BFN36 SIEMENS | Alldatasheet

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Technical content

NPN Silicon High-Voltage Transistors BFN 36 BFN 38 Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BFN 36 BFN 38 Q62702-F1246 Q62702-F1303 BFN 36 BFN 38 SOT-223 1 2 3 4 B C E C 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu. Parameter Symbol BFN 36 Unit Collector-emitter voltage VCE0 250 V Collector-base voltage VCB0 250 Emitter-base voltage VEB0 Collector current IC mA Base current IB Total power dissipation,TS = 124 ˚C Ptot W Junction temperature Tj ˚C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 72 K/W Peak collector current ICM Peak base current IBM BFN 38 300 300 200 100 1.5 150 500 200 Values Junction - soldering point Rth JS ≤ 17

  • Suitable for video output stages in TV sets and switching power supplies
  • High breakdown voltage
  • Low collector-emitter saturation voltage
  • Complementary types: BFN 37, BFN 39 (PNP) 5.91

Electrical Characteristics

atTA = 25 ˚C, unless otherwise specified. Collector-emitter saturation voltage1) IC = 20 mA,IB = 2 mA BFN 36 BFN 38 DC current gain1) IC = 1 mA,VCE = 10 V IC = 10 mA,VCE = 10 V IC = 30 mA,VCE = 10 V BFN 36 IC = 30 mA,VCE = 10 V BFN 38 VVCEsat 0.4 0.5 Base-emitter saturation voltage1) IC = 20 mA,IB = 2 mA VBEsat – – 0.9 MHzTransition frequency IC = 20 mA,VCE = 10 V,f = 100 MHz fT –7 0 – AC characteristics VCollector-emitter breakdown voltage IC = 1 mA,IB = 0 BFN 36 BFN 38 V(BR)CE0 250 300 UnitValuesParameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 100µA,IB = 0 BFN 36 BFN 38 V(BR)CB0 250 300 Emitter-base breakdown voltage IE = 100µA,IB = 0 V(BR)EB0 5–– nAEmitter-base cutoff current VEB = 4 V,IC = 0 IEB0 – – 100 nA nA µA µA Collector-base cutoff current VCB = 200 V BFN 36 VCB = 250 V BFN 38 VCB = 200 V,TA = 150 ˚C BFN 36 VCB = 250 V,TA = 150 ˚C BFN 38 ICB0 100 100 –hFE pFOutput capacitance VCB = 30 V,f = 1 MHz C obo – 1.5 – 1) Pulse test conditions:t≤ 300 µs,D = 2 %.

Total power dissipationPtot= f(TA*;TS) * Package mounted on epoxy Permissible pulse loadPtot max/Ptot DC =f (tp) Collector currentIC = f(VBE ) VCE =1 0V Collector cutoff currentICB0 = f(TA) VCB = 200 V

DC current gainhFE = f(IC ) VCE =1 0V Transition frequencyfT = f(IC ) VCE = 10 V,f = 100 MHz