BFP360W INFINEON | Alldatasheet

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/G01 Low voltage/ low current operation /G01 For low noise amplifiers /G01 For Oscillators up to 3.5 GHz and Pout > 10 dBm /G01 Low noise figure: 1.0 dB at 1.8 GHz VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP360W FBs 1 = E 2 = C 3 = E 4 = B - - SOT343 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 6 V Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 2 Collector current IC 35 mA Base current IB 4 Total power dissipation1) TS /G01 95°C Ptot 210 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS /G01/G02 260 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 6 9 - V Collector-emitter cutoff current VCE = 15 V, VBE = 0 ICES - - 10 µA Collector-base cutoff current VCB = 5 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 15 mA, VCE = 3 V hFE 60 130 200 -

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 3 V, f = 1 GHz fT 11 14 - GHz Collector-base capacitance VCB = 5 V, f = 1 MHz, emitter grounded Ccb - 0.3 0.5 pF Collector emitter capacitance VCE = 5 V, f = 1 MHz, base grounded Cce - 0.28 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, collector grounded Ceb - 0.47 - Noise figure IC = 3 mA, VCE = 3 V, ZS = ZSopt, f = 1.8 GHz Fmin - 1 - dB Power gain, maximum stable 1) IC = 15 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 1.8 GHz Gms - 17.5 - dB Power gain, maximum available1) IC = 15 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 3 GHz Gma - 12 - dB Transducer gain IC = 15 mA, VCE = 3 V, ZS = ZL = 50/G03 , f = 1.8 GHz IC = 15 mA, VCE = 3 V, ZS = ZL = 50/G03 , f = 3 GHz |S21e|2 9.5 dB Third order intercept point at output2) VCE = 3 V, IC = 15 mA, f = 1.8 GHz, ZS = ZL = 50/G03 IP3 - 24 - dBm 1dB Compression point at output IC = 15 mA, VCE = 3 V, ZS = ZL = 50/G03 , f = 1.8 GHz P-1dB - 9 - 1Gms = |S21e/S12e|, Gma = |S21e / S12e| (k-(k²-1)1/2) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50/G01 from 0.1 MHz to 6 GHz

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = 0.0689 fA VAF = 20 V NE = 2.4 - VAR = 60 V NC = 1.4 - RBM = 7.31 /G01 CJE = 400 fF TF = 9.219 ps ITF = 1.336 mA VJC = 0.864 V TR = 1.92 ns MJS = 0 - XTI = 0 - AF = 1 - BF = 147 - IKF = 77.28 mA BR = 6 - IKR = 0.3 A RB = 0.1 /G01 RE = 78.2 m /G01 VJE = 1.3 V XTF = 0.115 - PTF = 0 deg MJC = 0.486 - CJS = 0 fF XTB = 0 - FC = 0.954 KF = 1E-14 - NF = 1- ISE = 150 fA NR = 1 - ISC = 20 fA IRB = 74 µA RC = 0.35 /G01 MJE = 0.5 - VTF = 0.198 V CJC = 473 fF XCJC = 0.129 - VJS = 0.75 V EG = 1.11 eV NK = 0.5 K All parameters are ready to use, no scalling is necessary. Package Equivalent Circuit: LBI = 0.43 nH LBO = 0.47 nH LEI = 0.26 nH LEO = 0.12 nH LCI = 0.06 nH LCO = 0.36 nH CBE = 68 fF CCB = 46 fF CCE = 232 fF For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes Valid up to 6GHz