BFL4007 SANYO | Alldatasheet

Document overview

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Technical content

Features

  • Reverse recovery time t rr=95ns (typ) • ON-resistance R DS(on)=0.52Ω (typ)
  • Input capacitance Ciss=1200pF (typ) • 10V drive Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 600 V Gate-to-Source Voltage V GSS ±30 V Drain Current (DC) IDc*1 Limited only by maximum temperature Tch=150°C 14 A IDpack*2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 8.7 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 49 A Source-to-Drain Diode Forward Current (DC) IS 14 A Source-to-Drain Diode Forward Current (Pulse) ISP PW≤10μs, duty cycle≤1% 49 A Allowable Power Dissipation P D 2.0 W Tc=25°C (SANYO’s ideal heat dissipation condition*)3 40 W Note : *1 Shows chip capability Continued on next page. *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. Package Dimensions unit : mm (typ) 7509-002 60210QB TK IM TC-00002337 SANYO Semiconductors DATA SHEET BFL4007 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network Product & Package Information

  • Package : TO-220FI(LS)
  • JEITA, JEDEC : SC-67, SOT-186A, TO-220F
  • Minimum Packing Quantity : 100/bag, 50/magazine Marking 16.014.0 3.6 3.5 7.2 16.1 0.7 2.55 2.55 2.4 1.2 0.9 0.75 0.6 1.2 4.5 2.8 123 10.0 3.2 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) FL4007 LOT No.

No. A1689-2/5 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *4 E AS 215 mJ Avalanche Current *5 I AV 8.5 A Note : *4 VDD=99V , L=5mH, IAV=8.5A (Fig.1) *5 L≤5mH, single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=10mA, VGS=0V 600 V Zero-Gate Voltage Drain Current I DSS V DS=480V, VGS=0V 100 μA Gate-to-Source Leakage Current I GSS VGS=±30V, VDS=0V ±100 nA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 35 V Forward Transfer Admittance | yfs | VDS=10V, ID=7A 4.3 8.5 S Static Drain-to-Source On-State Resistance RDS(on) I D=7A, VGS=10V 0.52 0.68 Ω Input Capacitance Ciss V DS=30V, f=1MHz 1200 pF Output Capacitance Coss V DS=30V, f=1MHz 220 pF Reverse Transfer Capacitance Crss V DS=30V, f=1MHz 43 pF Turn-ON Delay Time td(on) See Fig.2 27 ns Rise Time tr See Fig.2 72 ns Turn-OFF Delay Time td(off) See Fig.2 122 ns Fall Time tf See Fig.2 48 ns Total Gate Charge Qg V DS=200V, VGS=10V, ID=14A 46 nC Gate-to-Source Charge Qgs V DS=200V, VGS=10V, ID=14A 8.6 nC Gate-to-Drain “Miller” Charge Qgd V DS=200V, VGS=10V, ID=14A 26.4 nC Diode Forward Voltage VSD IS=14A, VGS=0V 1.1 1.5 V Reverse Recovery Time trr See Fig.3 IS=14A, VGS=0V, di/dt=100A/μs 95 ns Reverse Recovery Charge Qrr 250 nC Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit 50Ω ≥50Ω RG VDD L 10V BFL4007 G S D P. G RGS=50Ω G S D ID=7A RL=28.6Ω VDD=200V VOUT BFL4007 VIN PW=10μs D.C.≤0.5% 10V VIN

No. A1689-3/5 Fig.3 trr Reverse Recovery Resistance Test Circuit VDD=50V BFL4007 500μH Driver MOSFET G S D Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Case Temperature, Tc -- °C Drain Current, ID -- A Diode Forward V oltage, VSD -- V Source Current, IS -- A Gate-to-Source V oltage, VGS -- V ID -- VDS ID -- VGS RDS(on) -- TcRDS(on) -- VGS IS -- VSD| yfs | -- ID Forward Transfer Admittance, | yfs | -- S IT15477 IT15478 IT15479 IT15480 --50 --25 0 25 50 75 100 125 150 10 3052 5 2015 02 0 181641 221 0 68 1 4 15V10V 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 Tc=25°C VGS=20V VDS=20V VGS=5V IT15482 0.01 0.1 1.0 IT15481 --25 Tc=75 0.1 1.0 23 5 7 23 5 7 10 23 5 1.0 VDS=10V Tc= --25 75°C VGS=0V Tc= --25°C 25°C 75°C 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 1513971 1 ID=7A Tc=75°C 25°C --25°C VGS =10V , I D=7A 25°C

No. A1689-4/5 Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V VGS -- Qg A S O PD -- Tc Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W 25 50 75 100 125 150 100 120 175 EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W IT10478 20 40 60 80 100 120 2.5 140 160 2.0 1.5 1.0 0.5 IT15487 IT15488 20 40 60 80 100 140 120 160 IT15485 20 4010 30 VDS=200V ID=14A Drain Current, ID -- A Switching Time, SW Time -- ns SW Time -- ID Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS IT15483 100 1000 0.1 1.0 1023 5 7 2 3 235 57 VDD=200V VGS=10V td(off) tr tf td(on) 100 1000 501053 0 4 0 2015 35 45 25 IT15484 f=1MHz Ciss Coss Crss IT15486 0.01 0.1 1.0 0.1 10μs 100ms10ms 1ms DC operation 1.0 10 100 100023 5 7 23 5 7 7 23 5 23 5 7 100 Operation in this area is limited by RDS(on). IDP=49A (PW≤10μs) 100 μs Tc=25°C Single pulse IDc(*1)=14A IDpack(*2)=8.7A *1. Shows chip capability *2. SANYO's ideal heat dissipation condition

No. A1689-5/5PS This catalog provides information as of June, 2010. Specifi cations and information herein are subject to change without notice. Note on usage : Since the BFL4007 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.