BFP420_13 INFINEON | Alldatasheet

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Technical content

Low Noise Silicon Bipolar RF Transistor

  • For high gain and low noise amplifiers
  • Minimum noise figure NFmin = 1.1 dB at 1.8 GHz Outstanding Gms = 21 dB at 1.8 GHz
  • For oscillators up to 10 GHz
  • Transition frequency fT = 25 GHz
  • Pb-free (RoHS compliant) and halogen-free package with visible leads
  • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP420 AMs 1=B 2=E 3=C 4=E - - SOT343 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Unit Collector-emitter voltage TA = 25 °C TA = -55 °C VCEO 4.5 4.1 V Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 60 mA Base current IB 9 Total power dissipation1) TS ≤ 98 °C Ptot 210 mW Junction temperature TJ 150 °C Storage temperature TStg -55 ... 150 1TS is measured on the emitter lead at the soldering point to the pcb Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS 250 K/W

Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 4.5 5 - V Collector-emitter cutoff current VCE = 15 V, VBE = 0 ICES - - 10 µA Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 0.5 V, IC = 0 IEBO - - 3 µA DC current gain IC = 20 mA, VCE = 4 V, pulse measured hFE 60 95 130 - 1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)

Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 30 mA, VCE = 3 V, f = 2 GHz fT 18 25 - GHz Collector-base capacitance VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded Ccb - 0.15 0.3 pF Collector emitter capacitance VCE = 2 V, f = 1 MHz, VBE = 0 , base grounded Cce - 0.37 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Ceb - 0.55 - Minimum noise figure IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt NFmin - 1.1 - dB Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gms - 21 - dB Insertion power gain VCE = 2 V, IC = 20 mA, f = 1.8 GHz, ZS = ZL = 50 Ω |S21|2 14 17 - Third order intercept point at output2) VCE = 2 V, IC = 20 mA, f = 1.8 GHz, ZS = ZL = 50 Ω IP3 - 22 - dBm 1dB compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 1.8 GHz P-1dB - 12 - 1Gms = |S21 / S12| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz

Total power dissipation Ptot = ƒ(TS) 0 30 60 90 °C 150 TS 120 150 180 mW 240 Ptot Permissible Pulse Load RthJS = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/WRthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Collector-base capacitance Ccb= ƒ(VCB) f = 1MHz 0 1 2 V 4 VCB 0.05 0.1 0.15 0.2 pF 0.3 Ccb

Transition frequency fT= ƒ(IC) f = 2 GHz VCE = parameter in V 0 5 10 15 20 25 30 mA 40 IC GHz fT 2 to 4 1.5 0.75 0.5 Power gain Gma, Gms, |S21|² = ƒ (f) VCE = 2 V, IC = 20 mA 0 1 2 3 4 5 6 f [GHz] G [dB] Gms Gma |S21|2 Power gain Gma, Gms = ƒ (IC) VCE = 2V f = parameter in GHz 0 4 8 12 16 20 24 28 32 mA 40 IC dB G 0.9 1.8 2.4 Power gain Gma, Gms = ƒ (VCE) IC = 20 mA f = parameter in GHz VCE dB G 0.9 1.8 2.4

Noise figure F = ƒ(IC) VCE = 2 V, ZS = ZSopt 0 4 8 12 16 20 24 28 32 mA 38 IC 0.5 1.5 2.5 dB F f = 6 GHz f = 5 GHz f = 4 GHz f = 3 GHz f = 2.4 GHz f = 1.8 GHz f = 0.9 GHz Noise figure F = ƒ(IC) VCE = 2 V, f = 1.8 GHz 0 4 8 12 16 20 24 28 mA 36 IC 0.5 1.5 dB F ZS = 50 Ohm ZS = ZSopt Noise figure F = ƒ(f) VCE = 2 V, ZS = ZSopt 0 1 2 3 4 GHz 6 f 0.5 1.5 dB F IC = 20 mA IC = 5 mA Source impedance for min. noise figure vs. frequency VCE = 2 V, IC = 5 mA / 20 mA 100 +j10 -j10 +j25 -j25 +j50 -j50 +j100 -j100 3GHz 4GHz 5GHz 0.45GHz 0.9GHz 1.8GHz 2.4GHz 6GHz

For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please refer to our internet website www.infineon.com/rf.models Please consult our website and download the latest versions before actually starting your design. You find the BFP420 SPICE GP model in the internet in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the pin configuration of the device. The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP420 SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted.

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