BFN25 INFINEON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
BFN25, BFN27 Nov-30-20011 PNP Silicon High-Voltage Transistors /G01 Suitable for video output stages in TV sets and switching power supplies /G01 High breakdown voltage /G01 Low collector-emitter saturation voltage /G01 Complementary types: BFN24, BFN26 (NPN) VPS05161 Type Marking Pin Configuration Package BFN25 BFN27 FKs FLs 1 = B 1 = B 2 = E 2 = E 3 = C 3 = C SOT23 SOT23 Maximum Ratings Parameter Symbol BFN25 BFN27 Unit Collector-emitter voltage VCEO 250 300 V Collector-base voltage VCBO 250 300 Emitter-base voltage VEBO 5 5 DC collector current IC 200 mA Peak collector current ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 74 °C Ptot 360 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS /G01 210 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance
BFN25, BFN27 Nov-30-20012 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 BFN25 BFN27 V(BR)CEO 250 300 V Collector-base breakdown voltage IC = 100 µA, IE = 0 BFN25 BFN27 V(BR)CBO 250 300 Emitter-base breakdown voltage IE = 100 µA, IC = 0 V(BR)EBO 5 - - Collector cutoff current VCB = 200 V, IE = 0 VCB = 250 V, IE = 0 BFN25 BFN27 ICBO 100 100 nA Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 °C VCB = 250 V, IE = 0 , TA = 150 °C BFN25 BFN27 ICBO µA Emitter cutoff current VEB = 3 V, IC = 0 IEBO - - 100 nA DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V BFN25 BFN27 hFE Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA BFN25 BFN27 VCEsat 0.4 0.5 V Base-emitter saturation voltage 1) IC = 20 mA, IB = 2 mA VBEsat - - 0.9 1) Pulse test: t < 300/G01 s; D < 2%
BFN25, BFN27 Nov-30-20013 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 20 MHz fT - 100 - MHz Collector-base capacitance VCB = 30 V, f = 1 MHz Ccb - 2.5 - pF
BFN25, BFN27 Nov-30-20014 Transition frequency fT = f (IC) VCE = 10V EHP00629BFN 25/27 MHz 10 10 mA f C 1010 T 555 Ι 01 2 3 101 Total power dissipation Ptot = f(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 100 150 200 250 300 mW 400 Ptot Operating range IC = f (VCEO) TA = 25°C, D = 0 EHP00631BFN 25/27 10 V CEO C 10-1 10 10 100 Ι V mA 102 01 2 3 555 100 100 500DC µ µ ms ms ms s s Permissible pulse load Ptotmax / PtotDC = f (tp) EHP00630BFN 25/27 010 D = 101 102 310 10-5 10-4 10-3 10-2 100s 0.005 0.01 0.02 0.05 0.1 0.2 0.5 tp =D T tp T totmax totP DC P pt
BFN25, BFN27 Nov-30-20015 Collector current IC = f (VBE) VCE = 10 V EHP00632BFN 25/27 0 V BE 1.5 C 10-1 0.5 1.0 100 Ι V mA 102 Collector cutoff current ICBO = f (TA) VCB = 200V EHP00633BFN 25/27 0 ˚C A 150 CBO 10-1 50 100 102 100 Ι T nA max typ 103 DC current gain hFE = f (IC) VCE = 10V EHP00634BFN 25/27 10 mA h C FE 100 10 10 10-1 0 1 2 3 Ι 102 555