BFL4037 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • ON-resistance R DS(on)=0.33Ω (typ.)
  • Input capacitance Ciss=1200pF (typ.)
  • 10V drive Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) IDc*1 Limited only by maximum temperature Tch=150°C 16 A IDpack*2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 11 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 60 A Allowable Power Dissipation P D 2.0 W Tc=25°C (SANYO’s ideal heat dissipation condition)*3 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *4 E AS 159 mJ Avalanche Current *5 IAV 16 A Note : *1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V , L=1mH, IAV=16A (Fig.1) *5 L≤1mH, single pulse Package Dimensions unit : mm (typ) 7509-002 90810QB TK IM TC-00002471 SANYO Semiconductors DATA SHEET BFL4037 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network Product & Package Information

  • Package : TO-220FI(LS)
  • JEITA, JEDEC : SC-67, SOT-186A, TO-220F
  • Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine Marking Electrical Connection 16.014.0 3.6 3.5 7.2 16.1 0.7 2.55 2.55 2.4 1.2 0.9 0.75 0.6 1.2 4.5 2.8 123 10.0 3.2 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) FL4037 LOT No.

No. A1831-2/5 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=10mA, VGS=0V 500 V Zero-Gate Voltage Drain Current I DSS V DS=400V, VGS=0V 100 μA Gate-to-Source Leakage Current I GSS VGS=±24V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 35 V Forward Transfer Admittance | yfs | VDS=10V, ID=8A 4.5 9 S Static Drain-to-Source On-State Resistance RDS(on) I D=8A, VGS=10V 0.33 0.43 Ω Input Capacitance Ciss V DS=30V, f=1MHz 1200 pF Output Capacitance Coss V DS=30V, f=1MHz 250 pF Reverse Transfer Capacitance Crss V DS=30V, f=1MHz 55 pF Turn-ON Delay Time td(on) See Fig.2 26.5 ns Rise Time tr See Fig.2 78 ns Turn-OFF Delay Time td(off) See Fig.2 146 ns Fall Time tf See Fig.2 57 ns Total Gate Charge Qg V DS=200V, VGS=10V, ID=16A 48.6 nC Gate-to-Source Charge Qgs V DS=200V, VGS=10V, ID=16A 8.2 nC Gate-to-Drain “Miller” Charge Qgd V DS=200V, VGS=10V, ID=16A 27.4 nC Diode Forward Voltage VSD IS=16A, VGS=0V 0.95 1.3 V Reverse Recovery Time trr See Fig.3 IS=16A, VGS=0V, di/dt=100A/μs 600 ns Reverse Recovery Charge Qrr 5000 nC Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Time Test Circuit 50Ω10V ≥50Ω RG VDD L BFL4037 G S D PW=10μs D.C.≤0.5% P. G RGS=50Ω G S D ID=8A RL=25Ω VDD=200V VOUT BFL4037 VIN 10V VIN VDD=50V BFL4037 500μH Driver MOSFET G S D

No. A1831-3/5 Drain Current, ID -- A Switching Time, SW Time -- ns SW Time -- ID Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS IT11732 IT11733 IT11734 IT11735 IT11737IT11736 IT11738 IT11739 Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Case Temperature, Tc -- °C Drain Current, ID -- A Forward Transfer Admittance, | yfs | -- S Diode Forward V oltage, VSD -- V Source Current, IS -- A Gate-to-Source V oltage, VGS -- V ID -- VDS ID -- VGS RDS(on) -- VGS RDS(on) -- Tc IS -- VSD| yfs | -- ID 10 3052 5 15 20 15V 10V VGS=5V Tc=25°C 02 0 181641 221 0 68 1 4 VDS=20V Tc= --25°C 25°C 75°C 1.2 1.0 0.6 0.8 151359 71 1 0.4 0.2 ID=8A Tc=75°C 25°C --25°C --50 --25 0 25 50 75 100 125 150 1.0 0.4 0.8 0.6 0.2 0.9 0.3 0.7 0.5 0.1 ID=8A, V GS =10V 0.1 23 5 7 23 1.0 23 5 5 7 10 1.0 VDS=10V Tc= --25 75°C 25°C 0.01 0.1 1.0 --25 Tc=75 VGS=0V 100 1000 0.1 1.0 23 5 7 23 5 10 23 577 VDD=200V VGS=10V td(off) tr tf td(on) 100 1000 10000 5052 5 3 5 4 5 1510 30 40 20 f=1MHz Ciss Coss Crss

No. A1831-4/5 Operation in this area is limited by RDS(on). 10μs100 μs1ms 10ms IDP=60A (PW≤10μs) DC operation 100ms IDc(*1)=16A IDpack(*2)=11A IT15944IT11740 IT11742IT11730 20 40 1.0 0.5 2.0 1.5 80 100 120 2.5 140 160 Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W A S OVGS -- Qg PD -- Ta PD -- Tc 25 50 75 100 125 150 100 120 175 EAS -- Ta Avalanche Energy derating factor -- % IT10478Ambient Temperature, Ta -- °C 5040 10 20 30 VDS=200V ID=16A 0.1 1.0 100 0.01 23 5 7 20.1 1.0 35 7 2 10 35 7 2 100 35 7 Tc=25°C Single pulse 20 40 80 100 120 140 160 *1. Shows chip capability *2. SANYO's ideal heat dissipation condition

No. A1831-5/5PS This catalog provides information as of September, 2010. Specifi cations and information herein are subject to change without notice. Note on usage : Since the BFL4037 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.