BFP182 INFINEON | Alldatasheet

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/G01 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA /G01 fT = 8 GHz F = 1.2 dB at 900 MHz VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP182 RGs 1 = C 2 = E 3 = B 4 = E SOT143 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 35 mA Base current IB 4 Total power dissipation TS /G01 69 °C 1) Ptot 250 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point2) R thJS /G01 325 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Values UnitSymbol min. max.typ. DC characteristics VV(BR)CEOCollector-emitter breakdown voltage IC = 1 mA, IB = 0 12 -- µACollector-emitter cutoff current VCE = 20 V, VBE = 0 - 100-ICES Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 10 mA, VCE = 8 V hFE 50 100 200 -

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz fT 6 8 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 0.27 0.45 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce - 0.27 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 0.6 - Noise figure IC = 3 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz F 1.2 1.9 dB Power gain, maximum stable 1) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Gms - 21.5 - Power gain, maximum available 2) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Gma - 15 - Transducer gain IC = 10 mA, VCE = 8 V, ZS = ZL = 50/G01 , f = 900 MHz f = 1.8 GHz |S21e|2 1Gms = |S21 / S12|

SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data BF = 84.113 - IKF = 0.14414 A BR = 10.004 - IKR = 0.039478 A RB = 3.4217 /G01 RE = 2.1858 VJE = 1.0378 V XTF = 0.43147 - PTF = 0 deg MJC = 0.31068 - CJS = 0f F XTB = 0- FC = 0.64175 - IS = 4.8499 fA VAF = 21.742 V NE = 0.91624 - VAR = 2.2595 V NC = 0.5641 - RBM = 2.8263 /G01 CJE = 8.8619 fF TF = 22.72 ps ITF = 6.5523 mA VJC = 1.0132 V TR = 1.7541 ns MJS = 0- XTI = 3 - NF = 0.56639 - ISE = 8.4254 fA NR = 0.54818 - ISC = 5.9438 fA IRB = 0.071955 mA RC = 1.8159 /G01 MJE = 0.40796 - VTF = 0.34608 V CJC = 490.25 fF XCJC = 0.19281 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: LBI = 0.89 nH LBO = 0.73 nH LEI = 0.4 nH LEO = 0.15 nH LCI = 0n H LCO = 0.42 nH C BE = 189 fF C CB = 15 fF C CE = 187 fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes

Total power dissipation Ptot = f (TS ) 0 20 40 60 80 100 120 °C 150 TS 100 150 200 mW 300 P tot Permissible Pulse Load R thJS = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 Ptotmax / PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Collector-base capacitance Ccb = f (VCB ) f = 1MHz 0 4 8 12 16 V 22 VCB 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 pF 0.50 C cb Transition frequency fT = f (IC) V CE = Parameter 0 5 10 15 mA 25 IC GHz fT 0 5 10 15 mA 25 IC GHz fT 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 0 5 10 15 mA 25 IC dB G 0 5 10 15 mA 25 IC dB G 10V 0.7V Power Gain G ma , Gms = f(IC) f = 1.8GHz VCE = Parameter 0 5 10 15 mA 25 IC dB G 0 5 10 15 mA 25 IC dB G 10V 0 5 10 15 mA 25 IC dB G 0 5 10 15 mA 25 IC dB G 0.7V

Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50/G01 ) VCE = Parameter, f = 900MHz 0 5 10 15 mA 25 IC dBm IP3 0 5 10 15 mA 25 IC dBm IP3 Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 2 4 6 8 V 12 VCE dB G 0.9GHz 1.8GHz 0.9GHz 1.8GHz IC=10mA Power Gain |S21|2= f(f) V CE = Parameter f dB S21 10V 0.7V IC =10mA Power Gain G ma , G ms = f(f) VCE = Parameter f dB G 10V 0.7V IC =10mA