BFN27_11 INFINEON | Alldatasheet

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Technical content

PNP Silicon High-Voltage Transistors

  • Suitable for video output stages in TV sets and switching power supplies
  • High breakdown voltage
  • Low collector-emitter saturation voltage
  • Complementary types: BFN26 (NPN)
  • Pb-free (RoHS compliant) package
  • Qualified according AEC Q101 Type Marking Pin Configuration Package BFN27 FLs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 300 V Collector-base voltage VCBO 300 Emitter-base voltage VEBO 5 Collector current IC 200 mA Peak collector current, tp ≤ 10 ms ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation- TS ≤ 74 °C Ptot 360 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 210 K/W 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 300 - - V Collector-base breakdown voltage IC = 100 µA, IE = 0 V(BR)CBO 300 - - Emitter-base breakdown voltage IE = 100 µA, IC = 0 V(BR)EBO 5 - - Collector-base cutoff current VCB = 250 V, IE = 0 VCB = 250 V, IE = 0 , TA = 150 °C ICBO 0.1 µA Emitter-base cutoff current VEB = 5 V, IC = 0 IEBO - - 100 nA DC current gain1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V hFE Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA VCEsat - - 0.5 V Base emitter saturation voltage1) IC = 20 mA, IB = 2 mA VBEsat - - 0.9 AC Characteristics Transition frequency IC = 20 MHz, VCE = 10 V, f = 100 MHz fT - 100 - MHz Collector-base capacitance VCB = 30 V, f = 1 MHz Ccb - 2.5 - pF 1Pulse test: t < 300µs; D < 2%

DC current gain hFE = ƒ(IC) VCE = 10 V EHP00634BFN 25/27 10 mA h C FE 100 10 10 10-1 0 1 2 3 Ι 102 555 Operating range IC = ƒ(VCEO) TA = 25°C, D = 0 10 0 10 1 10 2 10 3 V VCE -1 10 0 10 1 10 2 10 3 10 mA IC 10 µs 100 µs 1 ms DC Collector current IC = ƒ(VBE) VCE = 10V EHP00632BFN 25/27 0 V BE 1.5 C 10-1 0.5 1.0 100 Ι V mA 102 Collector cutoff current ICBO = ƒ(TA) VCBO = 200 V EHP00633BFN 25/27 0 ˚C A 150 CBO 10-1 50 100 102 100 Ι T nA max typ 103

Transition frequency fT = ƒ(IC) VCE = 10 V EHP00629BFN 25/27 MHz 10 10 mA f C 1010 T 555 Ι 01 2 3 101 Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) 0 4 8 12 16 V 22 VCB(VEB pF CCB(CEB) CCB CEB Total power dissipation Ptot = ƒ(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 100 150 200 250 300 mW 400 Ptot Permissible Pulse Load RthJS = ƒ(tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 3 10 K/WRthJS D=0.5 0.2 0.1 0.05 0.02 0.01 0.005

Ptotmax/PtotDC = ƒ(tp) EHP00630BFN 25/27 010 D = 101 102 310 10-5 10-4 10-3 10-2 100s 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p =D T t p T totmax totP DC P pt

Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel EH s BCW66 Type code Pin 1 0.8 0.9 0.91.3 0.8 1.2

0.25 M BC

1.9 -0.05 +0.10.4 ±0.12.9 0.95 C B 0...8˚ 0.2 A 0.1 MAX. 1.3 ±0.1 10˚ MAX. M 2.4 ±0.15 ±0.11 A 0.15 MIN. 1) Lead width can be 0.6 max. in dambar area 3.15 2.65 2.13 0.9 0.2 1.15Pin 1 Manufacturer 2005, June Date code (YM)

81726 Munich, Germany

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