BFP450 SIEMENS | Alldatasheet

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Semiconductor Group Sep-09-19981 SIEGET â 25 NPN Silicon RF Transistor

  • For medium power amplifiers
  • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain G ma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz
  • Transition frequency fT = 24 GHz
  • Gold metalization for high reliability
  • SIEGET â 25 - Line Siemens G rounded Emitter Transistor

25 GHz fT - Line

ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 450 ANs Q62702-F1590 1 = B 2 = E 3 = C 4 = E SOT-343 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO V4.5 VCBO 15Collector-base voltage VEBOEmitter-base voltage 1.5 Collector current 100 mAIC IB 10Base current mW450Total power dissipation, TS £ 96 °C Ptot Junction temperature Tj 150 °C TA -65 ...+150Ambient temperature Storage temperature Tstg -65 ...+150 Thermal Resistance Junction - soldering point 1) RthJS £ 130 K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group 1 1998-11-01

Semiconductor Group Sep-09-19982 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics 5 6.54.5V(BR)CEOCollector-emitter breakdown voltage IC = 1 mA, IB = 0 V - 600-Collector-base cutoff current VCB = 5 V, IE = 0 ICBO nA - 100 µA-Emitter-base cutoff current VEB = 1.5 V, IC = 0 IEBO 80DC current gain IC = 50 mA, VCE = 4 V hFE 150 -50 AC characteristics Transition frequency IC = 90 mA, VCE = 3 V, f = 1 GHz IC = 90 mA, VCE = 3 V, f = 2 GHz fT GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Ccb - 0.48 0.75 pF Collector-emitter capacitance VCE = 2 V, f = 1 MHz Cce - 1.33 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 1.75 - Noise figure IC = 10 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz F - 1.25 1.6 dB Power gain 2) IC = 50 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz G ma - 14 - dB Insertion power gain IC = 50 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50W |S21|2 8 11 - Third order intersept point IC = 50 mA, VCE = 3 V, ZS =ZSopt , ZL=ZLopt , f = 1.8 GHz IP3 - 29 - dBm 1dB Compression point IC = 50 mA, VCE = 3 V, f = 1.8 GHz, ZS=ZSopt , ZL=ZLopt P-1dB - 19 - Semiconductor Group 2 1998-11-01

Semiconductor Group Sep-09-19983 Common Emitter S-Parameters f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG VCE = 2V, IC = 50mA 0.01 0.1 0.5 0.143 0.469 0.681 0.705 0.73 0.752 0.783 0.797 0.813 -30.7 -121.7 -172.4 173.1 154.7 139.5 124.1 112.5 103.7 69.9 51.98 14.86 7.26 3.42 2.22 1.62 1.23 1.01 174.8 125.6 90.7 74.6 38.4 22.4 8.8 -2.9 0.0018 0.0139 0.0289 0.047 0.08 0.1183 0.1461 0.1633 0.1864 85.2 59.6 51.4 55.7 51.2 30.3 20.7 12.6 0.904 0.744 0.466 0.464 0.491 0.529 0.587 0.606 0.625 -6.6 -64.2 -146.1 -172.2 163.6 145.5 131.9 119.5 108.9 Common Emitter Noise Parameters f Fmin 1) G a 1) Gopt RN rn F50W 2) |S21|2 2) GHz dB dB MAG ANG W - dB dB V CE = 2V, IC = 10mA 0.9 1.8 2.4 0.9 1.25 1.45 1.7 2.1 15.5 11.8 10.9 8.5 6.6 0.29 0.47 0.56 0.62 0.66 175 -171 -159 -147 -127 2.7 3.5 5.5 15.5 0.054 0.06 0.07 0.11 0.31 0.98 1.74 2.23 3.05 4.49 9.5 6.8 4.7 1.9 1) Input matched for minimum noise figure, output for maximum gain 2) ZS = ZL = 50W For more and detailed S- and Noise-parameters please contact your local Siemens distributor or sales office to obtain a Siemens Application Notes CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 3 1998-11-01

Semiconductor Group Sep-09-19984 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.13125 fA VAF = 24.165 V NE = 1.5563 - VAR = 13.461 V NC = 0.70543 - RBM = 5.403 W CJE = 3.2276 fF TF = 7.5068 ps ITF = 0.017655 mA VJC = 1.1487 V TR = 2.6912 ns MJS = 0- XTI = 3 - NF = 0.79652 - ISE = 28.341 pA NR = 1.2966 - ISC = 0.012292 A IRB = 0.013181 mA RC = 0.50084 W MJE = 0.48672 - VTF = 0.66148 V CJC = 1049.5 fF XCJC = 0.28285 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K BF = 76.123 - IKF = 0.58905 A BR = 21.254 - IKR = 0.25878 A RB = 2.1659 W RE = 0.45346 VJE = 0.95292 V XTF = 0.69972 - PTF = 0 deg MJC = 0.50644 - CJS = 0F XTB = 0- FC = 0.91274 - C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) : IS = 25 fA N = 1.05 - RS = 5 W All parameters are ready to use, no scalling is necessary Package Equivalent Circuit: LBI = 0.31 nH LBO = 0.63 nH LEI = 0.2 nH LEO = 0.05 nH LCI = 0.29 nH LCO = 0.68 nH C BE = 208 fF C CB = 3.2 fF C CE = 213 fF EHA07389 L BI BEC BOL C EIL L EO CBC CIL COL CEC Transistor C'-E'- B Diode E C'B' Chip Valid up to 6GHz The SOT-343 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitentechnik (IMST) Ó 1996 SIEMENS AG For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 1998-11-01

Semiconductor Group Sep-09-19985 For non-linear simulation:

  • Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
  • If you need simulation of thereverse characteristics, add the diode with the C'-E'- diode data between collector and emitter.
  • Simulation of package is not necessary for frequenties < 100MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note:
  • This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. EHA07307 C EE B Transistor Schematic Diagram The common emitter configuration shows the following advantages:
  • Higher gain because of lower emitter inductance.
  • Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead. The AC characteristics are verified by random sampling. Semiconductor Group 5 1998-11-01

Semiconductor Group Sep-09-19986 Total power dissipation P tot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA,TS 100 150 200 250 300 350 400 mW 500 P tot TS TA Transition frequency fT = f (IC ) f = 1 GHz VCE = parameter in V 0 20 40 60 80 mA 120 IC GHz fT 2 to 4 1.5 0.75 0.5 Permissible Pulse Load R thJS = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 Pmax/ PDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Semiconductor Group 6 1998-11-01

Semiconductor Group Sep-09-19987 Power gain G ma , G ms , |S 21|2 = f ( f ) VCE = 2V, IC = 50 mA f dB G G ms G ma |S21|2 Power gain G ma , G ms = f (IC) VCE = 2V f = parameter in GHz 0 20 40 60 80 mA 120 IC dB G 0.9 1.8 2.4 Collector-base capacitance C cb = f (VCB ) VBE = 0, f = 1MHz VCB 0.0 0.2 0.4 0.6 0.8 1.0 pF 1.4 C cb Power gain G ma , G ms = f (V CE ) IC = 50 mA f = Parameter in GHz VCE dB G 0.9 1.8 2.4 Semiconductor Group 7 1998-11-01

Semiconductor Group Sep-09-19988 Noise figure F = f (IC ) VCE = 2 V, f = 1.8 GHz 0 10 20 30 40 50 60 70 80 mA 100 IC 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 dB 4.5 F ZS = 50Ohm ZS = ZSopt Noise figure F = f (IC ) VCE = 2 V, ZS = ZSopt 0 10 20 30 40 50 60 70 80 mA 100 IC 0.0 0.5 1.0 1.5 2.0 dB 3.0 F f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz Noise figure F = f ( f ) VCE = 2 V, ZS = ZSopt f 0.0 0.5 1.0 1.5 2.0 dB 3.0 F IC = 50 mA IC = 10 mA Source impedance for min. Noise Figure versus Frequency VCE = 2 V, IC = 10 mA / 50 mA 100 +j10 -j10 +j25 -j25 +j50 -j50 +j100 -j100 0.9GHz 4GHz 1.8GHz 2.4GHz 3GHz 10mA 50mA Semiconductor Group 8 1998-11-01