BFN23 SIEMENS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
PNP Silicon High-Voltage Transistor BFN 23 Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BFN 23 Q62702-F1064HCs SOT-23 B E C 1 2 3 Parameter Symbol Values Unit Collector-emitter voltage VCE0 250 V Collector-base voltage VCB0 250 Collector-emitter voltage,RBE = 2.7 kΩ VCER 250 Collector current IC 50 mA Total power dissipation,TS =7 1˚ C Ptot 360 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 290 K/W Junction - soldering point Rth JS ≤ 220 Emitter-base voltage VEB0 5 Peak collector current ICM 100 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu.
- Suitable for video output stages in TV sets and switching power supplies
- High breakdown voltage
- Low collector-emitter saturation voltage
- Low capacitance
- Complementary type: BFN 22 (NPN) 5.91
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. UnitValuesParameter Symbol min. typ. max. DC characteristics VCollector-emitter breakdown voltage IC = 1 mA V(BR)CE0 250 – – Collector-base breakdown voltage IC = 10µA V(BR)CB0 250 – – Emitter-base breakdown voltage IE = 10µA V(BR)EB0 5–– nA µA Collector-base cutoff current VCB = 200 V VCB = 200 V,TA = 150 ˚C ICB0 100 µACollector cutoff current VCE = 250 V,RBE = 2.7 kΩ VCE = 250 V,TA = 150 ˚C,RBE = 2.7 kΩ ICER –DC current gain1) IC = 25 mA, VCE = 20 V hFE 50 – – VCollector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA VCEsat – – 0.5 Base-emitter saturation voltage1) IC = 10 mA, IB = 1 mA VBEsat ––1 Emitter-base cutoff current VEB = 5 V IEB0 ––1 0 Collector-emitter breakdown voltage IC = 10µA,RBE = 2.7 kΩ V(BR)CER 250 – – MHzTransition frequency IC = 10 mA, VCE = 10 V,f = 20 MHz fT – 100 – pFOutput capacitance VCB = 30 V,f = 1 MHz C obo – 0.8 – AC characteristics 1) Pulse test conditions:t≤ 300µs,D = 2 %.
Total power dissipationPtot= f(TA*;TS) * Package mounted on epoxy Permissible pulse loadPtot max/Ptot DC= f(tp) Output capacitanceC obo = f(VCE ) f = 1 MHz Transition frequencyfT = f(IC ) VCE = 10 V
Collector currentIC = f(VBE ) VCE =2 0V Collector cutoff currentICB0 = f(TA) VCB = 200 V DC current gainhFE = f(IC ) VCE =2 0V