BFN36 INFINEON | Alldatasheet
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BFN36, BFN38 Nov-30-20011 NPN Silicon High-Voltage Transistors /G01 Suitabled for video output stages in TV sets and switching power supplies /G01 High breakdown voltage /G01 Low collector-emitter saturation voltage /G01 Complementary types: BFN37, BFN39 (PNP) VPS051631 Type Marking Pin Configuration Package BFN36 BFN38 BFN 36 BFN 38 1 = B 1 = B 2 = C 2 = C 3 = E 3 = E 4 = C 4 = C SOT223 SOT223 Maximum Ratings Parameter Symbol BFN36 BFN38 Unit Collector-emitter voltage VCEO 250 300 V Collector-base voltage VCBO 250 300 Emitter-base voltage VEBO 5 5 DC collector current IC 200 mA Peak collector current ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 124 °C Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS /G01 17 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance
BFN36, BFN38 Nov-30-20012 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 BFN36 BFN38 V(BR)CEO 250 300 V Collector-base breakdown voltage IC = 100 µA, IE = 0 BFN36 BFN38 V(BR)CBO 250 300 Emitter-base breakdown voltage IE = 100 µA, IC = 0 V(BR)EBO 5 - - Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 BFN36 BFN38 ICBO 100 100 nA Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 °C VCB = 250 V, IE = 0 , TA = 150 °C BFN36 BFN38 ICBO µA Emitter cutoff current VEB = 4 V, IC = 0 IEBO - - 100 nA DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V BFN36 BFN38 hFE Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA BFN36 BFN38 VCEsat 0.4 0.5 V Base-emitter saturation voltage 1) IC = 20 mA, IB = 2 mA VBEsat - - 0.9 1) Pulse test: t < 300/G01 s; D < 2%
BFN36, BFN38 Nov-30-20013 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 20 MHz fT - 70 - MHz Collector-base capacitance VCB = 30 V, f = 1 MHz Ccb - 1.5 - pF
BFN36, BFN38 Nov-30-20014 Collector current IC = f (VBE) VCE = 10V EHP00636BFN 36/38 0 V BE 1.5 C 10-1 0.5 1.0 100 Ι V mA 102 Total power dissipation Ptot = f(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 0.2 0.4 0.6 0.8 1.2 1.4 W 1.8 Ptot Collector cutoff current ICBO = f (TA) VCB = 30V EHP00638BFN 36/38 0 ˚C A 150 CB0 10-1 50 100 102 100 Ι T nA max typ 103 Permissible pulse load Ptotmax / PtotDC = f (tp) EHP00245BFN 36/38 010 D = 101 102 310 10-5 10-4 10-3 10-2 100s 0.005 0.01 0.02 0.05 0.1 0.2 0.5 totmax totP DC P pt tp =D T tp T
BFN36, BFN38 Nov-30-20015 DC current gain hFE = f (IC) VCE = 10V EHP00639BFN 36/38 10 mA h C FE 100 10 10 10-1 0 1 2 3 Ι 102 555 Transition frequency fT = f (IC) VCE = 10V, f = 100MHz EHP00637BFN 36/38 MHz 10 10 mA f C 1010 T 555 Ι 012 3 101