BFP196

BFP196 SIEMENS | Alldatasheet

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Semiconductor Group 1 Dec-13-1996 BFP 196 NPN Silicon RF Transistor

• For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA
• Power amplifier for DECT and PCN systems fT = 7.5GHz F = 1.5 dB at 900MHz ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 196 RIs Q62702-F1320 1 = C 2 = E 3 = B 4 = E SOT-143 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 100 mA Base current IB 12 Total power dissipation TS ≤ 77 °C Ptot 700 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 105 K/W 1) TS is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group 2 Dec-13-1996 BFP 196 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 12 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 50 mA, VCE = 8 V hFE 50 100 200

Semiconductor Group 3 Dec-13-1996 BFP 196 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 70 mA, VCE = 8 V, f = 500 MHz fT 5 7.5 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz C cb - 0.97 1.4 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz C ce - 0.3 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C eb - 3.7 - Noise figure IC = 20 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz F 2.5 1.5 dB Power gain 2) IC = 50 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz G ma Transducer gain IC = 50 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz |S21e|2 6.5 12.5

Semiconductor Group 4 Dec-13-1996 BFP 196 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.7264 fA VAF = 20 V NE = 1.1766 - VAR = 3.8128 V NC = 0.88299 - RBM = 1 Ω CJE = 13.325 fF TF = 23.994 ps ITF = 1.9775 mA VJC = 0.73057 V TR = 2.2413 ns MJS = 0- XTI = 3- BF = 125 - IKF = 0.4294 A BR = 10.584 - IKR = 0.019511 A RB = 1.2907 Ω RE = 0.75103 Ω VJE = 0.7308 V XTF = 0.44322 - PTF = 0 deg MJC = 0.3289 - CJS = 0 fF XTB = 0 - FC = 0.50922 - NF = 0.80012 - ISE = 119.22 fA NR = 0.94288 - ISC = 4.8666 fA IRB = 0.084011 mA RC = 0.27137 Ω MJE = 0.33018 - VTF = 0.1 V CJC = 1667 fF XCJC = 0.29998 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: LBI = 0.84 nH LBO = 0.65 nH LEI = 0.31 nH LEO = 0.14 nH LCI = 0.07 nH LCO = 0.42 nH CBE = 145 fF CCB = 19 fF CCE = 281 fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm

Semiconductor Group 5 Dec-13-1996 BFP 196 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA ,TS 100 200 300 400 500 600 mW 800 Ptot TS TA Permissible Pulse Load R thJS = f (tp) s tp 0 10 1 10 2 10 3 10 K/W R thJS D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load Ptotmax/PtotDC = f (tp) s tp 0 10 1 10 2 10 - Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Semiconductor Group 6 Dec-13-1996 BFP 196 Collector-base capacitance C cb = f (VCB ) VBE = vbe = 0, f = 1MHz 0 4 8 12 16 V 22 V R 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 pF 1.8 C cb Transition frequency fT = f (IC ) VCE = Parameter 0 20 40 60 80 mA 120 IC 0.0 1.0 2.0 3.0 4.0 5.0 6.0 GHz 8.0 fT 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 0 20 40 60 80 mA 120 IC dB G 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 1.8GHz VCE = Parameter 0 20 40 60 80 mA 120 IC dB G 10V 0.7V

Semiconductor Group 7 Dec-13-1996 BFP 196 Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 2 4 6 8 V 12 \\undefined &SYMBOPL.VCE\\ dB G 0.9GHz 1.8GHz 0.9GHz 1.8GHz IC =50mA Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50Ω ) VCE = Parameter, f = 900MHz 0 20 40 60 80 100 mA 130 IC dBm IP3 Power Gain G ma , G ms = f(f) VCE = Parameter f dB G 10V 0.7V IC =50mA Power Gain |S21|2= f(f) VCE = Parameter f dB S21 10V 0.7V IC =50mA