BFG235 INFINEON | Alldatasheet

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/G01 For low-distortion broadband output amplifier stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA /G01 Power amplifiers for DECT and PCN systems /G01 Integrated emitter ballast resistor /G01 fT = 5.5 GHz VPS051631 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFG 235 BFG235 1 = E 2 = B 3 = E 4 = C SOT-223 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 V Collector-emitter voltage VCES 25 Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2 Collector current IC 300 mA Base current IB 40 Total power dissipation, TS /G01 80 °C F) Ptot 2 W Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point RthJS /G01 35 K/W 1TS is measured on the collector lead at the soldering point to the pcb

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 15 - - V Collector-emitter cutoff current VCE = 25 V, VBE = 0 ICES - - 200 µA Collector-base cutoff current VCB = 10 V, IE = 0 ICBO - - 100 nA Emitter-base cutoff current VEB = 1 V, IC = 0 IEBO - - 2 µA DC current gain IC = 200 mA, VCE = 8 V hFE 50 120 250 -

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics (verified by random sampling) Transition frequency IC = 200 mA, VCE = 8 V, f = 200 MHz fT 4 5.5 - GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 2.6 3.6 pF Collector-emitter capacitance VCE = 10 V, f = 1 MHz Cce - 1.5 - Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb - 15 - Noise figure IC = 60 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz F - 2.7 - dB Power gain, maximum available F) IC = 200 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Gma - 12 - Transducer gain IC = 200 mA, VCE = 8 V, ZS = ZL = 50/G01 , f = 900 MHz |S21e|2 - 6 - Third order intercept point IC = 200 mA, VCE = 8 V, ZS = ZL = 50/G01 , f = 900 MHz IP3 - 40 - dBm

Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA,TS 200 400 600 800 1000 1200 1400 1600 1800 mW 2200 Ptot TS TA Permissible Pulse Load RthJS = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 K/W RthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 Ptotmax / PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5

Collector-base capacitance Ccb = f (VCB) f = 1MHz 0 4 8 12 16 V 22 VCB pF Ccb Transition frequency fT = f (IC) VCE = Parameter 0 50 100 150 200 mA 300 IC 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 GHz 6.0 fT 1V 0.7V Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 0 50 100 150 200 mA 300 IC dB G 10V 0.7V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 0 50 100 150 200 mA 300 IC dB G 10V 0.7V

Power Gain Gma, Gms = f(VCE):_____ f = Parameter 0 2 4 6 8 V 12 VCE dB G 0.9GHz 1.8GHz 0.9GHz IC=200mA Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50/G01 ) VCE = Parameter, f = 900MHz 0 50 100 150 200 mA 300 IC dBm IP3 10V Power Gain Gma, Gms = f(f) VCE = Parameter f dB G IC=200mA 10V 0.7V Power Gain |S21|2= f(f) VCE = Parameter f -10 dB S21 IC=200mA 10V 0.7V