BFP460

BFP460_13 INFINEON | Alldatasheet

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Technical content

Low Noise Silicon Bipolar RF Transistor

• General purpose low noise amplifier for low voltage, low current applications
• High ESD robustness, typical 1500 V (HBM)
• Low minimum noise figure 1.1 dB at 1.8 GHz
• High linearity: output compression point OP1dB = 13 dBm @ 3 V, 35 mA, 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free package with visible leads
• Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP460 ABs 1 = E 2 = C 3 = E 4=B - - SOT343 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage TA = 25 °C TA = -55 °C VCEO 4.5 4.2 V Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 70 mA Base current IB 7 Total power dissipation1) TS ≤ 92°C Ptot 230 mW Junction temperature TJ 150 °C Ambient temperature TA -65 ... 150 Storage temperature TStg -65 ... 150 1TS is measured on the collector lead at the soldering point to the pcb

Parameter Symbol Value Unit Junction - soldering point1) RthJS 250 K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 4.5 5.8 - V Collector-emitter cutoff current VCE = 15 V, VBE = 0 VCE = 2 V, VBE = 0 VCE = 5 V, VBE = 0 , TA = 85°C Verified by random sampling ICES 1000 nA Collector-base cutoff current V CB = 2 V, IE = 0 VCB = 5 V, IE = 0 ICBO Emitter-base cutoff current V EB = 0,5 V, IC = 0 IEBO - 1 500 DC current gain VCE = 3 V, IC = 20 mA , pulse measured hFE 90 120 160 - 1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)

Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 30 mA, VCE = 3 V, f = 1 GHz fT 16 22 - GHz Collector-base capacitance VCB = 3 V, f = 1 MHz, VBE = 0 , emitter grounded Ccb - 0.32 0.45 pF Collector emitter capacitance V CE = 3 V, f = 1 MHz, VBE = 0 , base grounded Cce - 0.28 - Emitter-base capacitance V EB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Ceb - 0.55 - Minimum noise figure V CE = 2V, IC = 3 mA , ZS = ZSopt, f = 100 MHz VCE = 3V, IC = 5 mA , ZS = ZSopt, f = 1.8 GHz VCE = 3V, IC = 5 mA , ZS = ZSopt, f = 3 GHz NFmin 0.7 1.1 1.2 dB

Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Maximum power Gain1) IC = 3 mA, VCE = 1.5 V, ZS = ZSopt,ZL = ZLopt, f = 100 MHz IC = 20 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 1,8 GHz f = 3 GHz Gmax 26.5 17.5 12.5 dB Transducer gain IC = 3 mA, VCE = 1.5 V, ZS = ZL = 50Ω, f = 100 MHz IC = 20 mA, VCE = 3 V, ZS = ZL = 50Ω , f = 1.8 GHz f = 3 GHz |S21e|2 10.5 dB Third order intercept point at output2) VCE = 3 V, IC = 20 mA, f = 100 MHz VCE = 3 V, IC = 20 mA, f = 1.8 GHz IP3 23.5 27.5 dBm 1dB compression point at output VCE = 3V, IC = 20mA , ZS=ZL = 50Ω, f = 100 MHz VCE = 3V, IC = 20mA, ZS=ZL = 50Ω, f = 1.8 GHz VCE = 3V, IC = 35mA, ZS=ZL = 50Ω, f = 1.8 GHz P-1dB 9.5 11.5 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz

Total power dissipation Ptot = ƒ(TS) 0 15 30 45 60 75 90 105 120 A 1500 100 120 140 160 180 200 220 V 260 Collector-base capacitance Ccb= ƒ(VCB) f = 1MHz 0 2 4 6 8 10 V 14 VCB 0.1 0.2 0.3 0.4 0.5 pF 0.7 CCB Third order Intercept Point IP3 = ƒ(IC) (Output, ZS = ZL = 50Ω) VCE = parameter, f = 1800 MHz 0 10 20 30 40 mA 55 IC dBm IP3 Transition frequency fT = ƒ(IC) f = 1 GHz VCE = parameter 0 10 20 30 40 mA 60 IC GHz fT 3-4V

Power gain Gma, Gms, |S21|2 = ƒ (f) VCE = 3 V, IC = 20 mA 0 1 2 3 4 GHz 6 f dB G Gms Gma |S21|² Power gain Gma, Gms = ƒ (IC) VCE = 3V f = parameter in GHz 0 10 20 30 40 mA 60 IC dB G 0.9 1.8 2.4 Power gain Gma, Gms = ƒ (VCE) IC = 20 mA f = parameter in GHz VCE dB G 0.9 1.8 2.4 Noise figure F = ƒ(IC) VCE = 2 V, f = parameter ZS = ZSopt

Third order Intercept Point IP3 = ƒ(IC) (Output, ZS = ZL = 50Ω) VCE = parameter, f = 100MHz 0 10 20 30 40 50 60 mA 80 IC dBm IP3 1.5V 2.5V Noise figure F = ƒ(f) VCE = 2V, ZS = ZSopt , IC = parameter Source impedance for min. noise figure vs. frequency VCE = 2V, IC = parameter

For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models Please consult our website and download the latest versions before actually starting your design. You find the BFP460 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 6 GHz using typical devices. The BFP460 SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted.

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