BFN24 SIEMENS | Alldatasheet

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Technical content

NPN Silicon High-Voltage Transistors BFN 24 BFN 26 Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BFN 24 BFN 26 Q62702-F1065 Q62702-F976 FHs FJs SOT-23B E C 1 2 3 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu. Parameter Symbol Values Unit Emitter-base voltage VEB0 Collector-base voltage VCB0 Junction temperature Tj ˚C Total power dissipation,TS = 74 ˚C Ptot mW Storage temperature range Tstg Collector-emitter voltage VCE0 V Thermal Resistance Junction - ambient2) Rth JA ≤ 280 K/W 360 150 – 65 … + 150 250 300 BFN 24 BFN 26 Collector current IC mA200 Peak collector current ICM 500 Junction - soldering point Rth JS ≤ 210 250 300 Base current IB 100 Peak base current IBM 200

  • Suitable for video output stages in TV sets and switching power supplies
  • High breakdown voltage
  • Low collector-emitter saturation voltage
  • Complementary types: BFN 25, BFN 27 (PNP) 07.94

Electrical Characteristics

atTA = 25 ˚C, unless otherwise specified. VCollector-emitter breakdown voltage IC = 1 mA BFN 24 BFN 26 V(BR)CE0 250 300 nA nA µA µA Collector-base cutoff current VCB = 200 V BFN 24 VCB = 250 V BFN 26 VCB = 200 V,TA = 150 ˚C BFN 24 VCB = 250 V,TA = 150 ˚C BFN 26 ICB0 100 100 UnitValuesParameter Symbol min. typ. max. DC characteristics Emitter-base breakdown voltage IE = 100µA V(BR)EB0 5–– VCollector-emitter saturation voltage1) IC = 20 mA,IB = 2 mA BFN 24 BFN 26 VCEsat 0.4 0.5 –DC current gain IC = 1 mA,VCE = 10 V IC = 10 mA,VCE = 10 V1) IC = 30 mA,VCE = 10 V1) BFN 24 BFN 26 hFE MHzTransition frequency IC = 20 mA,VCE = 10 V,f = 20 MHz fT –7 0 – AC characteristics pFOutput capacitance VCB = 30 V,f = 1 MHz C obo – 1.5 – Collector-base breakdown voltage IC = 100µA BFN 24 BFN 26 V(BR)CB0 250 300 nAEmitter-base cutoff current VEB = 3 V IEB0 – – 100 Base-emitter saturation voltage1) IC = 20 mA,IB = 2 mA VBEsat – – 0.9 1) Pulse test conditions:t≤ 300 µs,D = 2 %. BFN 24 BFN 26

Total power dissipationPtot= f(TA*;TS) * Package mounted on epoxy Permissible pulse loadPtot max/Ptot DC =f (tp) Transition frequencyfT = f(IC ) VCE = 10 V Operating rangeIC =f (VCE0 ) TA = 25 ˚C,D = 0 BFN 24 BFN 26

Collector currentIC =f (VBE ) VCE =1 0V DC current gainhFE = f(IC ) VCE =1 0V Collector cutoff currentICB0 = f(TA) VCB = 200 V BFN 24 BFN 26