BFG520 NXP | Alldatasheet
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Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved - is replaced with: - © NXP B.V. (year). All rights reserved. - If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor Rev. 04 — 23 November 2007 Product data sheet
NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR FEA TURES
- High power gain
- Low noise figure
- High transition frequency
- Gold metallization ensures excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistors, intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fibre-optic systems. The transistors are encapsulated in 4-pin, dual-emitter plastic SOT143 and SOT143R envelopes. PINNING PIN DESCRIPTION BFG520 (Fig.1) Code: %MF 1 collector 2 base 3 emitter 4 emitter BFG520/X (Fig.1) Code: %ML 1 collector 2 emitter 3 base 4 emitter BFG520/XR (Fig.2) Code: %MP 1 collector 2 emitter 3 base 4 emitter Fig.1 SOT143B. fpage Top view MSB014 Fig.2 SOT143R. handbook, 2 columns Top view MSB035 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCEO collector-emitter voltage open base −− 15 V Ic DC collector current −− 70 mA Ptot total power dissipation up to Ts =8 8°C; note 1 −− 300 mW hFE DC current gain I C = 20 mA; VCE = 6 V; Tj=2 5°C 60 120 250 C re feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz − 0.3 − pF fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb =2 5°C − 9 − GHz G UM maximum unilateral power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb =2 5°C − 19 − dB IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb =2 5°C − 13 − dB S212 insertion power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb =2 5°C 17 18 − dB F noise figure Γs = Γopt; Ic = 5 mA; VCE =6V ; f = 900 MHz; Tamb =2 5°C − 1.1 1.6 dB Γs = Γopt; IC = 20 mA; VCE =6 V ; f = 900 MHz; Tamb =2 5°C − 1.6 2.1 dB Γs = Γopt; IC = 5 mA; VCE = 8 V; f = 2 GHz; Tamb =2 5°C − 1.9 − dB Rev. 04 - 23 November 2007 2 of 14
NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESIST ANCE Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 70 mA Ptot total power dissipation up to Ts = 88°C; note 1 − 300 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C SYMBOL PARAMETER CONDITIONS THERMAL RESIST ANCE R th j-s thermal resistance from junction to soldering point up to Ts =8 8 °C; note 1 290 K/W Rev. 04 - 23 November 2007 3 of 14
NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR CHARACTERISTICS Tj = 25°C unless otherwise specified. Notes 1. G UM is the maximum unilateral power gain, assuming S12 is zero and 2. IC = 20 mA; VCE = 6 V; RL =5 0 Ω; f = 900 MHz; Tamb =2 5 °C; fp = 900 MHz; fq = 902 MHz; measured at f(2p−q)= 898 MHz and f(2q−p) = 904 MHz. 3. dim = −60 dB (DIN 45004B); Vp =V o;Vq =V o −6 dB; Vr =V o −6 dB; fp = 795.25 MHz; fq = 803.25MHz; fr = 805.25 MHz; measured at f(p+q−r)= 793.25 MHz SYMBOL PARAMETER CONDITIONS MIN. TYP . MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 6 V −− 50 nA hFE DC current gain IC = 20 mA; VCE = 6 V 60 120 250 C e emitter capacitance IC =ic =0 ;VEB = 0.5 V; f= 1 MHz − 1 − pF C c collector capacitance IE =ie =0 ;VCB = 6 V; f = 1MHz − 0.6 − pF C re feedback capacitance IC =0 ;VCB = 6 V;f = 1MHz − 0.3 − pF fT transition frequency IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb =2 5 °C − 9 − GHz G UM maximum unilateral power gain (note 1) IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25°C − 19 − dB IC = 20 mA; VCE = 6 V; f = 2 GHz; Tamb = 25°C − 13 − dB S212 insertion power gain IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25°C 17 18 − dB F noise figure Γs = Γopt;IC = 5 mA;VCE =6V ; f = 900 MHz; Tamb =2 5 °C − 1.1 1.6 dB Γs = Γopt; IC = 20 mA; VCE =6 V; f = 900 MHz; Tamb =2 5 °C − 1.6 2.1 dB Γs = Γopt;IC = 5 mA; VCE =6 V; f = 2 GHz; Tamb =2 5 °C − 1.9 − dB PL1 output power at 1 dB gain compression IC = 20 mA; VCE = 6 V; RL =5 0 Ω ; f = 900 MHz; Tamb =2 5 °C − 17 − dBm ITO third order intercept pointnote 2 − 26 − dBm Vo output voltage note 3 − 275 − mV d2 second order intermodulation distortion IC = 20 mA; VCE = 6 V; Vo = 75 mV; Tamb =2 5 °C; f(p+q) = 810 MHz −− 50 − dB G UM 10 log S 21 1S 11 – 1S 22 – Rev. 04 - 23 November 2007 4 of 14
NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR Fig.3 Power derating curve. handbook, halfpage 0 50 100 200 400 300 100 200 150 MRA670-1 Ptot (mW) Ts (oC) Fig.4 DC current gain as a function of collector current. VCE = 6 V; Tj=2 5°C. handbook, halfpage 250 100 150 200 MRA671 10−2 10−1 11 0 1 0 2 hFE IC (mA) Fig.5 Feedback capacitance as a function of collector-base voltage. IC = 0; f = 1 MHz. handbook, halfpage 0.6 0.4 0.2 48 1 2 MRA672 C re (pF) VCB (V) Fig.6 Transition frequency as a function of collector current. f = 1 GHz; Tamb =2 5°C. handbook, halfpage12 fT (GHz) IC (mA) MRA673 10−1 11 0 1 0 2 VCE = 3 V VCE = 6 V Rev. 04 - 23 November 2007 5 of 14
NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR In Figs 7 to 10, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.7 Gain as a function of collector current. VCE = 6 V; f = 900 MHz; Tamb =2 5°C. handbook, halfpage 01 0 IC (mA)20 30 gain (dB) MRA674 MSG G UM G max Fig.8 Gain as a function of collector current. VCE = 6 V; f = 2 GHz; Tamb =2 5°C. handbook, halfpage 01 0 IC (mA) 20 30 gain (dB) MRA675 MSG G UM G max Fig.9 Gain as a function of frequency. IC = 5 mA; VCE = 6 V; Tamb =2 5°C. handbook, halfpage50 gain (dB) MRA676 102 103 104 f (MHz) MSG G UM G max Fig.10 Gain as a function of frequency. IC = 20 mA; VCE = 6 V; Tamb =2 5°C. handbook, halfpage50 gain (dB) MRA677 102 103 104 f (MHz) MSG G max G UM Rev. 04 - 23 November 2007 6 of 14
NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR Fig.11 Intermodulation distortion as a function of collector current. handbook, halfpage 05 0 −20 −70 −60 −50 −40 −30 10 20 30 dim (dB) IC (mA) MEA975 Fig.12 Second order intermodulation distortion as a function of collector current. handbook, halfpage 05 0 −20 −70 −60 −50 −40 −30 10 20 30 (dB) IC (mA) MEA974 Fig.13 Minimum noise figure and associated available gain as functions of collector current. V CE = 6 V; Tamb =2 5°C. handbook, halfpage5 2 5 G ass (dB) Fmin (dB) IC (mA) MRA682 1 10210
2000 MHz
1000 MHz
f = 900 MHz G ass Fmin
900 MHz
500 MHz
Fig.14 Minimum noise figure and associated available gain as functions of frequency. VCE = 6 V; Tamb =2 5°C. handbook, halfpage5 2 5 G ass (dB) Fmin (dB) f (MHz) MRA683 102 104103 G ass 5 mA Fmin 20 mA 20 mA IC = 5 mA Rev. 04 - 23 November 2007 7 of 14
NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR handbook, full pagewidth MRA684 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135° stability circle pot. unst. region F = 3 dB F = 2 dB F = 1.5 dB ΓOPT Fmin = 1. 1 dB Fig.15 Noise circle figure. IC = 5 mA; VCE = 6 V; f= 900 MHz; Zo =5 0 Ω . Fig.16 Noise circle figure. IC = 5 mA; VCE = 6 V; f= 2 GHz; Zo =5 0 Ω . handbook, full pagewidth MRA685 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 2 5 180° −135° −90° −45° 45° 90° 135° F = 3 dB F = 2.5 dB ΓOPT ΓMS Fmin = 1. 9 dB G = 12 dB G max = 13 dB G = 11 dB G = 10 dB F = 2 dB 0.2 0.5 1 Rev. 04 - 23 November 2007 8 of 14
NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR handbook, full pagewidth MRA678 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135°
3 GHz
40 MHz
Fig.17 Common emitter input reflection coefficient (S11). IC = 20 mA; VCE = 6 V. Zo =5 0 Ω . handbook, full pagewidth MRA679 50 40 30 20 10 180° −135° −90° −45° 45° 90° 135° Fig.18 Common emitter forward transmission coefficient (S21). IC = 20 mA; VCE = 6 V. Rev. 04 - 23 November 2007 9 of 14
NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR Fig.19 Common emitter reverse transmission coefficient (S12). IC = 20 mA; VCE = 6 V. handbook, full pagewidth MRA680 180° −90° −135° −45° 45° 90° 135° Fig.20 Common emitter output reflection coefficient (S22). IC = 20 mA; VCE = 6 V. Zo =5 0 Ω . handbook, full pagewidth MRA681 0.2 0.6 0.4 0.8 1.0 1.0 0.5 0.2 0.2 0.5 0.2 0.5 1 2 5 180° −135° −90° −45° 45° 90° 135° Rev. 04 - 23 November 2007 10 of 14
NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR PACKAGE OUTLINES UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 1.1 0.9 A 1 max 0.1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 H E ywvQ 2.5 2.1 0.45 0.15 0.55 0.45 e 1.9 1.7 Lp 0.1 0.10.2 bp 0.48 0.38 DIMENSIONS (mm are the original dimensions) SOT143B 97-02-28 0 1 2 mm scale Plastic surface mounted package; 4 leads SOT143B D H E E AB v M A X A Lp Q detail X c y w M e B bp Rev. 04 - 23 November 2007 11 of 14
NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG520; BFG520/X; BFG520/XR UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 1.1 0.9 A 1 max 0.1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 H E ywvQ 2.5 2.1 0.55 0.25 0.45 0.25 e 1.9 1.7 Lp 0.1 0.10.2 bp 0.48 0.38 DIMENSIONS (mm are the original dimensions) SOT143R 97-03-10 0 1 2 mm scale Plastic surface mounted package; reverse pinning; 4 leads SOT143R D H E E AB v M A X A Lp Q detail X c y w M e B bp Rev. 04 - 23 November 2007 12 of 14
NXP Semiconductors BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor Legal information Data sheet status [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values —Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Contact information For additional information, please visit:http://www.nxp.com For sales office addresses, send an email to:salesaddresses@nxp.com Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Rev. 04 - 23 November 2007 13 of 14
NXP Semiconductors BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 23 November 2007 Document identifier: BFG520XR_N_4 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
Revision history
Document ID Release date Data sheet status Change notice Supersedes BFG520XR_N_4 20071123 Product data sheet - BFG520XR_CNV_3 Modifications: • Pinning table on page 2; changed code BFG520XR_CNV_3 19950901 Product specification - BFG520XR_2 BFG520XR_2 - Product specification - BFG520XR_1 BFG520XR_1 - - - -