BFP22 SIEMENS | Alldatasheet

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Technical content

NPN Silicon Transistors BFP 22 with High Reverse Voltage BFP 25 Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BFP 22 BFP 25 Q62702-F621 Q62702-F721 – TO-92 1 2 3 E B C 1) For detailed information see chapter Package Outlines. 2) Mounted on Al heat sink 15 mm· 25 mm · 0.5 mm. Parameter Symbol BFP 22 Unit Collector-emitter voltage VCE0 200 V Collector-base voltage VCB0 200 Emitter-base voltage VEB0 Collector current IC mA Base current IB Total power dissipation,TC = 66 ˚C Ptot mW Junction temperature Tj ˚C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient Rth JA £ 200 K/W Peak collector current ICM Peak base current IBM BFP 25 300 300 200 100 625 150 500 200 Values Junction - case2) Rth JC £ 135 l High breakdown voltage l Low collector-emitter saturation voltage l Low capacitance l Complementary types: BFP 23, BFP 26 (PNP) 123

Electrical Characteristics

atTA = 25 ˚C, unless otherwise specified. VCollector-emitter saturation voltage1) IC = 20 mA,IB = 2 mA BFP 22 BFP 25 VCEsat 0.4 0.5 Base-emitter saturation voltage1) IC = 20 A,IB = 2 mA VBEsat – – 0.9 MHzTransition frequency IC = 20 mA,VCE = 10 V,f = 20 MHz fT –7 0 – AC characteristics VCollector-emitter breakdown voltage IC = 1 mA BFP 22 BFP 25 V(BR)CE0 200 300 UnitValuesParameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 100mA BFP 22 BFP 25 V(BR)CB0 200 300 Emitter-base breakdown voltage I E = 100mA V(BR)EB0 6–– nAEmitter-base cutoff current VEB = 4 V IEB0 – – 100 nA nA mA mA Collector-base cutoff current VCB = 160 V BFP 22 VCB = 250 V BFP 25 VCB = 160 V,TA = 150 ˚C BFP 22 VCB = 250 V,TA = 150 ˚C BFP 25 ICB0 100 100 –DC current gain IC = 1 mA,VCE = 10 V IC = 10 mA,VCE = 10 V1) IC = 30 mA,VCE = 10 V1) BFP 22 BFP 25 hFE pFOutput capacitance VCB = 30 V,f = 1 MHz C obo – 1.5 – 1) Pulse test conditions:t£ 300 ms,D £ 2% . BFP 22 BFP 25

Total power dissipationPtot= f(TA;TC ) Permissible pulse loadRthJA =f (tp) Operating rangeIC = f(VCE ) D = 0, TA = 25 ˚C Collector currentIC = f(VBE ) VCE =1 0V , TA = 25 ˚C BFP 22 BFP 25

Collector cutoff currentICB0 =f (T) VCB = 160 V, 250 V Transition frequencyfT = f(IC ) VCE = 10 V,f = 20 MHz DC current gainhFE = f(IC ) VCE =1 0V ,TA = 25 ˚C BFP 22 BFP 25