BFP180

BFP180 SIEMENS | Alldatasheet

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Semiconductor Group 1 Nov-22-1996 BFP 180 NPN Silicon RF Transistor

• For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA fT = 7GHz
• F = 2.1dB at 900MHz ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 180 RDs Q62702-F1377 1 = C 2 = E 3 = B 4 = E SOT-143 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 8 V Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 2 Collector current IC 4 mA Base current IB 0.5 Total power dissipation TS ≤ 124 °C Ptot mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 875 K/W 1) TS is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group 2 Nov-22-1996 BFP 180 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 8 - - V Collector-emitter cutoff current VCE = 10 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 8 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 1 mA, VCE = 5 V hFE 30 100 200

Semiconductor Group 3 Nov-22-1996 BFP 180 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 3 mA, VCE = 5 V, f = 500 MHz fT 5 7 - GHz Collector-base capacitance VCB = 5 V, VBE = vbe = 0 , f = 1 MHz C cb - 0.19 0.35 pF Collector-emitter capacitance VCE = 5 V, VBE = vbe = 0 , f = 1 MHz C ce - 0.27 - Emitter-base capacitance VEB = 0.5 V, VCB = vcb = 0 , f = 1 MHz C eb - 0.13 - Noise figure IC = 1 mA, VCE = 5 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz F 2.25 2.1 dB Power gain 1) IC = 1 mA, VCE = 5 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz G ms Transducer gain IC = 1 mA, VCE = 5 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz |S21e|2 8.5 1) G ms = |S21/S12|

Semiconductor Group 4 Nov-22-1996 BFP 180 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.18519 fA VAF = 26.867 V NE = 1.9818 - VAR = 3.2134 V NC = 1.6195 - RBM = 60 Ω CJE = 3.2473 fF TF = 14.866 ps ITF = 1.0202 mA VJC = 1.1812 V TR = 2.2648 ns MJS = 0- XTI = 3- BF = 94.687 - IKF = 0.025252 A BR = 20.325 - IKR = 0.012138 A RB = 1.4255 Ω RE = 3.7045 Ω VJE = 1.1812 V XTF = 0.3062 - PTF = 0 deg MJC = 0.30423 - CJS = 0 fF XTB = 0 - FC = 0.87906 - NF = 1.0236 - ISE = 130.93 fA NR = 0.93013 - ISC = 6.1852 fA IRB = 0.01 mA RC = 0.56 Ω MJE = 0.41827 - VTF = 0.22023 V CJC = 183.69 fF XCJC = 0.08334 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: LBI = 0.89 nH LBO = 0.73 nH LEI = 0.4 nH LEO = 0.15 nH LCI = 0n H LCO = 0.42 nH CBE = 189 fF CCB = 15 fF CCE = 187 fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm

Semiconductor Group 5 Nov-22-1996 BFP 180 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA ,TS mW Ptot TS TA Permissible Pulse Load R thJS = f (tp) s tp 2 10 3 10 K/W R thJS D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load Ptotmax/PtotDC = f (tp) s tp 0 10 1 10 K/W Ptotmax/P totDC D = 0 0.005 0.001 0.02 0.05 0.1 0.2 0.5

Semiconductor Group 6 Nov-22-1996 BFP 180 Collector-base capacitance C cb = f (VCB ) VBE = vbe = 0, f = 1MHz 0 2 4 6 8 V 11 V R 0.00 0.05 0.10 0.15 0.20 0.25 0.30 pF 0.40 C cb Transition frequency fT = f (IC ) VCE = Parameter IC GHz fT 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter IC dB G 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 1.8GHz VCE = Parameter IC dB G 0.7V

Semiconductor Group 7 Nov-22-1996 BFP 180 Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 2 4 6 8 V 12 V CE dB G 0.9GHz 1.8GHz 0.9GHz 1.8GHz IC=1mA Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50Ω ) VCE = Parameter, f = 900MHz IC -18 -16 -14 -12 -10 dBm IP3 Power Gain G ma , G ms = f(f) VCE = Parameter f dB G 10V 0.7V IC=1mA Power Gain |S21|2= f(f) VCE = Parameter f dB S21 10V 0.7V IC=1mA

Semiconductor Group 8 Nov-22-1996 BFP 180 Package