BFP420E6327 INFINEON | Alldatasheet

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Technical content

  • For high gain low noise amplifiers
  • For oscillators up to 10 GHz
  • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 21 dB at 1.8 GHz
  • Transition frequency fT = 25 GHz
  • Gold metallization for high reliability
  • SIEGET  25 GHz fT - Line
  • Pb-free (RoHS compliant) package1)
  • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP420 AMs 1=B 2=E 3=C 4=E - - SOT343 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage TA > 0 °C TA ≤ 0 °C VCEO 4.5 4.1 V Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 35 mA Base current IB 3 Total power dissipation2) TS ≤ 107 °C Ptot 160 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 1Pb-containing package may be available upon special request 2TS is measured on the collector lead at the soldering point to the pcb

Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 260 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage I C = 1 mA, IB = 0 V(BR)CEO 4.5 5 - V Collector-emitter cutoff current VCE = 15 V, VBE = 0 ICES - - 10 µA Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 0.5 V, IC = 0 IEBO - - 3 µA DC current gain IC = 20 mA, VCE = 4 V, pulse measured hFE 60 95 130 - 1For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 30 mA, VCE = 3 V, f = 2 GHz fT 18 25 - GHz Collector-base capacitance VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded Ccb - 0.15 0.3 pF Collector emitter capacitance VCE = 2 V, f = 1 MHz, VBE = 0 , base grounded Cce - 0.37 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Ceb - 0.55 - Noise figure IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt F - 1.1 - dB Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gms - 21 - dB Insertion power gain VCE = 2 V, IC = 20 mA, f = 1.8 GHz, ZS = ZL = 50 Ω |S21|2 14 17 - Third order intercept point at output2) VCE = 2 V, IC = 20 mA, f = 1.8 GHz, ZS = ZL = 50 Ω IP3 - 22 - dBm 1dB Compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 1.8 GHz P-1dB - 12 - 1Gms = |S21 / S12| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz

For SPICE-model as well as for S-parameters including noise parameters refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest version before actually starting your design. The simulation data have been generated and verified up to 10 GHz using typical devices. The BFP420 nonlinear SPICE-model reflects the typical DC- and RF-device performance with high accuracy.

Total power dissipation Ptot = ƒ(TS) 0 20 40 60 80 100 120 °C 150 TS 100 120 140 160 mW 200 Ptot Permissible Pulse Load RthJS = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Collector-base capacitance Ccb= ƒ(VCB) f = 1MHz 0 1 2 V 4 VCB 0.05 0.1 0.15 0.2 pF 0.3 Ccb

Transition frequency fT= ƒ(IC) f = 2 GHz VCE = parameter in V 0 5 10 15 20 25 30 mA 40 IC GHz fT 2 to 4 1.5 0.75 0.5 Power gain Gma, Gms, |S21|² = ƒ (f) VCE = 2 V, IC = 20 mA 0 1 2 3 4 5 6 f [GHz] G [dB] Gms Gma |S21|2 Power gain Gma, Gms = ƒ (IC) VCE = 2V f = parameter in GHz 0 4 8 12 16 20 24 28 32 mA 40 IC dB G 0.9 1.8 2.4 Power gain Gma, Gms = ƒ (VCE) IC = 20 mA f = parameter in GHz VCE dB G 0.9 1.8 2.4

Noise figure F = ƒ(IC) VCE = 2 V, ZS = ZSopt 0 4 8 12 16 20 24 28 32 mA 38 IC 0.5 1.5 2.5 dB F f = 6 GHz f = 5 GHz f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz Noise figure F = ƒ(IC) VCE = 2 V, f = 1.8 GHz 0 4 8 12 16 20 24 28 mA 36 IC 0.5 1.5 dB F ZS = 50 Ohm ZS = ZSopt Noise figure F = ƒ(f) VCE = 2 V, ZS = ZSopt 0 1 2 3 4 GHz 6 f 0.5 1.5 dB F IC = 20 mA IC = 5 mA Source impedance for min. noise figure vs. frequency VCE = 2 V, IC = 5 mA / 20 mA 100 +j10 -j10 +j25 -j25 +j50 -j50 +j100 -j100 3GHz 4GHz 5GHz 0.45GHz 0.9GHz 1.8GHz 2.4GHz 6GHz

Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 2005, June Date code (YM) BGA420 Type code 0.24 2.15 2.3 1.1Pin 1 0.6 0.8 1.6 1.15 0.9 1.25 ±0.1 0.1 MAX. 2.1±0.1 0.15 +0.1 -0.050.3 +0.1 2±0.2 ±0.10.9 A +0.10.6 AM0.2 1.3 -0.05 -0.05 0.15 0.1 M 0.10.1 MIN. Pin 1 Manufacturer

85579 Neubiberg, Germany

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