BFP136W SIEMENS | Alldatasheet

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Semiconductor Group 1 Jan-20-1997 BFP 136W NPN Silicon RF Transistor

  • For power amplifier in DECT and PCN systems
  • fT = 5.5GHz
  • Gold metalization for high reliability ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 136W PAs Q62702-F1575 1 = E 2 = C 3 = E 4 = B SOT-343 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 150 mA Base current IB 20 Total power dissipation TS ≤ 60 °C Ptot 1000 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 90 K/W 1) TS is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group 2 Jan-20-1997 BFP 136W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 12 - - V Collector-emitter cutoff current VCE = 20 V, VBE = 0 ICES - - 100 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 50 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 1 µA DC current gain IC = 80 mA, VCE = 5 V hFE 50 100 200

Semiconductor Group 3 Jan-20-1997 BFP 136W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 80 mA, VCE = 5 V, f = 500 MHz fT 4 5.5 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz C cb - 1.7 2.5 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz C ce - 0.7 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C eb - 6.8 - Noise figure IC = 30 mA, VCE = 5 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz F 3.3 dB Power gain 2) IC = 80 mA, VCE = 5 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz G ma 9.5 15.5 Transducer gain IC = 80 mA, VCE = 5 V, ZS =ZL= 50 Ω f = 900 MHz f = 1.8 GHz |S21e|2 Third order intersept point IC = 80 mA, VCE = 5 V, f = 1.8 MHz ZS = ZSopt, ZL = ZLopt IP3 - 33 - dBm

Semiconductor Group 4 Jan-20-1997 BFP 136W SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.5813 fA VAF = 12.331 V NE = 1.4254 - VAR = 31.901 V NC = 1.8821 - RBM = 1.0078 Ω CJE = 33.904 fF TF = 20.691 ps ITF = 4.5579 mA VJC = 1.1381 V TR = 1.0033 ns MJS = 0- XTI = 3- BF = 113.32 - IKF = 1.4907 A BR = 86.717 - IKR = 0.033605 A RB = 0 Ω RE = 0.22081 Ω VJE = 0.71518 V XTF = 0.31338 - PTF = 0 deg MJC = 0.31461 - CJS = 0 fF XTB = 0 - FC = 0.99886 - NF = 1.0653 - ISE = 46.37 fA NR = 1.8047 - ISC = 0.0080864 fA IRB = 0.83992 mA RC = 0.01636 Ω MJE = 0.36824 - VTF = 0.10174 V CJC = 2977.4 fF XCJC = 0.02899 - VJS = 0.75 V EG = 1.11 eV TNOM 300 K All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: LBI = 0.5 nH LBO = 0.51 nH LEI = 0.18 nH LEO = 0.14 nH LCI = 0.05 nH LCO = 0.35 nH CBE = 78 fF CCB = 48 fF CCE = 244 fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm

Semiconductor Group 5 Jan-20-1997 BFP 136W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA ,TS 100 200 300 400 500 600 700 800 900 1000 mW 1200 Ptot TS TA Permissible Pulse Load R thJS = f (tp) s tp 0 10 1 10 2 10 K/W R thJS D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load Ptotmax/PtotDC = f (tp) s tp 0 10 1 10 2 10 - Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Semiconductor Group 6 Jan-20-1997 BFP 136W Collector-base capacitance C cb = f (VCB ) VBE = vbe = 0, f = 1MHz 0 2 4 6 8 V 11 V R 0.0 0.5 1.0 1.5 2.0 pF 3.0 C cb Transition frequency fT = f (IC ) VCE = Parameter 0 20 40 60 80 100 120 140 mA 170 IC 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 GHz 7.0 fT 8V 5V 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 0 20 40 60 80 100 120 140 mA 170 IC dB G 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 1.8GHz VCE = Parameter 0 20 40 60 80 100 120 140 mA 170 IC dB G 10V 0.7V

Semiconductor Group 7 Jan-20-1997 BFP 136W Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 2 4 6 8 V 12 V CE dB G 0.9GHz 1.8GHz 0.9GHz IC =80mA Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50Ω ) VCE = Parameter, f = 900MHz 0 20 40 60 80 100 120 mA 160 IC dBm IP3 Power Gain G ma , G ms = f(f) VCE = Parameter f dB G 10V 0.7V IC=80mA Power Gain |S21|2= f(f) VCE = Parameter f dB G 10V 0.7V IC =80mA