BFG235 SIEMENS | Alldatasheet

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Semiconductor Group 1 Dec-13-1996 BFG 235 NPN Silicon RF Transistor

  • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA
  • Power amplifiers for DECT and PCN systems
  • Integrated emitter ballast resistor fT = 5.5 GHz ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFG 235 BFG235 Q62702-F1432 1 = E 2 = B 3 = E 4 = C SOT-223 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-emitter voltage VCES 25 Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2 Collector current IC 300 mA Base current IB 40 Total power dissipation TS ≤ 80 °C Ptot 2000 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 35 K/W 1) TS is measured on the collector lead at the soldering point to the pcb.

Semiconductor Group 2 Dec-13-1996 BFG 235 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 15 - - V Collector-emitter cutoff current VCE = 25 V, VBE = 0 ICES - - 200 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 2 µA DC current gain IC = 200 mA, VCE = 5 V hFE 50 120 250

Semiconductor Group 3 Dec-13-1996 BFG 235 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC Characteristics Transition frequency IC = 200 mA, VCE = 8 V, f = 200 MHz fT 4 5.5 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz C cb - 2.6 3.6 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz C ce - 1.5 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz C eb - 15 - Noise figure IC = 60 mA, VCE = 8 V, f = 900 MHz ZS = ZSopt F - 2.7 - dB Power gain 2) IC = 200 mA, VCE = 8 V, f = 900 MHz ZS = ZSopt, ZL = ZLopt G ma - 12 - Transducer gain IC = 200 mA, VCE = 8 V, f = 900 MHz ZS =ZL= 50 Ω |S21e|2 - 6 - Third order intercept point IC = 200 mA, VCE = 8 V, f = 900 MHz ZS =ZL= 50 Ω IP3 - 40 - dBm

Semiconductor Group 4 Dec-13-1996 BFG 235 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA ,TS 200 400 600 800 1000 1200 1400 1600 1800 mW 2200 Ptot TS TA Permissible Pulse Load R thJS = f (tp) s tp -1 10 0 10 1 10 2 10 K/W R thJS D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load Ptotmax/PtotDC = f (tp) s tp 0 10 1 10 2 10 - Ptotmax/PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Semiconductor Group 5 Dec-13-1996 BFG 235 Collector-base capacitance C cb = f (VCB ) VBE = vbe = 0, f = 1MHz 0 4 8 12 16 V 22 V R pF C cb Transition frequency fT = f (IC ) VCE = Parameter 0 50 100 150 200 mA 300 IC 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 GHz 6.0 fT 0.7V Power Gain G ma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 0 50 100 150 200 mA 300 IC dB G 10V 0.7V Power Gain G ma , Gms = f(IC ) f = 1.8GHz VCE = Parameter 0 50 100 150 200 mA 300 IC dB G 10V 0.7V

Semiconductor Group 6 Dec-13-1996 BFG 235 Power Gain G ma , G ms = f(VCE ):_____ f = Parameter 0 2 4 6 8 V 12 V CE dB G 0.9GHz 1.8GHz 0.9GHz IC =200mA Intermodulation Intercept Point IP3=f(IC ) (3rd order, Output, ZS=ZL=50Ω ) VCE = Parameter, f = 900MHz 0 50 100 150 200 mA 300 IC dBm IP3 10V Power Gain G ma , G ms = f(f) VCE = Parameter f dB G 10V 2V 1V 0.7V IC =200mA Power Gain |S21|2= f(f) VCE = Parameter f -10 dB S21 10V 2V 1V 0.7V IC=200mA