BFN16 SIEMENS | Alldatasheet
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Technical content
NPN Silicon High-Voltage Transistors BFN 16 BFN 18 Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BFN 16 BFN 18 Q62702-F885 Q62702-F1056 DD DE SOT-89 1 2 3 B C E 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu. Parameter Symbol BFN 16 Unit Collector-emitter voltage VCE0 250 V Collector-base voltage VCB0 250 Emitter-base voltage VEB0 Collector current IC mA Base current IB Total power dissipation,TS = 130 ˚C Ptot W Junction temperature Tj ˚C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 75 K/W Peak collector current ICM Peak base current IBM BFN 18 300 300 200 100 150 500 200 Values Junction - soldering point Rth JS ≤ 20
- Suitable for video output stages in TV sets and switching power supplies
- High breakdown voltage
- Low collector-emitter saturation voltage
- Complementary types: BFN 17, BFN 19 (PNP) 5.91
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. Base-emitter saturation voltage1) IC = 20 mA,IB = 2 mA Collector-emitter saturation voltage1) IC = 20 mA,IB = 2 mA BFN 16 BFN 18 DC current gain IC = 1 mA,VCE = 10 V IC = 10 mA,VCE = 10 V1) IC = 30 mA,VCE = 10 V1) BFN 16 BFN 18 VVCEsat 0.4 0.5 VBEsat – – 0.9 MHzTransition frequency IC = 20 mA,VCE = 10 V,f = 20 MHz fT –7 0 – AC characteristics VCollector-emitter breakdown voltage IC = 1 mA BFN 16 BFN 18 V(BR)CE0 250 300 UnitValuesParameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 100µA BFN 16 BFN 18 V(BR)CB0 250 300 Emitter-base breakdown voltage IE = 100µA V(BR)EB0 5–– nAEmitter-base cutoff current VEB = 3 V IEB0 – – 100 nA nA µA µA Collector-base cutoff current VCB = 200 V BFN 16 VCB = 250 V BFN 18 VCB = 200 V,TA = 150 ˚C BFN 16 VCB = 250 V,TA = 150 ˚C BFN 18 ICB0 100 100 –hFE pFOutput capacitance VCB = 30 V,f = 1 MHz C obo – 1.5 – 1) Pulse test conditions:t≤ 300 µs,D = 2 %.
Total power dissipationPtot= f(TA*;TS) * Package mounted on epoxy Permissible pulse loadPtot max/Ptot DC =f (tp) Operating rangeIC = f(VCE0 ) TA = 25 ˚C, D = 0 Collector currentIC = f(VBE ) VCE =1 0V
Transition frequencyfT = f(IC ) VCE = 10 V DC current gainhFE = f(IC ) VCE =1 0V Collector cutoff currentICB0 = f(TA) VCB = 200 V