BFL4001

BFL4001 SANYO | Alldatasheet

Document overview

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Technical content

Features

• Low ON-resistance.
• High-speed switching.
• Avalanche resistance guarantee.
• 10V drive. Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) IDc*1 Limited only by maximum temperature Tch=150°C 6.5 A IDpack*2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 4.1 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 13 A Allowable Power Dissipation P D 2.0 W Tc=25°C (SANYO’s ideal heat dissipation condition*)3 37 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *4 E AS 237 mJ Avalanche Current *5 IAV 6.5 A Note : *1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V , L=10mH, IAV=6.5A *5 L≤10mH, single pulse Marking : FL4001 31010QB TK IM TC-00002256 SANYO Semiconductors DATA SHEET BFL4001 N-Channel Silicon MOSFET General-Purpose Switching Device

Applications

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No. A1638-2/5 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID=10mA, VGS=0V 900 V Zero-Gate Voltage Drain Current I DSS V DS=720V, VGS=0V 1.0 mA Gate-to-Source Leakage Current I GSS VGS=±30V, VDS=0V ±100 nA Cutoff Voltage V GS(off) V DS=10V, ID=1mA 2.0 4.0 V Forward Transfer Admittance | yfs | VDS=20V, ID=3.25A 1.8 3.6 S Static Drain-to-Source On-State Resistance RDS(on) I D=3.25A, VGS=10V 2.1 2.7 Ω Input Capacitance Ciss V DS=30V, f=1MHz 850 pF Output Capacitance Coss V DS=30V, f=1MHz 130 pF Reverse Transfer Capacitance Crss V DS=30V, f=1MHz 43 pF Turn-ON Delay Time td(on) See speci fi ed Test Circuit. 19 ns Rise Time tr See speci fi ed Test Circuit. 49 ns Turn-OFF Delay Time td(off) See speci fi ed Test Circuit. 156 ns Fall Time tf See specifi ed Test Circuit. 52 ns Total Gate Charge Qg V DS=200V, VGS=10V, ID=6.5A 44 nC Gate-to-Source Charge Qgs V DS=200V, VGS=10V, ID=6.5A 7.0 nC Gate-to-Drain “Miller” Charge Qgd V DS=200V, VGS=10V, ID=6.5A 22 nC Diode Forward Voltage VSD IS=6.5A, VGS=0V 0.85 1.2 V Package Dimensions unit : mm (typ) 7509-002 Switching Time Test Circuit Avalanche Resistance Test Circuit 16.014.0 3.6 3.5 7.2 16.1 0.7 2.55 2.55 2.4 1.2 0.9 0.75 0.6 1.2 4.5 2.8 123 10.0 3.2 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) PW=10μs D.C.≤0.5% P. G RGS=50Ω G S D ID=3.25A RL=61.5Ω VDD=200V VOUT BFL4001 VGS=10V 50Ω ≥50Ω RG VDD L 10V BFL4001

No. A1638-3/5 Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Case Temperature, Tc -- °C Drain Current, ID -- A Diode Forward V oltage, VSD -- V Source Current, IS -- A Gate-to-Source V oltage, VGS -- V ID -- VDS ID -- VGS RDS(on) -- TcRDS(on) -- VGS IS -- VSD Drain Current, ID -- A Switching Time, SW Time -- ns SW Time -- ID Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS | yfs | -- ID Forward Transfer Admittance, | yfs | -- S IT15294 IT15295 IT15296 IT15297 --50 --25 0 25 50 75 100 125 150 10 4053 5 302015 25 01 0 982615 34 7 20V 10V Tc=25°C VDS=20V VGS=4V IT15299 0.01 0.1 1.0 IT15298 --25 Tc=75 0.01 0.1 23 5 7 23 5 7 1.0 10 23 5 7 1.0 0.1

5 VDS=20V

Tc= --25 75°C VGS=0V Tc= --25°C 25°C 75°C 1513971 1 1 461 0 81 2 ID=3.25A Tc=75°C 25°C --25°C VGS =10V , I D=3.25A IT15300 100 0.1 1.0 1023 5 7 2 2 33 57 VDD=200V VGS=10V td(off) tr tf td(on) 100 1000 501053 0 4 0 2015 35 45 25 IT15301 f=1MHz Ciss Coss Crss 25°C

No. A1638-4/5 Total Gate Charge, Qg -- nC Gate-to-Source V oltage, VGS -- V VGS -- Qg A S O PD -- Tc Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Case Temperature, Tc -- °C Allowable Power Dissipation, PD -- W 25 50 75 100 125 150 100 120 175 EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W IT10478 20 40 60 80 100 120 2.5 140 160 2.0 1.5 1.0 0.5 IT15304 IT15303 0.01 0.1 1.0 0.1 10μs 100ms 10ms 1ms DC operation 1.0 10 100 100023 5 7 23 5 7 7 23 5 2 2 35 7 Operation in this area is limited by RDS(on). IDP=13A (PW≤10μs) IDc(*1)=6.5A IDpack(*2)=4.1A IT15305 20 40 60 80 100 140 120 160 IT15302 20 401053 0 25 4515 35 VDS=200V ID=6.5A 100 μs *1. Shows chip capability *2. SANYO's ideal heat dissipation condition Tc=25°C Single pulse

No. A1638-5/5 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of March, 2010. Specifi cations and information herein are subject to change without notice. Note on usage : Since the BFL4001 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.