BFP420F

BFP420F INFINEON | Alldatasheet

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/G01 For high gain low noise amplifiers /G01 Smallest Package 1.4 x 0.8 x 0.59mm /G01 Noise figure F = 1.1 dB at 1.8 GHz outstanding Gma = 20 dB at 1.8 GHz /G01 Transition frequency fT = 25 GHz /G01 Gold metallization for high reliability /G01 SIEGET /G02 25 GHz fT - Line TSFP-4 XYs /G41/G4D /G73 /G31 /G32 /G33 /G34 /G64/G69 /G72 /G65 /G63 /G74 /G69 /G6F /G6E/G20 /G6F/G66 /G20 /G75/G6E/G72 /G65/G65/G6C /G69 /G6E /G67 /G74 /G6F/G70/G20 /G76 /G69 /G65/G77 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP420F AMs 1 = B 2 = E 3 = C 4 = E TSFP-4 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 4.5 V Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 35 mA Base current IB 3 Total power dissipation TS /G01 111°C 1) Ptot 160 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point2) RthJS /G01 240 K/W 1TS is measured on the emitter lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 4.5 5 - V Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 200 nA Emitter-base cutoff current VEB = 1.5 V, IC = 0 IEBO - - 35 µA DC current gain IC = 20 mA, VC E = 4 V hFE 50 80 150 - AC characteristics (verified by random sampling) Transition frequency IC = 30 mA, VCE = 3 V, f = 2 GHz fT 18 25 - GHz Collector-base capacitance VCB = 2 V, f = 1 MHz Ccb - 0.15 0.3 pF Collector-emitter capacitance VCE = 2 V, f = 1 MHz Cce - 0.33 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 0.5 - Noise figure IC = 5 mA, VCE = 2 V, ZS = ZSopt , f = 1.8 GHz F - 1.1 - dB Power gain, maximum available 1) IC = 20 mA, VCE = 2 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz Gma - 20 - Insertion power gain IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZL = 50/G01 |S21|2 - 17 - Third order intercept point at output2) IC = 20 mA, VCE = 2 V, ZS=ZL=50/G01 , f = 1.8 GHz IP3 - 24 - dBm 1dB Compression point at output3) IC = 20 mA, VCE = 2 V, f = 1.8 GHz, ZS=ZL=50/G01 P-1dB - 10.5 - 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50/G01 from 0.1MHz to 6GHz. 3DC current no input power

SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data NF = 1.2432 - ISE = 19.049 fA NR = 1.3325 - ISC = 0.019237 fA IRB = 0.72983 mA RC = 0.10105 /G01 MJE = 0.46576 - VTF = 0.23794 V CJC = 234.53 fF XCJC = 0.3 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K BF = 72.534 - IKF = 0.48731 A BR = 7.8287 - IKR = 0.69141 A RB = 8.5757 /G01 RE = 0.31111 VJE = 0.8051 V XTF = 0.42199 - PTF = 0 deg MJC = 0.30232 - CJS = 0F XTB = 0 - FC = 0.73234 - IS = 0.20045 fA VAF = 28.383 V NE = 2.0518 - VAR = 19.705 V NC = 1.1724 - RBM = 3.4849 /G01 CJE = 1.8063 fF TF = 6.7661 ps ITF = 1m A VJC = 0.81969 V TR = 2.3249 ns MJS = 0 - XTI = 3 - C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) : IS = 3.5 fA RS = 10 /G01N = 1.02 - All parameters are ready to use, no scaling is necessary Package Equivalent Circuit: LBI = 0.42 nH RLBI = 0.15 /G01 LEI = 0.26 nH RLEI = 0.11 /G01 LCI = 0.35 nH RLCI = 0.13 /G01 KCI-EI = -0.05 - KBI-CI = -0.08 - KBI-EI = 0.20 - LBO = 0.22 nH LEO = 0.28 nH LCO = 0.22 nH KBO-EO = 0.10 - KBO-CO = 0.01 - KEO-CO = 0.11 - C BE = 34 fF CBC = 2 fF C CE = 33 fFEHA07389 L BI BEC BOL C EIL L EO CBC CIL COL CEC Transistor C’-E’- B Diode E C’B’ Chip Valid up to 6GHz The TSFP-4 package has two emitter leads. To avoid high complexity of the package equivalent circuit, both leads are combined in one electrical connection. RLxI are series resistors for the inductances LxI and Kxa-yb are the coupling coefficients between the inductances Lxa and Lyb. The referencepins for the coupled ports are B, E, C, B\, E\, C\`. For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes

For non-linear simulation: /G02 Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators. /G02 If you need simulation of the reverse characteristics, add the diode with the C'-E'- diode data between collector and emitter. /G02 Simulation of package is not necessary for frequencies < 100MHz. For higher frequencies add the wiring of package equivalent circuit around the non-linear transistor and diode model. Note: /G02 This transistor is constructed in a common emitter configuration. This feature causes an additional reverse biased diode between emitter and collector, which does not effect normal operation. EHA07307 C EE B Transistor Schematic Diagram The common emitter configuration shows the following advantages: /G02 Higher gain because of lower emitter inductance. /G02 Power is dissipated via the grounded emitter leads, because the chip is mounted on copper emitter leadframe. Please note, that the broadest lead is the emitter lead.