BFP181W

BFP181W SIEMENS | Alldatasheet

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Semiconductor Group 1 Aug-30-1996 BFP 181W NPN Silicon RF Transistor

• For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA
• fT = 8GHz F = 1.45dB at 900MHz ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 181W RFs Q62702-F1501 1 = E 2 = C 3 = E 4 = B SOT-343 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 20 mA Base current IB 2 Total power dissipation TS ≤ 91 °C Ptot 175 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 340 K/W 1) TS is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group 2 Aug-30-1996 BFP 181W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 12 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 5 mA, VCE = 8 V hFE 50 100 200

Semiconductor Group 3 Aug-30-1996 BFP 181W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 10 mA, VCE = 8 V, f = 500 MHz fT 6 8 - GHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0 , f = 1 MHz C cb - 0.24 0.4 pF Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0 , f = 1 MHz C ce - 0.27 - Emitter-base capacitance VEB = 0.5 V, VCB = vcb = 0 , f = 1 MHz C eb - 0.32 - Noise figure IC = 2 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz F 1.8 1.45 dB Power gain 1) IC = 5 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz G ms 16.5 Transducer gain IC = 5 mA, VCE = 8 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz |S21e|2 11.5 16.5 1) G ms = |S21/S12|

Semiconductor Group 4 Aug-30-1996 BFP 181W SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.0010519 fA VAF = 22.403 V NE = 1.7631 - VAR = 5.1127 V NC = 1.6528 - RBM = 6.6315 Ω CJE = 1.8168 fF TF = 17.028 ps ITF = 1.0549 mA VJC = 1.1633 V TR = 2.7449 ns MJS = 0- XTI = 3- BF = 96.461 - IKF = 0.12146 A BR = 16.504 - IKR = 0.24951 A RB = 9.9037 Ω RE = 2.1372 Ω VJE = 0.73155 V XTF = 0.33814 - PTF = 0 deg MJC = 0.30013 - CJS = 0 fF XTB = 0 - FC = 0.99768 - NF = 0.90617 - ISE = 12.603 fA NR = 0.87757 - ISC = 0.01195 fA IRB = 0.69278 mA RC = 2.2171 Ω MJE = 0.43619 - VTF = 0.12571 V CJC = 319.69 fF XCJC = 0.082903 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: LBI = 0.43 nH LBO = 0.47 nH LEI = 0.26 nH LEO = 0.12 nH LCI = 0.06 nH LCO = 0.36 nH CBE = 68 fF CCB = 46 fF CCE = 232 fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/357.htm

Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA ,TS 100 120 140 160 mW 200 Ptot TS TA Permissible Pulse Load R thJS = f (tp) s tp 1 10 2 10 3 10 K/W R thJS D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load Ptotmax/PtotDC = f (tp) s tp 0 10 1 10 2 10 - Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Semiconductor Group 6 Aug-30-1996 BFP 181W Collector-base capacitance C cb = f (VCB ) VBE = vbe = 0, f = 1MHz 0 4 8 12 16 V 24 V R 0.0 0.1 0.2 0.3 pF 0.5 C cb Transition frequency fT = f (IC ) VCE = Parameter 0 2 4 6 8 10 12 14 mA 17 IC GHz fT 10V 1V 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 0 2 4 6 8 10 12 14 mA 17 IC dB G 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 1.8GHz VCE = Parameter 0 2 4 6 8 10 12 14 mA 17 IC dB G 10V 0.7V

Semiconductor Group 7 Aug-30-1996 BFP 181W Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 2 4 6 8 V 12 V CE dB G 0.9GHz 1.8GHz 0.9GHz 1.8GHz IC=5mA Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50Ω ) VCE = Parameter, f = 900MHz 1 3 5 7 9 11 13 mA 17 IC dBm IP3 Power Gain G ma , G ms = f(f) VCE = Parameter f dB G 10V 0.7V IC=5mA Power Gain |S21|2= f(f) VCE = Parameter f dB S21 10V 0.7V IC=5mA