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Technical content

Features

  • For high voltage applications V CE < 12 V
  • Maximal power P tot = 700 mW
  • Transition frequency f T = 7.5 GHz
  • Noise figure NF min = 1.3 dB at 900 MHz
  • Easy to use Pb-free (RoHS compliant) and halogen-free industry standard SOT343 package with visible leads 1, 4 Application
  • GNSS active antenna
  • Amplifiers in antenna and telecommunications systems
  • CATV
  • Power amplifier for DECT and PCN systems Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Device information Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Type / Ordering code Package Pin configuration Marking Related Links BFP196WN / BFP196WNH6327XTSA1 SOT343 1=E 2=C 3=B 4=E RLs see SOT343 Package Preliminary datasheet Please read the Important Notice and Warnings at the end of this document Revision 1.0 www.infineon.com 2017-01-20

Low noise silicon bipolar RF transistor Table of contents Preliminary datasheet 2 Revision 1.0 2017-01-20

1 Absolute maximum ratings

Table 1 Absolute maximum ratings at T A = 25 °C (unless otherwise specified) Parameter Symbol Values Unit Note or Test condition Min. Max. Collector emitter voltage VCEO – 12 V Base open Collector emitter voltage VCES – 20 V Emitter / base short circuited Collector base voltage VCBO – 20 V Emitter open Emitter base voltage VEBO – 2 V Collector open DC collector current IC – 150 mA – DC base current IB – 15 mA – Total power Ptot – 700 mW – Junction temperature TJ – 150 °C – Storage temperature TStg -55 150 °C – Attention: Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings. Exceeding only one of these values may cause irreversible damage to the component. BFP196WN Low noise silicon bipolar RF transistor Absolute maximum ratings Preliminary datasheet 3 Revision 1.0 2017-01-20

2 Thermal characteristics

Table 2 Thermal resistance Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. Junction - soldering point RthJS – 115 – K/W 1) Figure 1 Absolute maximum power dissipation P tot vs. Ts Note: In the horizontal part of the above curve the junction temperature TJ is lower than TJ,max. In the declining slope it is TJ = TJ,max. Ptot has to be reduced according to the curve in order not to exceed TJ,max. It is TJ,max = TS + Ptot * RTHJS.

1 For the definition of RthJS please refer to the application note AN077

Low noise silicon bipolar RF transistor Thermal characteristics Preliminary datasheet 4 Revision 1.0 2017-01-20

3 Electrical performance in test fixture

3.1 DC parameter table

Table 3 DC characteristics at T A = 25 °C Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max. Collector emitter breakdown voltage VCEO 12 – – V IC = 1 mA, open base Collector emitter leakage current ICES – – 100 μA VCE = 20 V, VBE = 0 V Emitter / base short circuited Collector base leakage current ICBO – – 100 nA VCB = 10 V, VBE = 0 Open emitter Emitter base leakage current IEBO – – 1 μA VEB = 1 V, IC = 0 Open collector DC current gain hFE 70 100 140 VCE = 8 V, IC = 50 mA Pulse measured

3.2 AC parameter tables

Table 4 General AC characteristics at T A = 25 °C Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Transition frequency fT 5 7.5 – GHz VCE = 8 V, IC = 90 mA, f=500 MHz Collector base capacitance CCB – 0.9 – pF VCB = 10 V, VBE = 0 V, f = 1 MHz Emitter grounded Collector emitter capacitance CCE – 0.35 – pF VCE = 10 V, VBE = 0 V, f = 1 MHz Base grounded Emitter base capacitance CEB – 3.8 – pF VEB = 0.5 V, VCB = 0 V, f = 1 MHz Collector grounded BFP196WN Low noise silicon bipolar RF transistor Electrical performance in test fixture Preliminary datasheet 5 Revision 1.0 2017-01-20

Measurement setup for the AC characteristics shown in the following tables is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C. Bias-T GND RFOUT VCE 3 2Bias-TRFIN VBE Figure 2 BFP196WN testing circuit Table 5 AC characteristics, V CE = 8 V, f = 0.45 GHz Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Power gain Maximum power gain Transducer gain Gms |S21|2 23.5 19.0 dB IC = 50 mA Zs = ZSopt, ZL = ZLopt ZS=ZL=50 Ω Minimum noise figure NFmin – 0.95 – dB IC = 20 mA, ZS = ZSopt Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 dBm IC = 50 mA ZS=ZL=50 Ω Table 6 AC characteristics, V CE = 8 V, f = 0.9 GHz Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Power gain Maximum power gain Transducer gain Gms |S21|2 17.0 13.0 dB IC = 50 mA Zs = ZSopt, ZL = ZLopt ZS=ZL=50 Ω Minimum noise figure NFmin – 1.1 – dB IC = 20 mA, ZS = ZSopt Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 dBm IC = 50 mA ZS=ZL=50 Ω BFP196WN Low noise silicon bipolar RF transistor Electrical performance in test fixture Preliminary datasheet 6 Revision 1.0 2017-01-20

Table 7 AC characteristics, V CE = 8 V, f = 1.5 GHz Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Power gain Maximum power gain Transducer gain Gms |S21|2 12.5 8.5 dB IC = 50 mA Zs = ZSopt, ZL = ZLopt ZS=ZL=50 Ω Minimum noise figure NFmin – 1.7 – dB IC = 20 mA, ZS = ZSopt Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 dBm IC = 50 mA ZS=ZL=50 Ω Table 8 AC characteristics, V CE = 8 V, f =1.9 GHz Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Power gain Maximum power gain Transducer gain Gms |S21|2 6.5 dB IC = 50 mA Zs = ZSopt, ZL = ZLopt ZS=ZL=50 Ω Minimum noise figure NFmin – 2.1 – dB IC = 20 mA, ZS = ZSopt Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 dBm IC = 50 mA ZS=ZL=50 Ω Table 9 AC characteristics, V CE = 5 V, f = 2.4 GHz Parameter Symbol Values Unit Note or test condition Min. Typ. Max. Power gain Maximum power gain Transducer gain Gms |S21|2 9.7 4.8 dB IC = 50 mA Zs = ZSopt, ZL = ZLopt ZS=ZL=50 Ω Minimum noise figure NFmin – 2.5 – dB IC = 20 mA, ZS = ZSopt Linearity 1 dB compression point at output 3rd order intercept point at output OP1dB OIP3 dBm IC = 50 mA ZS=ZL=50 Ω BFP196WN Low noise silicon bipolar RF transistor Electrical performance in test fixture Preliminary datasheet 7 Revision 1.0 2017-01-20

3.3 Characteristic DC diagrams

VCE [V] 100 120 IC [mA] IB=85 µA IB=171 µA IB=256 µA IB=341 µA IB=427 µA IB=682 µA IB=597 µA IB=768 µA IB=512 µA IB=853 µA Figure 3 Collector current I C = f(VCE), IB = parameter IC [A] 100 110 120 130 140 hfe Figure 4 Current gain h FE= f(IC), VCE = 8 V BFP196WN Low noise silicon bipolar RF transistor Electrical performance in test fixture Preliminary datasheet 8 Revision 1.0 2017-01-20

0 0.5 1 1.5 2 VEB [V] 10-14 10-13 10-12 10-11 10-10 10-9 IB [A] Figure 7 Base/emitter leakage current I B = f(VEB), VCE = 8 V Note: Regard absolute maximum ratings for IC , VCE and Ptot (see Table 1) BFP196WN Low noise silicon bipolar RF transistor Electrical performance in test fixture Preliminary datasheet 10 Revision 1.0 2017-01-20

3.4 Characteristic AC diagrams

0 20 40 60 80 100 120 140 160 180 IC [mA] fT [GHz] Figure 8 Transition frequency f T = f(IC), VCE = parameter 0 1 2 3 4 5 6 7 f [GHz] 30Gain [dB] Gms Gma |S21|2 Figure 9 Gain G ms, Gma, IS21I2 = f(f), IC = 50 mA, VCE = 8 V BFP196WN Low noise silicon bipolar RF transistor Electrical performance in test fixture Preliminary datasheet 11 Revision 1.0 2017-01-20

IC [mA] 7NF50 [dB] 0.45GHz 0.9GHz 1.9GHz 1.5GHz 2.4GHz Figure 18 Noise figure NF 50 = f(IC), VCE = 8 V, f = parameter, ZS = 50 Ω Note: The curves shown in this chapter Characteristic AC diagrams have been generated using typical devices but shall not be understood as a guarantee that all devices have identical characteristic curves. TA = 25 °C. BFP196WN Low noise silicon bipolar RF transistor Electrical performance in test fixture Preliminary datasheet 16 Revision 1.0 2017-01-20

Figure 19 SOT343 package outline (dimension in mm) Figure 20 SOT343 footprint (dimension in mm) 2005, June Date code (YM) BGA420 Type codePin 1 Manufacturer Figure 21 SOT343 marking layout Figure 22 SOT343 standard packing (dimension in mm) BFP196WN Low noise silicon bipolar RF transistor Preliminary datasheet 17 Revision 1.0 2017-01-20

Revision history

Major changes since previous revision Reference Description Revision History: 2016-12-21, Revision 0.9 rev 0.9 Preliminary datasheet BFP196WN Low noise silicon bipolar RF transistor Preliminary datasheet 18 Revision 1.0 2017-01-20

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