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RF & Protection Devices Datasheet Revision 1.1, 2012-09-11 BFP450 High Linearity Silicon Bipolar RF Transistor

81726 Munich, Germany

© 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Datasheet 3 Revision 1.1, 2012-09-11 Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CI POS™, CIPURSE™, EconoPAC K™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAV E™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, Pr imePACK™, PrimeSTACK™, PR O-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SI EGET™, SINDRION™, SIPMOS™, SmartL EWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Te chnologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVC o, LLC (Visa Holdings In c.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corp oration. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrot echnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Allianc e, Inc. MIPS™ of MIPS Technologies, Inc., U SA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Si rius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRO NIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RI VER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 BFP450, High Linearity Silicon Bipolar RF Transistor Revision History: 2012-09-11, Revision 1.1 Page Subjects (changes since previous revision) This datasheet replaces t he revision from 2010-10-22. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the datasheet have been expanded and updated.

Datasheet 4 Revision 1.1, 2012-09-11 Table of Contents

Datasheet 6 Revision 1.1, 2012-09-11 List of Tables

Datasheet 7 Revision 1.1, 2012-09-11

1 Product Brief

The BFP450 is a high linearity wideband NPN bipolar RF transistor. The collector design supports voltages up to VCEO = 4.5 V and currents up to IC = 170 mA. With its high linearity at currents as low as 50 mA the device supports energy efficient designs. The typical transition frequen cy is approximately 24 GHz, hence the device offers high power gain at frequencies up to 3 GHz in amplifier applicat ions. The device is housed in an easy to use plastic package with visible leads.

Features

Datasheet 8 Revision 1.1, 2012-09-11

2 Features

ISM bands 434 and 868 MHz
1.9 GHz cordless phones
CATV LNA Transmitter driver amplifier
2.4 GHz WLAN and Bluetooth Output stage LNA for active antennas
TV, GPS, SDARS, 2.4 GHz WLAN, etc Suitable for 3 - 5.5 GHz oscillators Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Highly linear low noise driver amp lifier for all RF frontends up to

3 GHz

Based on Infineon´s reliable high volume 25 GHz silicon bipolar technology
Output compression point OP1dB = 19 dBm at 90 mA, 3 V, 1.9 GHz, 50 Ω system
Output 3rd order intermodulation point OIP3 = 31 dBm at 90 mA, 3 V, 1.9 GHz, 50 Ω system
Maximum available gain Gma = 15.5 dB at 50 mA, 3 V, 1.9 GHz
Minimum noise figure NFmin = 1.7 dB at 50 mA, 3 V, 1.9 GHz
Easy to use Pb-free (RoHS compliant) standard package with visible leads
Qualification report according to AEC-Q101 available Product Name Package Pin Configuration Marking BFP450 SOT343 1 = B 2 = E 3 = C 4 = E ANs

Datasheet 9 Revision 1.1, 2012-09-11

3 Maximum Ratings

Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Table 3-1 Maximum Ratings Parameter Symbol Values Unit Note / Test Condition Min. Max. Collector emitter voltage VCEO Open base –4 . 5 V TA = 25 °C –4 . 1 V TA = -55 °C Collector emitter voltage VCES – 15 V E-B short circuited Collector base voltage VCBO – 15 V Open emitter Emitter base voltage VEBO – 1.5 V Open collector Collector current IC –1 7 0 m A – Base current IB –1 0 m A – Total power dissipation1) 1) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb. Ptot –5 0 0 m W TS ≤ 90 °C Junction temperature TJ –1 5 0 ° C – Storage temperature TStg -55 150 °C –

Datasheet 10 Revision 1.1, 2012-09-11

4 Thermal Characteristics

Figure 4-1 Total Power Dissipation Ptot = f (Ts) Table 4-1 Thermal Resistance Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Junction - soldering point1) 1)For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) RthJS –1 2 0 –K / W – Ts [°C] Ptot [mW] 100 200 300 400 500 600 0 50 100 150 Ts [°C] Ptot [mW] 100 200 300 400 500 600 0 50 100 150

Electrical Characteristics

Datasheet 11 Revision 1.1, 2012-09-11

5 Electrical Characteristics

5.1 DC Characteristics

5.2 General AC Characteristics

Table 5-1 DC Characteristics at TA =2 5° C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Collector emitter breakdown voltage V(BR)CEO 4.5 5 – V IC =1m A , IB =0 Open base Collector emitter leakage current ICES ––1 μA VCE =1 5V , VBE =0 –13 0 n A VCE =3V , VBE =0 E-B short circuited Collector base leakage current ICBO –13 0 n A VCB =3V , IE =0 Open emitter Emitter base leakage current IEBO –0 . 0 5 3 μA VEB =0 . 5V , IC =0 Open collector DC current gain hFE 60 95 130 VCE =4V , IC =5 0m A 50 85 120 VCE =3V , IC =9 0m A Pulse measured Table 5-2 General AC Characteristics at TA =2 5° C Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Transition frequency fT 18 24 – GHz VCE =3V , IC =9 0m A , f =1G H z Collector base capacitance CCB – 0.48 0.8 pF VCB =3V , VBE =0 V f =1M H z Emitter grounded Collector emitter capacitance CCE –1 . 2 –p F VCE =3V , VBE =0 V f =1M H z Base grounded Emitter base capacitance CEB –1 . 7 –p F VEB =0 . 5V , VCB =0 V f =1M H z Collector grounded

Datasheet 12 Revision 1.1, 2012-09-11

5.3 Frequency Dependent AC Characteristics

Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C Figure 5-1 BFP450 Testing Circuit Table 5-3 AC Characteristics, VCE = 3 V, f =1 5 0M H z Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum power gain dB High linearity operation point Gms –3 4 . 5 – IC =5 0m A Class A operation point Gms –3 5 . 5 – IC =9 0m A Transducer gain dB ZS = ZL = 50 Ω High linearity operation point S21 –3 3 – IC =5 0m A Class A operation point S21 –3 3 . 5 – IC =9 0m A Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin –1 . 5 5 – IC =5 0m A Associated gain Gass –3 2 – IC =5 0m A Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB –1 9 – IC =9 0m A 3rd order intercept point OIP3 –3 0 . 5 – IC =9 0m A IN OUT Bias -T Bias-T B (Pin 1) E C E VC Top View VB

Datasheet 13 Revision 1.1, 2012-09-11 Table 5-4 AC Characteristics, VCE = 3 V, f =4 5 0M H z Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum power gain dB High linearity operation point Gms –2 8 . 5 – IC =5 0m A Class A operation point Gms –2 9 – IC =9 0m A Transducer gain dB ZS = ZL = 50 Ω High linearity operation point S21 –2 5 – IC =5 0m A Class A operation point S21 –2 5 – IC =9 0m A Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin –1 . 5 5 – IC =5 0m A Associated gain Gass –2 7 . 5 – IC =5 0m A Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB –1 9 – IC =9 0m A 3rd order intercept point OIP3 –3 0 – IC =9 0m A Table 5-5 AC Characteristics, VCE = 3 V, f =9 0 0M H z Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum power gain dB High linearity operation point Gms –2 3 – IC =5 0m A Class A operation point Gms –2 3 . 5 – IC =9 0m A Transducer gain dB ZS = ZL = 50 Ω High linearity operation point S21 –1 8 . 5 – IC =5 0m A Class A operation point S21 –1 9 – IC =9 0m A Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin –1 . 6 – IC =5 0m A Associated gain Gass –2 3 – IC =5 0m A Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB –1 9 – IC =9 0m A 3rd order intercept point OIP3 –3 0 . 5 – IC =9 0m A

Datasheet 14 Revision 1.1, 2012-09-11 Table 5-6 AC Characteristics, VCE = 3 V, f = 1.5 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum power gain dB High linearity operation point Gma –1 8 – IC =5 0m A Class A operation point Gma –1 8 – IC =9 0m A Transducer gain dB ZS = ZL = 50 Ω High linearity operation point S21 –1 4 – IC =5 0m A Class A operation point S21 –1 4 – IC =9 0m A Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin –1 . 6 5 – IC =5 0m A Associated gain Gass –1 7 – IC =5 0m A Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB –1 9 – IC =9 0m A 3rd order intercept point OIP3 –3 1 – IC =9 0m A Table 5-7 AC Characteristics, VCE = 3 V, f = 1.9 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum power gain dB High linearity operation point Gma –1 5 . 5 – IC =5 0m A Class A operation point Gma –1 5 . 5 – IC =9 0m A Transducer gain dB ZS = ZL = 50 Ω High linearity operation point S21 9.5 11.5 – IC =5 0m A Class A operation point S21 –1 1 . 5 – IC =9 0m A Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin –1 . 7 – IC =5 0m A Associated gain Gass –1 4 – IC =5 0m A Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB –1 9 – IC =9 0m A 3rd order intercept point OIP3 –3 1 – IC =9 0m A

Datasheet 15 Revision 1.1, 2012-09-11 Notes 1. AC parameter limits verified by random sampling 2. In order to get the NF min values stated in this chapter the test fixture losses have been subtracted from all measured result 3. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. Table 5-8 AC Characteristics, VCE = 3 V, f = 2.4 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum power gain dB High linearity operation point Gma –1 3 . 5 – IC =5 0m A Class A operation point Gma –1 3 . 5 – IC =9 0m A Transducer gain dB ZS = ZL = 50 Ω High linearity operation point S21 –9 . 5 – IC =5 0m A Class A operation point S21 –9 . 5 – IC =9 0m A Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin –1 . 8 – IC =5 0m A Associated gain Gass –1 2 – IC =5 0m A Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB –1 9 – IC =9 0m A 3rd order intercept point OIP3 –3 0 – IC =9 0m A Table 5-9 AC Characteristics, VCE = 3 V, f = 3.5 GHz Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Maximum power gain dB High linearity operation point Gma –1 0 – IC =5 0m A Class A operation point Gma –1 0 – IC =9 0m A Transducer gain dB ZS = ZL = 50 Ω High linearity operation point S21 –5 . 5 – IC =5 0m A Class A operation point S21 –6– IC =9 0m A Minimum noise figure dB ZS = Zopt Minimum noise figure NFmin –2 . 0 5 – IC =5 0m A Associated gain Gass –9– IC =5 0m A Linearity dBm ZS = ZL = 50 Ω 1 dB gain compression point OP1dB –1 8 . 5 – IC =9 0m A 3rd order intercept point OIP3 –2 9 . 5 – IC =9 0m A

Datasheet 16 Revision 1.1, 2012-09-11

5.4 Characteristic DC Diagrams

Figure 5-2 Collector Current vs . Collector Emitter Voltage IC = f (VCE), IB = Parameter in mA Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V 0 1 2 3 4 5 100 120 140 160 VCE [V] IC [mA] 0.19mA 0.38mA 0.57mA 0.76mA 0.95mA 1.14mA 1.33mA 1.52mA 1.71mA 1.90mA 100 110 120 0.1 1 10 100 1000 I C [mA] hFE

Datasheet 18 Revision 1.1, 2012-09-11 Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V 1.E-09 1.E-08 1.E-07 1.E-06 1.E-05 VEB [V] IB [A]

Datasheet 19 Revision 1.1, 2012-09-11

5.5 Characteristic AC Diagrams

Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V Figure 5-8 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters 0 20 40 60 80 100 120 140 160 180 IC [mA] fT [GHz] 3.00V 2.00V 1.00V 4.00V 0 20 40 60 80 100 120 140 160 180 IC [mA] OIP3 [dBm] 3V, 0.9GHz 4V, 0.9GHz 3V, 1.9GHz 4V, 1.9GHz

Datasheet 25 Revision 1.1, 2012-09-11 Figure 5-19 Comparison Noise Figure NF50 / NFmin= f (IC), VCE = 3 V, f = 1.9 GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 0 20 40 60 80 100 0.5 1.5 2.5 3.5 4.5 Ic [mA] NF [dB] ZS = ZSopt ZS = 50Ω

Datasheet 26 Revision 1.1, 2012-09-11

6 Simulation Data

For the SPICE Gummel Poon (GP) model as well as fo r the S-parameters (including noise parameters) please refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest versions before actually starting your design. You find the BFP450 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already co ntains the package parasitics and is ready to use for DC- and high frequency simulations. Th e terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP450 SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself.

Datasheet 27 Revision 1.1, 2012-09-11

7 Package Information SOT343

Figure 7-1 Package Outline Figure 7-2 Package Footprint Figure 7-3 Marking Description (Marking BFP450: ANs) Figure 7-4 Tape Dimensions SOT343-PO V08 1.25 ±0.1 0.1 MAX.2.1±0.1 0.15 +0.1 -0.050.3+0.1 2 ±0.2 ±0.10.9 A +0.10.6 AM0.2 1.3 -0.05 -0.05 0.15 0.1 M 0.10.1 MIN. 0.6 SOT343-FP V08 0.8 1.6 1.15 0.9 XYs56 Date code (YM) 2005, June Type code Manufacturer Pin 1 SOT323-TP V02 0.24 2.15 2.3 1.1Pin 1

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Product Information

BFP450H6327 specifications and overview.

Summary

High Linearity Silicon Bipolar RF Transistor Revision 1.1, 2012-09-11

Description

High Linearity Silicon Bipolar RF Transistor Revision 1.1, 2012-09-11

Source title BFP450H6327 Datasheet(PDF) - Infineon Technologies AG

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