figure IC = 100 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz F - 3.3 - dB Power gain 2) IC = 200 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz G ma - 9 - dB Insertion power gain IC = 200 mA, VCE = 2 V, f = 0.5 GHz, ZS = ZL = 50W |S21|2 - 8.5 - Third order intersept point IC = 300 mA, VCE = 3 V, ZS =ZSopt , ZL=ZLopt , f = 1.8 GHz IP3 - 35 - dBm 1dB Compression point IC = 300 mA, VCE = 3 V, f = 1.8 GHz, ZS=ZSopt , ZL=ZLopt P-1dB - 26.5 - Semiconductor Group 2 1998-11-01

Semiconductor Group Sep-09-19983 Common Emitter S-Parameters f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG V CE = 2V, IC = 150mA 0.01 0.1 0.3 0.5 0.9 1.5 0.648 0.916 0.921 0.92 0.921 0.919 0.928 0.926 0.924 -159.8 -178.5 173.7 168.2 159.1 157 147.1 138.8 122.8 75.95 12.96 4.28 2.52 1.36 1.22 0.8 0.61 0.43 144.1 94.9 83.7 77.3 68.1 65.7 55.6 47.1 29.1 0.0053 0.0095 0.0133 0.0188 0.0295 0.0321 0.045 0.0574 0.0811 53.8 25.5 43.6 51.9 56.1 55.7 52.7 48.1 36.6 0.7723 0.8743 0.8761 0.8777 0.8825 0.9944 0.8861 0.8878 0.884 -77.6 -167.1 -179.6 175.7 169.5 168.2 162.5 157.7 146.7 V CE = 2V, IC = 300mA 0.01 0.1 0.3 0.5 0.9 1.5 0.7274 0.9158 0.9215 0.9193 0.9224 0.9201 0.9373 0.9265 0.9204 -172.3 -179.6 173.1 167.9 158.9 156.7 147 138.6 122.7 63.82 14.24 4.735 2.788 1.515 1.358 0.891 0.672 0.47 153.8 98.6 85.3 78.7 69.8 67.5 57.7 49.4 31.7 0.003 0.007 0.0119 0.0179 0.0294 0.0324 0.0454 0.0581 0.0819 38.4 34.6 53.6 59.4 60.8 59.8 55.5 50.3 37.9 0.4321 0.8696 0.8834 0.8879 0.892 0.8952 0.8953 0.8968 0.8928 -91.1 -167 -179.5 175.8 169.5 168.1 162.2 157.5 146.5 For more and detailed S- parameters please contact your local Siemens distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 3 1998-11-01

Semiconductor Group Sep-09-19984 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data BF = 114.96 - IKF = 0.76939 A BR = 21.04 - IKR = 0.090033 A RB = 1.0754 W RE = 0.32476 VJE = 0.93266 V XTF = 0.61664 - PTF = 0 deg MJC = 0.34153 - CJS = 0F XTB = 0- FC = 0.75835 - NF = 1.1472 - ISE = 1.1591 pA NR = 1.3531 - ISC = 3.7479 A IRB = 0.17683 mA RC = 0.10737 W MJE = 0.36885 - VTF = 0.27348 V CJC = 6.12521 fF XCJC = 0.3 - VJS = 0V EG = 1.11 eV TNOM 300 K IS = 0.451 fA VAF = 24.665 V NE = 1.9962 - VAR = 16.035 V NC = 1.339 - RBM = 2.1262 W CJE = 1.227 fF TF = 3.9147 ps ITF = 3.2793 mA VJC = 0.9832 V TR = 1.115 ns MJS = 0- XTI = 0 - C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) : IS = tbd fA N = tbd - RS = tbd W All parameters are ready to use, no scalling is necessary Package Equivalent Circuit: LBI = 0.85 nH LBO = 0.3 nH LEI = 0.15 nH LEO = 0.04 nH LCI = 0.39 nH LCO = 0.2 nH C BE = 150 fF C CB = 2.2 fF C CE = 500 fF EHA07389 L BI BEC BOL C EIL L EO CBC CIL COL CEC Transistor C'-E'- B Diode E C'B' Chip Valid up to 3GHz The SOT-595 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitentechnik (IMST) Ó 1996 SIEMENS AG For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 1998-11-01

Semiconductor Group Sep-09-19985 For non-linear simulation:

  • Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
  • If you need simulation of thereverse characteristics, add the diode with the C'-E'- diode data between collector and emitter.
  • Simulation of package is not necessary for frequenties < 100MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note:
  • This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. EHA07307 C EE B Transistor Schematic Diagram The common emitter configuration shows the following advantages:
  • Higher gain because of lower emitter inductance.
  • Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. The AC characteristics are verified by random sampling. Semiconductor Group 5 1998-11-01

Semiconductor Group Sep-09-19986 Total power dissipation P tot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA,TS 100 200 300 400 500 600 700 800 900 1000 mW 1200 P tot TS TA Transition frequency fT = f (IC ) f = 200 MHz VCE = parameter in V 0 50 100 150 200 250 300 350 400 mA 500 IC GHz fT 0.5 Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 Pmax/ PDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load R thJS = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Semiconductor Group 6 1998-11-01

Semiconductor Group Sep-09-19987 Power gain G ma , G ms , |S 21|2 = f (f) VCE = 2 V, IC = 200 mA 0 1 2 3 4 5 GHz 7 f -12 dB G G ms G ma |S21|2 Power gain G ma , G ms = f (IC) VCE = 2V f = parameter in GHz 0 50 100 150 200 250 300 350 400 mA 500 IC dB G 0.5 0.8 1.8 2.5 Power gain G ma ,G ms = f (VCE ) IC=200mA f = parameter in GHz VCE dB G 0.5 0.8 1.8 2.5 Collector-base capacitance C cb = f (VCB ) VBE = 0, f = 1MHz VCB pF C cb Semiconductor Group 7 1998-11-01

Semiconductor Group Sep-09-19988 Noise figure F = f (IC ) VCE = 2 V, ZS = ZSopt 0 50 100 150 200 250 300 350 400 mA 500 IC 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 dB 6.5 F f = 0.45 GHz f = 0.9 GHz f = 1.8 GHz Semiconductor Group 8 1998-11-01